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    IRFIZ44 Search Results

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    IRFIZ44 Price and Stock

    Vishay Siliconix IRFIZ44G

    MOSFET N-CH 60V 30A TO220-3
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    DigiKey IRFIZ44G Tube
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    Vishay Siliconix IRFIZ44GPBF

    MOSFET N-CH 60V 30A TO220-3
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    DigiKey IRFIZ44GPBF Tube 1,000
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    Bristol Electronics IRFIZ44GPBF 700
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    Quest Components IRFIZ44GPBF 560
    • 1 $3.504
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    • 1000 $1.9272
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    Infineon Technologies AG IRFIZ44NPBF

    Trans MOSFET N-CH 55V 31A 3-Pin(3+Tab) TO-220 Full-Pak - Rail/Tube (Alt: IRFIZ44NPBF)
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    Avnet Americas IRFIZ44NPBF Tube 4 Weeks 484
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    IRFIZ44NPBF Tube 10 Weeks 2,000
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    Mouser Electronics IRFIZ44NPBF 7,871
    • 1 $1.63
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    Newark IRFIZ44NPBF Bulk 1,119 1
    • 1 $1.66
    • 10 $1.36
    • 100 $1.12
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    RS IRFIZ44NPBF Bulk 1
    • 1 $1.27
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    Quest Components IRFIZ44NPBF 49
    • 1 $2.5
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    Rochester Electronics IRFIZ44NPBF 1,000 1
    • 1 $0.7544
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    • 100 $0.7091
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    TME IRFIZ44NPBF 141 1
    • 1 $1.315
    • 10 $0.825
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    EBV Elektronik IRFIZ44NPBF 11 Weeks 2,000
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    New Advantage Corporation IRFIZ44NPBF 1,300 1
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    Vishay Intertechnologies IRFIZ44GPBF

    MOSFET N-CHANNEL 60V - Tape and Reel (Alt: IRFIZ44GPBF)
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    Avnet Americas IRFIZ44GPBF Reel 13 Weeks 1,000
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    Mouser Electronics IRFIZ44GPBF 999
    • 1 $2.8
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    Newark IRFIZ44GPBF Bulk 1,000
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    TTI IRFIZ44GPBF Tube 1,000
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    TME IRFIZ44GPBF 1
    • 1 $1.68
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    EBV Elektronik IRFIZ44GPBF 14 Weeks 50
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    International Rectifier IRFIZ44N

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    Bristol Electronics IRFIZ44N 509 2
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    • 1000 $1.3432
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    IRFIZ44N 1
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    Quest Components IRFIZ44N 360
    • 1 $4.3875
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    • 1000 $1.9013
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    IRFIZ44N 80
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    IRFIZ44N 47
    • 1 $2.03
    • 10 $1.624
    • 100 $1.015
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    IRFIZ44N 1
    • 1 $3
    • 10 $3
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    Find more IRFIZ44 price and stock on Findchips.com

    IRFIZ44 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFIZ44 International Rectifier FullPak - Fully Isolated HEXFET Scan PDF
    IRFIZ44 Samsung Electronics N-Channel Power Mosfet Scan PDF
    IRFIZ44A Fairchild Semiconductor N-CHANNEL POWER MOSFET Original PDF
    IRFIZ44A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFIZ44A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFIZ44A Samsung Electronics Advanced Power MOSFET Scan PDF
    IRFIZ44G Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFIZ44G Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A TO220FP Original PDF
    IRFIZ44G International Rectifier HEXFET Power MOSFET Scan PDF
    IRFIZ44G International Rectifier HEXFET Power Mosfet Scan PDF
    IRFIZ44G Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFIZ44G Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFIZ44GPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A TO220FP Original PDF
    IRFIZ44GPBF International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Scan PDF
    IRFIZ44N General Semiconductor MOSFET, Enhancement Mode, N Channel, TO-220, 3-Pin Original PDF
    IRFIZ44N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Original PDF
    IRFIZ44N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRFIZ44N with Standard Packaging Original PDF
    IRFIZ44N International Rectifier HEXFET Power MOSFET Original PDF
    IRFIZ44N International Rectifier HEXFET Power MOSFET Original PDF
    IRFIZ44N Toshiba Power MOSFETs Cross Reference Guide Original PDF

