IRFI9530G
Abstract: SiHFI9530G SiHFI9530G-E3 irfi9530
Text: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
|
Original
|
PDF
|
IRFI9530G,
SiHFI9530G
O-220
18-Jul-08
IRFI9530G
SiHFI9530G-E3
irfi9530
|
IRFI9530G
Abstract: SiHFI9530G SiHFI9530G-E3 irfi9530g_
Text: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
|
Original
|
PDF
|
IRFI9530G,
SiHFI9530G
O-220
11-Mar-11
IRFI9530G
SiHFI9530G-E3
irfi9530g_
|
Untitled
Abstract: No abstract text available
Text: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
|
Original
|
PDF
|
IRFI9530G,
SiHFI9530G
O-220
12-Mar-07
|
AN609
Abstract: IRFI9530G SiHFI9530G 14077 ON
Text: IRFI9530G_RC, SiHFI9530G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
|
Original
|
PDF
|
IRFI9530G
SiHFI9530G
AN609,
11-May-10
AN609
14077 ON
|
Untitled
Abstract: No abstract text available
Text: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
|
Original
|
PDF
|
IRFI9530G,
SiHFI9530G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
|
Original
|
PDF
|
IRFI9530G,
SiHFI9530G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
irfi9530g
Abstract: SiHFI9530G SiHFI9530G-E3
Text: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
|
Original
|
PDF
|
IRFI9530G,
SiHFI9530G
O-220
18-Jul-08
irfi9530g
SiHFI9530G-E3
|
Untitled
Abstract: No abstract text available
Text: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
|
Original
|
PDF
|
IRFI9530G,
SiHFI9530G
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|