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    IRFI9530G Search Results

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    IRFI9530G Price and Stock

    Vishay Siliconix IRFI9530G

    MOSFET P-CH 100V 7.7A TO220-3
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    DigiKey IRFI9530G Tube
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    Bristol Electronics IRFI9530G 5
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    ComSIT USA IRFI9530G 1,650
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    Vishay Intertechnologies IRFI9530GPBF

    MOSFETs TO220 100V 7.7A P-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IRFI9530GPBF 1,354
    • 1 $1.61
    • 10 $1.19
    • 100 $1.18
    • 1000 $1.18
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    Verical IRFI9530GPBF 2,928 12
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    • 100 $0.9274
    • 1000 $0.8464
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    IRFI9530GPBF 925 7
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    • 10 $0.8667
    • 100 $0.8667
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    IRFI9530GPBF 550 50
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    • 100 $1.0486
    • 1000 $0.9604
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    Arrow Electronics IRFI9530GPBF 2,934 13 Weeks 1
    • 1 $1.2883
    • 10 $1.2883
    • 100 $0.9272
    • 1000 $0.8462
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    IRFI9530GPBF 925 13 Weeks 1
    • 1 $1.307
    • 10 $1.307
    • 100 $0.9468
    • 1000 $0.8667
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    Newark IRFI9530GPBF Bulk 1
    • 1 $1.65
    • 10 $1.54
    • 100 $1.54
    • 1000 $1.54
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    RS IRFI9530GPBF Bulk 1,000
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    • 1000 $1.55
    • 10000 $1.47
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    TTI IRFI9530GPBF Tube 1,000
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    • 1000 $0.95
    • 10000 $0.91
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    TME IRFI9530GPBF 1,113 1
    • 1 $1.15
    • 10 $0.92
    • 100 $0.83
    • 1000 $0.77
    • 10000 $0.77
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    Chip1Stop IRFI9530GPBF 2,934
    • 1 $3.51
    • 10 $1.11
    • 100 $0.844
    • 1000 $0.546
    • 10000 $0.541
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    IRFI9530GPBF 925
    • 1 $1.41
    • 10 $1.41
    • 100 $1.0593
    • 1000 $1.0593
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    EBV Elektronik IRFI9530GPBF 5,200 14 Weeks 50
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    New Advantage Corporation IRFI9530GPBF 4,150 1
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    • 1000 $1.12
    • 10000 $1.04
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    International Rectifier IRFI9530G

    MOSFET Transistor, P-Channel, SOT-186
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFI9530G 240
    • 1 $3.12
    • 10 $3.12
    • 100 $1.56
    • 1000 $1.443
    • 10000 $1.443
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    International Rectifier IRFI9530GPBF

    MOSFET Transistor, P-Channel, SOT-186
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFI9530GPBF 66
    • 1 $3.92
    • 10 $2.45
    • 100 $2.156
    • 1000 $2.156
    • 10000 $2.156
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    Vishay Siliconix IRFI9530GPBF

    Power MOSFET Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA IRFI9530GPBF 49
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    Find more IRFI9530G price and stock on Findchips.com

    IRFI9530G Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFI9530G Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFI9530G Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 7.7A TO220FP Original PDF
    IRFI9530G International Rectifier HEXFET Power Mosfet Scan PDF
    IRFI9530G International Rectifier HEXFET Power MOSFET Scan PDF
    IRFI9530G International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, Logic, -100V, -7.7A, Pkg Iso TO-220 Fullpak Scan PDF
    IRFI9530G Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFI9530G Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFI9530GPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 7.7A TO220FP Original PDF
    IRFI9530GPBF International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Scan PDF

    IRFI9530G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 94932 IRFI9530GPbF • Lead-Free Document Number: 91163 1/8/04 www.vishay.com 1 IRFI9530GPbF Document Number: 91163 www.vishay.com 2 IRFI9530GPbF Document Number: 91163 www.vishay.com 3 IRFI9530GPbF Document Number: 91163 www.vishay.com 4 IRFI9530GPbF


    Original     		PDF IRFI9530GPbF O-220 08-Mar-07

    IRFI9530G

    Abstract: SiHFI9530G SiHFI9530G-E3 irfi9530
    Text: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature


    Original     		PDF IRFI9530G, SiHFI9530G O-220 18-Jul-08 IRFI9530G SiHFI9530G-E3 irfi9530

    IRFI9530G

    Abstract: SiHFI9530G SiHFI9530G-E3 irfi9530g_
    Text: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature


    Original     		PDF IRFI9530G, SiHFI9530G O-220 11-Mar-11 IRFI9530G SiHFI9530G-E3 irfi9530g_

    Untitled

    Abstract: No abstract text available
    Text: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature


    Original     		PDF IRFI9530G, SiHFI9530G O-220 12-Mar-07

    AN609

    Abstract: IRFI9530G SiHFI9530G 14077 ON
    Text: IRFI9530G_RC, SiHFI9530G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFI9530G SiHFI9530G AN609, 11-May-10 AN609 14077 ON