    IRFIZ44 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFz44n equivalent

    Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
    Text: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFIZ44N O-220 IRFz44n equivalent IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630

    IRFIZ44N equivalent

    Abstract: IRF1010 IRFI840G IRFIZ44N IRFZ44N IRFz44n equivalent
    Text: Previous Datasheet Index Next Data Sheet PD 9.1403 IRFIZ44N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V


    Original     		PDF IRFIZ44N IRFIZ44N equivalent IRF1010 IRFI840G IRFIZ44N IRFZ44N IRFz44n equivalent

    IRFIZ44N

    Abstract: No abstract text available
    Text: IRFIZ44N N-Channel Enhancement-Mode MOSFET VDS 55V RDS ON 20mΩ ID 49A H C t N c E u TRENFET w Prod Ne G ITO-220AB 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) G 0.110 (2.80) 0.100 (2.54) 0.131 (3.39) DIA. 0.122 (3.08) 0.140 (3.56) DIA. 0.130 (3.30)


    Original     		PDF IRFIZ44N ITO-220AB 100ms IRFIZ44N

    Untitled

    Abstract: No abstract text available
    Text: IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 95 Qgs (nC) 27 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		PDF IRFIZ44G, SiHFIZ44G O-220 12-Mar-07

    SiHFIZ44G

    Abstract: No abstract text available
    Text: IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 95 Qgs (nC) 27 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		PDF IRFIZ44G, SiHFIZ44G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: PD - 94940 IRFIZ44GPbF • Lead-Free 1/13/04 Document Number: 91189 www.vishay.com 1 IRFIZ44GPbF Document Number: 91189 www.vishay.com 2 IRFIZ44GPbF Document Number: 91189 www.vishay.com 3 IRFIZ44GPbF Document Number: 91189 www.vishay.com 4 IRFIZ44GPbF Document Number: 91189


    Original     		PDF IRFIZ44GPbF O-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFIZ44G_RC, SiHFIZ44G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFIZ44G SiHFIZ44G AN609, 31-May-10

    SiHFIZ44G

    Abstract: IRFIZ44G SiHFIZ44G-E3
    Text: IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 95 Qgs (nC) 27 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		PDF IRFIZ44G, SiHFIZ44G O-220 18-Jul-08 IRFIZ44G SiHFIZ44G-E3

    IRFIZ44G

    Abstract: SiHFIZ44G SiHFIZ44G-E3
    Text: IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 95 Qgs (nC) 27 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		PDF IRFIZ44G, SiHFIZ44G O-220 18-Jul-08 IRFIZ44G SiHFIZ44G-E3

    B1370

    Abstract: R B1370 IRFz44n equivalent MOSFET IRFZ44N for irfz44n IRF1010 MOSFET TO-220 IRFIZ44N
    Text: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1403B IRFIZ44N O-220 B1370 R B1370 IRFz44n equivalent MOSFET IRFZ44N for irfz44n IRF1010 MOSFET TO-220 IRFIZ44N

    Untitled

    Abstract: No abstract text available
    Text: PD - 94836 IRFIZ44NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description


    Original     		PDF IRFIZ44NPbF O-220 I840G

    IRFIZ44

    Abstract: No abstract text available
    Text: IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 95 Qgs (nC) 27 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		PDF IRFIZ44G, SiHFIZ44G O-220 11-Mar-11 IRFIZ44

    SiHFIZ44G

    Abstract: No abstract text available
    Text: IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 95 Qgs (nC) 27 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		PDF IRFIZ44G, SiHFIZ44G O-220 O-220electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    MOSFET IRFZ44N

