RFP450
Abstract: IRFP RE 40 IRFP 450 FP450 IRFP450FI
Text: w SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE W R FP450 IR F P 4 5 0 F I I IR FP 451 IR FP 451 FI . . . IRFP450/FI IRFP451/FI ;LiO T «s V dss R DS on Id 500 V 500 V 0 .4 a 0 .4 i l 14 A 9 A 450 V 450 V 0 .4 £2 0.4 £2 14 A 9 A
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OCR Scan
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FP450
IRFP450/FI
IRFP451/FI
450/FI
452/FI
453/FI
451/FI
RFP450
IRFP RE 40
IRFP 450
IRFP450FI
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PDF
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IRFP RE 40
Abstract: IRFP P CHANNEL IRFP150 SGS Transistor
Text: r= Z SGS-THOM SON ^ 7#» HDfgMilLlKgirMDlgi IRFP 150/F I-151/FI IRFP 152/F I-153/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S on IRFP150 IRFP150FI 100 V 100 V 0.055 fi 0.055 Q IRFP151 IRFP151 FI 60 V 60 V 0.055 0.055 IRFP152 IRFP152FI
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OCR Scan
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150/F
I-151/FI
152/F
I-153/FI
IRFP150
IRFP150FI
IRFP151
IRFP152
IRFP152FI
IRFP RE 40
IRFP P CHANNEL
SGS Transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient
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OCR Scan
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IRFP250
O-247
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PDF
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IRFP150
Abstract: IRFP RE 40
Text: H a r r IRFP150, IRFP151, IRFP152, IRFP153 i s S E M I C O N D U C T O R 34A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 34A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRFP150,
IRFP151,
IRFP152,
IRFP153
TA170,
RFP153
IRFP150
IRFP RE 40
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PDF
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4511 MOSFET
Abstract: FP3-40 T 4512 H diode diode T 4512 H mosfet irfp 250 N
Text: h a r r is IRFP340R, IRFP341R IRFP342R, IRFP343R N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Package Features T O -2 4 7 • 11A and 8.7A, 350V and 400V TOP VIEW • rDS on = 0 .5 5 n and 0 .8 0 0 • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited
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OCR Scan
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IRFP340R,
IRFP341R
IRFP342R,
IRFP343R
IRFP341R,
IRFP343R
JRFP340R,
4511 MOSFET
FP3-40
T 4512 H diode
diode T 4512 H
mosfet irfp 250 N
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PDF
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IRFP RE 40
Abstract: irfp254b
Text: IRFP254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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Original
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IRFP254B
IRFP254B
FP001
IRFP RE 40
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PDF
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diode 4483
Abstract: IRFP150R irfp 350 n 4484 MOSfet
Text: IRFP150/151/152/153 IRFP150R/1 51R /152R/153R 23 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 • 34A and 40A, 60V - 100V TOP VIEW • r0S on = 0.055£1 and 0 .0 8 fl DRAIN (T A B ) • Single Pulse Avalanche Energy Rated*
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OCR Scan
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IRFP150/151/152/153
IRFP150R/1
/152R/153R
IRFP150,
IRFP151,
IRFP152,
IRFP153
IRFP150R,
IRFP151R,
IRFP152R,
diode 4483
IRFP150R
irfp 350 n
4484 MOSfet
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PDF
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Untitled
Abstract: No abstract text available
Text: • 4302271 0054115 132 ■ g H a r r is HAS IRFP240R, IRFP241R IRFP242R, IRFP243R N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Features Package T O -2 4 7 TOP VIEW • 18A and 20A, 200V - 150V • rDS on) - 0.1 80 and 0.220 DRAIN (TAB) • Single Pulse Avalanche Energy Rated
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OCR Scan
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IRFP240R,
IRFP241R
IRFP242R,
IRFP243R
IRFP241R,
IRFP243R
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PDF
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Untitled
Abstract: No abstract text available
Text: „ • 4305571 QD5451S *j H a r r is flSO ■ HAS _ _ _ _ IRFP340R, IRFP341R IRFP342R, IRFP343R N -C hannel Power MOSFETs Avalanche Energy Rated August 1991 Features Package TO -247 TOP VIEW • 1 1 A a n d S .7A , 3 5 0 V a n d 4 0 0 V • r D S (on = 0 . 5 5 f t a n d 0 .8 0 ft
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OCR Scan
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QD5451S
IRFP340R,
IRFP341R
IRFP342R,
IRFP343R
IRFP341R,
IRFP343R
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PDF
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IRFP 450 application
Abstract: IRFP340B
Text: IRFP340B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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Original
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IRFP340B
IRFP 450 application
IRFP340B
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PDF
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IRFP 450 application
Abstract: IRFP340B
Text: IRFP340B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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Original
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IRFP340B
IRFP 450 application
IRFP340B
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PDF
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Untitled
Abstract: No abstract text available
Text: • 43D5571 0D5MS3S t.4T gì HARRIS ■ HAS IR FP450/451/452/453 IRFP450R/451R /452R /453R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features Package TO -247 TOP VIEW • 12A and 14A, 450V - 500V • ro s o n = 0 .4 0 and 0 .5 fi
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OCR Scan
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43D5571
FP450/451/452/453
IRFP450R/451R
