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    Rochester Electronics LLC IRFF322

    N-CHANNEL POWER MOSFET
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    DigiKey IRFF322 Bulk 500
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    Infineon Technologies AG IRFF322

    - Bulk (Alt: IRFF322)
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    Avnet Americas IRFF322 Bulk 4 Weeks 1
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    Harris Semiconductor IRFF322

    IRFF322 - 2.0A, 400V, 2.5 OHM, N-Channel POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRFF322 500 1
    • 1 $0.6563
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    • 100 $0.6169
    • 1000 $0.5579
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    IRFF322 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF322 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF322 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF322 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF322 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF322 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF322 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF322 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF322 Unknown FET Data Book Scan PDF
    IRFF322 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF322 Siliconix N-Channel Enhancement Mode Transistors TO-205AF Scan PDF
    IRFF322 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF322R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF322R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF322R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF322 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFF323

    Abstract: No abstract text available
    Text: IRFF320, IRFF321, IRFF322, IRFF323 S E M I C O N D U C T O R 2.0A and 2.5A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.0A and 2.5A, 350V to 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFF320, IRFF321, IRFF322, IRFF323 TA17404. IRFF323

    Untitled

    Abstract: No abstract text available
    Text: IRFF322 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)2.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFF322

    sgsp531

    Abstract: 2sk76 irf33 unitrode VN0340N5 MTD1N40-1 sfn02806 stm231 stm331 650P
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min Max (V) (5) 'sa C Max (F) tr Max (5) tf Max (5) Toper Max (OC) Package Style 150 150 J 150 J 150 150 150 J 150 J 150 A 150 J 150 J TO-39 TO-92


    Original     		PDF VN0640N2 TX106 IRF712 VN0340N2 MTD1N40 MTD1N40-1 RFP1N40 IRFF312 IRFF312 sgsp531 2sk76 irf33 unitrode VN0340N5 sfn02806 stm231 stm331 650P

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    Untitled

    Abstract: No abstract text available
    Text: h a IRFF320, IRFF321, IRFF322, IRFF323 r r i s ” “ ICONDUCTOE 2.0A and 2.5A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.0A and 2.5A, 350V to 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF320, IRFF321, IRFF322, IRFF323 TA17404323 RFF321, RFF322,

    irff323

    Abstract: IRFF322 8 A diode
    Text: HST FIELD EFFECT POWER TRANSISTOR IRFF322,323 2.0 AMPERES 400, 350 VOLTS RDS ON = 2.5 ft Preliminary This series of N -C h a n n e l E n h a n c e m e n t-m o d e P ow er M O SFETs utilizes G E ’s advanced Power D M O S technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF322 IRFF323 8 A diode

    SMM70N05

    Abstract: irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800
    Text: - H f M tt % ± Vd s or € $ Vg s Vd g V 1R F F 310 IRFF311 IRFF312 IRFF313 1RFF320 IRFF321 IRFF322 IRFF323 IRFF330 IRFF331 IRFF332 IRFF333 IR FF420 IRFF421 IRFF422 IRFF423 IR F M 3 0 IRFF431 IRFF432 IR FF433 IR F F 9 1 10 1R F F 9 1 11 1R F F 9 112 IR FF9113


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 2520P10 SMM60N05 T0-204AE SMM70N05 irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800

    ifr 350 mosfet

    Abstract: IRFF323 IRFF320 IRFF321 IRFF322
    Text: Standard Power MOSFETs- IRFF320, IRFF321, IRFF322, IRFF323 File Number N-Channel Enhancement-Mode Power Field-Effecl Transistors 2.0A and 2.5A, 350V - 400V rDsion = 1-80 and 2.50 N-CHANNEL ENHANCEMENT MODE o Features: • SOA is power-dissipation limited


    OCR Scan     		PDF IRFF320, IRFF321, IRFF322, IRFF323 IRFF322 IRFF323 FF320 ifr 350 mosfet IRFF320 IRFF321

    SMM70N06

    Abstract: SMM70N05 SMP2P20 SMM60N05 SILICONIX 4800 SMM11P20 IBFF333 IRFF313 SMD10P05L IRFF320
    Text: - 324 - f ft A £ Ta=25‘C Vds Vg s or * Vd g Id t M € *± € * IRFF312 IRFF313 IRFF320 IRFF321 IRFF322 IRFF323 IRFF33Q IRFF331 IRFF332 IRFF333 IRFF430 IRFF431 IRFF432 IRFF433 MOD1QOA/B/C MOD200A/B/C MQD400A/B/C MOD5QOA/B/C SMD10P05 SMD10P05L SMD15NQ5


    OCR Scan     		PDF IRFF31Z IRFF313 IRFF320 2020P10 SMM60N05 T0-204AE SMM70N05 O-204AE SMM70N06 SMM70N10 SMP2P20 SILICONIX 4800 SMM11P20 IBFF333 SMD10P05L

    Untitled

    Abstract: No abstract text available
    Text: H A R R IRFF320, IRFF321, IRFF322, IRFF323 S s e m i c o n d u c t o r 2.0A and 2.5A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.0A and 2.5A, 350V and 400V • High Input Impedance These are N-Channel enhancem ent mode silicon gate


    OCR Scan     		PDF IRFF320, IRFF321, IRFF322, IRFF323

    IRFF320R

    Abstract: IRFF323R IRFF321R IRFF322R
    Text: Rugged Power MOSFETs_ IRFF320R, IRFF321R, IRFF322R, IRFF323R File Number 2028 Avalanche Energy Rated N-Channel Power MOSFETs 2-OA a nd 2.5A, 350V -400V ros on = 1 .8 0 a nd 2 .5 0 N-CHANNEL ENHANCEMENT MODE D Feature«: • ■ ■ ■