    Abstract: IRFZ44N IRFZ44N MOSFET
    Text: IRFIZ44NPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) g fs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance


    Original     		PDF IRFIZ44NPbF IRFZ44N O-220 I840G MOSFET IRFZ44N IRFZ44N MOSFET

    IRFz44n equivalent

    Abstract: datasheet of irfz44n IRF1010 IRFI840G IRFIZ44N IRFZ44N
    Text: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1403B IRFIZ44N O-220 IRFz44n equivalent datasheet of irfz44n IRF1010 IRFI840G IRFIZ44N IRFZ44N

    Untitled

    Abstract: No abstract text available
    Text: PD - 94940 IRFIZ44GPbF • Lead-Free 1/13/04 Document Number: 91189 www.vishay.com 1 IRFIZ44GPbF Document Number: 91189 www.vishay.com 2 IRFIZ44GPbF Document Number: 91189 www.vishay.com 3 IRFIZ44GPbF Document Number: 91189 www.vishay.com 4 IRFIZ44GPbF Document Number: 91189


    Original     		PDF IRFIZ44GPbF O-220 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1403B IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1403B IRFIZ44N O-220

    IRFIZ44

    Abstract: IRFIZ40 IRFWZ40 IRFWZ44 LS50A
    Text: N-CHANNEL POWER MOSFETS IRFWZ44/40 IRFIZ44/40 FEATURES • • • • • • • D!-PAK Lower R d sio n Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRFWZ44/40 IRFIZ44/40 IRFWZ44/IZ44 IRFWZ40/IZ40 IRFWZ44 IRFIZ44 IRFWZ40 IRFIZ40 LS50A

    FZ44N

    Abstract: IRFIZ44N equivalent fz44
    Text: PD - 9.1403A International IÖR Rectifier IRFIZ44N HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 55 V FÍDS on = 0 .0 2 4 Í 2 lD = 3 1 A


    OCR Scan     		PDF IRFIZ44N FZ44N IRFIZ44N equivalent fz44

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1403 International ¡^Rectifier IRFIZ44N PRELIMINARY H EXFET Power M O S F E T Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Vdss = 55 V R ü S o n = Id =


    OCR Scan     		PDF IRFIZ44N 0D23bc

    D52A

    Abstract: IRFIZ44G marking s73 PV-TJ
    Text: PD-9.753 International î ü Rectifier IRFIZ44G HEXFET Power MOSFET • • • • • •• Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance


    OCR Scan     		PDF IRFIZ44G T0220 D52A marking s73 PV-TJ

    irf1z44

    Abstract: IRF1Z44G 25A SCREW MOUNTED DIODE CD 1517 IRFIZ44G l129 VDSS60
    Text: PD-9.753 International S S Rectifier IRFIZ44G HEXFET P o w e r M O S F E T • • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance


    OCR Scan     		PDF IRFIZ44G O-220 irf1z44 IRF1Z44G 25A SCREW MOUNTED DIODE CD 1517 IRFIZ44G l129 VDSS60

    Untitled

    Abstract: No abstract text available
    Text: International ioR Rectifier 4ÔS5452 0 0 1 S 3 flô PD-9.753 IRFIZ44G INTERNATIONAL R E C T I F I E R HEXFET Power MOSFET • • • • • • I NR Û1T Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature


    OCR Scan     		PDF S5452 IRFIZ44G

    IRFz44n equivalent

    Abstract: diode c341 for irfz44n IRFIZ44N equivalent IRFZ44N
    Text: PD - 9.1403A International IGR Rectifier IRFIZ44N HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS ® • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Voss = 55V Ros on = 0.024Q


    OCR Scan     		PDF IRFIZ44N O-220 IRFz44n equivalent diode c341 for irfz44n IRFIZ44N equivalent IRFZ44N