TA17441

Contextual Info: IRFF110 Data Sheet Title FF1 bt 5A, 0V, 00 m, March 1999 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFF112

Abstract: IRFF113
Contextual Info: D D . IRFF112.113 \ñ 3.0 AMPERES 100, 60 VOLTS RDS ON = 0.8 n FIELD EFFECT POWER TRANSISTOR Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRFF110

Contextual Info: IRFF110 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.

motorola mosfet for audio

Abstract: IRFF113 IRFF110
Contextual Info: M O T O R O L A SC -CXSTRS/R F> ^ 6367254 MOTOROLA SC DÊjb3h7ES4 0003503 1 98D 83283 XSTRS/R F D T -lT -o -j MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFF110 IRFF113 Advance Information S m a ll-S ig n a l Field Effe ct T ran sisto r N-Channel Enhancement-Mode

irff113

Abstract: TA17441 SS1020
Contextual Info: h a f r r is IRFF110, IRFF111, IRFF112, IRFF113 3.0A and 3.5A, 80V and 100V, 0.6 and 0.8 O hm , N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

1rff110

Abstract: IRFF110 IRFF111 IRFF113 F112 FF110 IRFF112 cs 30-08 io4
Contextual Info: -;- Standard Power M O SFETs IRFF110, IRFF111, IRFF112, IRFF113 File Number 1562 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHAN C EM EN T MODE

IRFF113

Abstract: TA17441
Contextual Info: IRFF110, IRFF111, IRFF112, IRFF113 S E M I C O N D U C T O R 3.0A and 3.5A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFF110

Abstract: JANTX2N6782 JANTXV2N6782
Contextual Info: PD - 90423C IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF110 BVDSS 100V RDS(on) .60Ω ID 3.5A  The HEXFET technology is the key to International

mosfet cross reference

Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
Contextual Info: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G

Contextual Info: PD - 90423C IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF110 BVDSS 100V RDS(on) .60Ω ID 3.5A  The HEXFET technology is the key to International

Contextual Info: International sslRectifier Government and Space hexfet power m o sfets Hermetic Package N-Channel Part BV d s s Number V IRFF024 RDS(on) (Ohms) •d @ Tq = 100°C R thJC Max. Pd @ Tc = 25°C Outline (A) (A) (K/W) (W) Number (1) 60 0.15 8.0 IRFF110 100 0.60

TA17441

Abstract: IRFF110 TB334
Contextual Info: IRFF110 Data Sheet March 1999 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET • 3.5A, 100V • rDS ON = 0.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

irf113

Abstract: IRFF110 IRFF RFF-11
Contextual Info: SILI CON I X 1ÖE D INC ilicoont. C T ’S S ilic ix_ X M • 025*4735 001470 ^ 3 ■ IRFF110/111/112/113 in c o rp o r a t e d inci N-Channel Enhancement Mode Transistors T -^ o i -0 7 TO-205AF BOTTOM VIEW PRODUCT SUMMARY to PART NUMBER V BR|DSS IRFF11Q

Contextual Info: i H s A e - R c o R - u IR FF 110, IRFF111, IRFF112, IRFF113 i s c t c 3.0A and 3.5A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

1RFF111

Abstract: a08g IRFF110 IRFF111 IRFF112 IRFF113
Contextual Info: G E SOLID STATE Dl DE D Ë | 3 ô 7 S 0 a i 001flE4ci 3 3875081 G E SOLID STATE 01E 18249 Standard Power M O S F E T s_ IRFF110, IRFF111, IRFF112, IRFF113 T~- $ i ~ ° i D File Number 1562 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode

IRFF110

Abstract: TA17441 TB334
Contextual Info: IRFF110 Data Sheet January 2002 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features • 3.5A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

F111

Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25
Contextual Info: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR

F110F

Abstract: SK 6211 TD-205A flower in the rain IRFF110R IRFF111R IRFF112R IRFF113R
Contextual Info: Rugged Power M OSFETs File N u m b e r 2022 IRFF110R, IRFF111R.IRFF112R, IRFF113R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 60V-100V rDs on = 0.60 and 0.8CÎ N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

IRFF110

Abstract: IRFF111
Contextual Info: FUT RELD EFFECT POWER TRANSISTOR IRFF110,111 3.5 AMPERES 100, 60 VOLTS RDS ON = 0.6 n Preliminary This series of N -C h annel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

Contextual Info: International ï» ! Rectifier HEXFET Power MOSFETs Hermetic Package TO-39 N-Channel Part Number V o s Drain Source Voltage Volts IRFF014 IRFF034 60 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 &DS(on) On-State Resistance (Ohms) I q Continuous Drain Current

Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRFF110 IRFF113 Advance Information S m all-S ig n al Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate TM O S N -C H A N N E L T M O S P O W E R FETs r D S o n = 0 .6 O H M 100 V O L T S . . . d e s ig n e d f o r lo w v o lt a g e , h ig h s p e e d p o w e r s w it c h in g

CH35Q

Abstract: G325 205AP G-324 International Rectifier 326 08TAIN irff110
Contextual Info: H E 0 I 4055 452 GOG^fc, 0 | Data Shfeet No. PD-9.343F I NTERNATIONAL RECTIFIER - 3 f INTERNATIONAL RECTIFIER T O R HEXFET'TRANSISTOHS IRFFTIO IRFF111 N-CHANNEL POWER MOSFETs IRFF1 1 2 TO-3 9 PACKAGE IRFF1 1 3 Features: 100 Volt, 0.6 Ohm HEXFET The HEXFET® technology is the key to International

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

CMF65-5.556K

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 March 2011. MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,