    OCR Scan     		PDF IRFF320R, IRFF321R, IRFF322R, IRFF323R 50V-400V IRFF322R IRFF323R 92CS-426SO IRFF320R IRFF321R

    IRF09120

    Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
    Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    9358

    Abstract: 2n6797 2N6781 2N6787 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130
    Text: XOR HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D IN TERNATI ONAL RECTIFIER • 4ÔS54S2 OOIOSST □ ■ TO-39 Package T-39-Û3 N-CHANNEL Types Iq cont max 0.18 0.18 0.25 0.3 0.3 0.4 0.6 0.6 0.8 TC - 25°C A 8.0 8.0 7.0 6.0 6.0 5.0 3.5 3.5 3.0 'DM


    OCR Scan     		PDF T-39-Ã IRFF131 2N6795 IRFF133 IRFF121 2N6787 IRFF123 IRFF111 2N6781 IRFF113 9358 2n6797 2N6781 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130

    irf460 to-247

    Abstract: IRF450R IRF331R IRF460 IRF840R IRF341R irf362 IRFP450R THOMSON DISTRIBUTOR 58e d irfp462
    Text: THOnSON/ DISTRIBUTOR Power MOSFETs SflE D • T02bñ73 0G0S711 bST ■ T C S K - _ _ Rugged-Series Power MOSFETs — N-Channel continued Package ft JP Maximum Ratinas BV d s S (V) ■d s (A) 'DS(O N) OHMS eAS (mj) 350


    OCR Scan     		PDF 0G0S711 O-204 to-205 O-220 O-247 irf331r irf343r irf341r irf353r irf351r irf460 to-247 IRF450R IRF460 IRF840R irf362 IRFP450R THOMSON DISTRIBUTOR 58e d irfp462

    Untitled

    Abstract: No abstract text available
    Text: •i 43G5571 O D S m t S MTS ■ 33 HARRIS HAS IR FF320/321/322/323 IRFF320R/321R /322R /323R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO-205AF • 2.0A and 2.5A, 350V - 400V • rDS On = 1-8 fi and 2 .5 0 • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF 43G5571 FF320/321/322/323 IRFF320R/321R /322R /323R O-205AF IRFF320, IRFF321, IRFF322, IRFF323

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    IRF1401

    Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
    Text: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204


    OCR Scan     		PDF IRF1301 IRF1311 IRF1321 IRF1331 IRF1401 1RF1411 IRF1421 IRF1431 IRF1501 IRF1511 IRF4311 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221

    Untitled

    Abstract: No abstract text available
    Text: 23 H A R R IS IBFF320/321/322/323 IRFF320R/321R/322R/323R N-Channel Power M O SFETs Avalanche Energy Rated* August 1991 Package F e a tu re s T 0 -2 0 5 A F • 2.0A and 2.5A, 350V - 400V • ros on = 1-80 and 2.5fi • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFF320R/321R/322R/323R FF320, FF321, FF322, FF320R FF321R FF322R FF323R

    irf840 rf

    Abstract: THOMSON DISTRIBUTOR IRF440 TO-247 irf350* to-247 package THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF320 IRF322 irf420 IRF332
    Text: THOnSON/ DISTRIBUTOR SflE 5 • TDEb&TB 0005707 ■ TCSK - Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued P a cka g e ^pr i » [j M a x im u m R a tin g s bvdss >d s (V) (A) rD S(O N ) O HM S 400 0 .3 0 0.40 0.40 0.50 1.15 1.30 1.35 1.50


    OCR Scan     		PDF 102bfi73 to-204 to-205 T0-220 O-247 IRF322 IRF320 IRF332 IRF330 IRF342 irf840 rf THOMSON DISTRIBUTOR IRF440 TO-247 irf350* to-247 package THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF320 IRF322 irf420 IRF332

    IRF P 914 D

    Abstract: G-367 IRFF322
    Text: H E D | 4 flS S 4 S a 000=1300 S | Data Sheet No. PD-9.356D IN T E R N A T IO N A L R E C T IF I E R T - 3 9 - o T INTERNATIONAL RECTIFIER IO R HEXFET TR A N S IS TO R S IRFF3SO IRFF3S1 INJ-CHANNEL POWER MOSFETs TO-3S PACKAGE IR F F 3 2 2 IR F F 3 S 3 400 Volt, 1.8 Ohm HEXFET


    OCR Scan     		PDF G-370 IRF P 914 D G-367 IRFF322

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    THOMSON DISTRIBUTOR 58e d

    Abstract: 9026873 IRFF121 THOMSON 58E THOMSON 58E CASE OUTLINE THOMSON DISTRIBUTOR 2N6782 IRFF014 IRFF034 IRFF111
    Text: THOMSON/ DISTRIBUTOR HEXFET SñE D • li^ J Rectifier Hermetic Package TO-39 N-Channel Part Number 1 RDS on On-State Resistance (Ohms) Ip Continuous Drain Current 25eC Case (Amps) 1dm Pul» Drain Current (Amps) Pq Max Power Dissipation (Watts) 25 65 15 25


    OCR Scan     		PDF IRFF014 T0-205AF IRFF034 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 IRFF112 THOMSON DISTRIBUTOR 58e d 9026873 IRFF121 THOMSON 58E THOMSON 58E CASE OUTLINE THOMSON DISTRIBUTOR 2N6782 IRFF034 IRFF111

    Untitled

    Abstract: No abstract text available
    Text: International ï» ! Rectifier HEXFET Power MOSFETs Hermetic Package TO-39 N-Channel Part Number V o s Drain Source Voltage Volts IRFF014 IRFF034 60 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 &DS(on) On-State Resistance (Ohms) I q Continuous Drain Current


    OCR Scan     		PDF IRFF014 IRFF034 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 IRFF112 2N6782