    Untitled

    Abstract: No abstract text available
    Text: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature


    Original     		PDF IRFI9530G, SiHFI9530G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: PD - 94932 IRFI9530GPbF • Lead-Free www.irf.com 1 1/8/04 IRFI9530GPbF 2 www.irf.com IRFI9530GPbF www.irf.com 3 IRFI9530GPbF 4 www.irf.com IRFI9530GPbF www.irf.com 5 IRFI9530GPbF 6 www.irf.com IRFI9530GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRFI9530GPbF O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 94932 IRFI9530GPbF • Lead-Free Document Number: 91163 1/8/04 www.vishay.com 1 IRFI9530GPbF Document Number: 91163 www.vishay.com 2 IRFI9530GPbF Document Number: 91163 www.vishay.com 3 IRFI9530GPbF Document Number: 91163 www.vishay.com 4 IRFI9530GPbF


    Original     		PDF IRFI9530GPbF O-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature


    Original     		PDF IRFI9530G, SiHFI9530G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    irfi9530g

    Abstract: SiHFI9530G SiHFI9530G-E3
    Text: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature


    Original     		PDF IRFI9530G, SiHFI9530G O-220 18-Jul-08 irfi9530g SiHFI9530G-E3

    Untitled

    Abstract: No abstract text available
    Text: PD - 94932 IRFI9530GPbF • Lead-Free 1 IRFI9530GPbF 2 IRFI9530GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E X AM P L E : T H IS IS AN IR F I8 4 0 G W IT H AS S E M B L Y L OT CODE 3 432


    Original     		PDF IRFI9530GPbF O-220

    Untitled

    Abstract: No abstract text available
    Text: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature


    Original     		PDF IRFI9530G, SiHFI9530G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


    Original     		PDF O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    irf 425

    Abstract: ICL8038CCPD HSMS-2820-BLK icl8038ccjd IRF 315 HSDL-1001-001 hsmp-3890 ICL232CPE HSMP 2820 ICM7211AMIPL
    Text: Semiconductor Directory Page 1.34 1.58 1.54 0.87 2.09 IRF INT IRF IRF IRF 815 824 815 Ñ 816 IRF9410 IRF9510 IRF9510S IRF9520 IRF9520 IRF9520N IRF9530 1.28 0.80 1.47 0.74 0.62 1.04 1.23 IRF IRF IRF IRF INT IRF INT 816 815 816 815 Ñ 814 824 Ñ 824 Ñ 816 815


    Original     		PDF HIP4080AIP ICM7243BIPL IRF3515S IRF840 HIP4081AIP ICM7555CN IRF3710 HIP4082IP ICM7555IBA irf 425 ICL8038CCPD HSMS-2820-BLK icl8038ccjd IRF 315 HSDL-1001-001 hsmp-3890 ICL232CPE HSMP 2820 ICM7211AMIPL

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    1RF19530G

    Abstract: IRFI9530G b46a 7H100
    Text: International S Rectifier PD-9.836 IRFI9530G HEXFET Power MOSFET • • • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance


    OCR Scan     		PDF IRFI9530G O-220 1RFI9530G 1RF19530G b46a 7H100

    CD 1517

    Abstract: IRFI9530G LS77
    Text: International S Rectifier PD-9.836 IRFI9530G HEXFET Power MOSFET • • • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance


    OCR Scan     		PDF IRFI9530G O-220 CD 1517 IRFI9530G LS77

    Untitled

    Abstract: No abstract text available
    Text: International ï “r Rectifier 4655452 Q Q l S n O bDb • INR IRFI9530G HEXFET Power M O SFET • • • • • • • PD-9.836 INTERNATIONAL R E C T I F I E R b5E T> Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm


    OCR Scan     		PDF IRFI9530G

    IRL1540N

    Abstract: IRL1540 IRL1Z24N RF19630G IRL15 irliz34
    Text: International IöR Rectifier 5 NJTÏNA" O-’ -* *r '~< ' HEXFET Power MOSFETs • d ■ d V BR DSS Continuous R0 Drain-to-Source RDS(on) Continuous Drain Current On-State Drain Current Max. mainai Max. Power Breakdown 100° Part Resistance Resistance Dissipation


    OCR Scan     		PDF O-220 RLI2203N IRLI3803 IRL1Z24N IRLIZ34N IRLI3705N IRLI2505 IRLI520N IRLI530N IRL1540N IRL1540N IRL1540 RF19630G IRL15 irliz34

    fu110

    Abstract: No abstract text available
    Text: I n t e r n a t i o n a l R e c t if ie r HEXFET Power MOSFETS V B%SS Draln-to-Source BreakdownVoltage (Volt. Part Number RDSfon) On-State Resistance (Ohms) iQContinuous Drain Current 100* C 25* C (Amps) (Amps) RthJC Max Thermal Resistance row) PdOTo 2S“C


    OCR Scan     		PDF O-251AA IRFD9014 IRFD9024 IRFD9110 IRFD9120 IRFD9210 IRFD9220 IRFU4105 IRFU014 IRFU024N fu110