/452R
/453R
IRFP450,
IRFP451,
IRFP452,
IRFP453
IRFP450R,
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PDF
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RFP9240
Abstract: IRFP P CHANNEL MOSFET* 100v IRFP9240R IRFP9241R IRFP9242R IRFP924
Text: HARRIS SEMICOND SECTOR 33 HARRIS • 4□E D M302271 0D3S56S HAS 3 I R F P 9 2 4 0 R / P 9 2 4 1R IR F P 9 2 4 2 R /P 9 2 4 3 R Avalanche Energy Rated P-Channel Power MOSFETs August 1991 F e a tu re s P a ck a g e T O -2 4 7 TOP VIEW • -1 0 A a n d -1 2 A , -2 0 0 V and -1 5 0 V
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OCR Scan
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M302271
0D3556S
IRFP9240R/P9241R
IRFP9242R/P9243R
-200V
-150V
IRFP9240R,
IRFP9241R,
IRFP9242R
IRFP9243R
RFP9240
IRFP P CHANNEL MOSFET* 100v
IRFP9240R
IRFP9241R
IRFP924
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PDF
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RFP9240
Abstract: IRFP P CHANNEL MOSFET* 100v
Text: HARRIS SEMICOND SECTOR 23 H a r r i s IHAS M302271 DDBSSÖS 3 4QE D IMFP9240R/P9241R IRFP9242R/P9243R Avalanche Energy Rated -Channel Power MOSFETs August 1991 Features Package TO-247 TOP VIEW • -10 A and -12A, -20 0 V and -1S 0V • rDS ON = 0 .5 0 ii and 0 .7 fi
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OCR Scan
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IMFP9240R/P9241R
IRFP9242R/P9243R
O-247
M302271
IRFP9240R,
IRFP9241R,
IRFP9242R
IRFP9243R
RFP9240
IRFP P CHANNEL MOSFET* 100v
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PDF
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FP450
Abstract: 451R mosfet 4532 IRFP452 4532 MOSFET
Text: 2 3 H A R R IS IR FP450/451/452/453 IR FP450R /451R /452R /453R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 • 12A and 14A, 450V - 500V TOP VIEW • rDS on = 0 .4 ii and 0 .5 0 • Single Pulse Avalanche Energy Rated*
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OCR Scan
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FP450/45
FP450R
/451R
/452R
/453R
IRFP450,
IRFP451,
IRFP452,
IRFP453
IRFP450R,
FP450
451R
mosfet 4532
IRFP452
4532 MOSFET
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PDF
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TC 9151 P
Abstract: IRFP9151
Text: IR F P 9150 IR F P 9151 S ì H A R R IS Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Package Features T O -2 4 7 • -2 5 A , -8 0 V and -1 0 0 V TOP VIEW • rD S 0 N = 0 .1 5 0 H • Single Pulse Avalanche Energy Rated SOURCE • S O A is P o w er-D issip atio n Lim ited
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OCR Scan
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IRFP9151
92GS-44216
92CS-43323
IAF9150CF2
TC 9151 P
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PDF
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IRFP240R
Abstract: 4490 mosfet mosfet irfp 250 N 3fv 60
Text: m H a r r is IRFP240R, IRFP241R IRFP242R, IRFP243R N-Channel Power MOSFETs Avalanche Energy Rated A u g u s t 1991 F e a tu re s Package T O -2 4 7 • 18A and 20A , 2 0 0 V - 150V TOP VIEW • ro s o n = 0 .1 8 0 and 0 .2 2 0 DRAIN (TAB) • Single Pulse A valanche Energy Rated
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OCR Scan
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IRFP240R,
IRFP241R
IRFP242R,
IRFP243R
IRFP241R,
IRFP243R
IRFP240R
4490 mosfet
mosfet irfp 250 N
3fv 60
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PDF
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IRFP440B
Abstract: IRFP 260 M
Text: IRFP440B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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Original
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IRFP440B
IRFP440B
IRFP 260 M
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP250B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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Original
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IRFP250B
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PDF
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IRFP P CHANNEL MOSFET
Abstract: IRFP440B
Text: IRFP440B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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Original
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IRFP440B
IRFP P CHANNEL MOSFET
IRFP440B
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PDF
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IRFP240B
Abstract: No abstract text available
Text: IRFP240B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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Original
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IRFP240B
IRFP240B
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PDF
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mosfet irfp 250 N
Abstract: IRFP244B
Text: IRFP244B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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Original
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IRFP244B
mosfet irfp 250 N
IRFP244B
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PDF
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IRFP254B
Abstract: No abstract text available
Text: IRFP254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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Original
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IRFP254B
IRFP254B
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PDF
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IRFP450B
Abstract: IRFP P CHANNEL datasheet irfp450b mosfet irfp irfp450b mosfet
Text: IRFP450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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Original
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IRFP450B
IRFP450B
IRFP P CHANNEL
datasheet irfp450b mosfet
irfp
irfp450b mosfet
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PDF
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