Untitled
Abstract: No abstract text available
Text: i, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFP450 N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH MOSFET TYPE IRFP450 . . . . . VDSS 500 V RDS(on) ID < 0.4 n 14 A TYPICAL Ros(on)= 0.33 Q
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IRFP450
O-247
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power switching with IRFP450 schematic
Abstract: switching with IRFP450 schematic IRFP450 datasheet irfp450 mosfet IRFP450 from st irfp450 mosfet application IRFP450
Text: IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET TYPE IRFP450 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.4 Ω 14 A TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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IRFP450
O-247
power switching with IRFP450 schematic
switching with IRFP450 schematic
IRFP450
datasheet irfp450 mosfet
IRFP450 from st
irfp450 mosfet
application IRFP450
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IRFP450
Abstract: power switching with IRFP450 schematic switching with IRFP450 schematic datasheet irfp450 mosfet application IRFP450
Text: IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET TYPE IRFP450 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.4 Ω 14 A TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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IRFP450
O-247
IRFP450
power switching with IRFP450 schematic
switching with IRFP450 schematic
datasheet irfp450 mosfet
application IRFP450
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IRFP450
Abstract: No abstract text available
Text: IRFP450 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh II MOSFET TYPE IRFP450 • VDSS RDS on ID 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ) s (
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IRFP450
O-247
IRFP450
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datasheet irfp450 mosfet
Abstract: rectifier d 355 n 2000 IRFP450 TA17435 TB334
Text: IRFP450 Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP450 • 14A, 500V • rDS ON = 0.400Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds
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IRFP450
TB334
O-247
datasheet irfp450 mosfet
rectifier d 355 n 2000
IRFP450
TA17435
TB334
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IRFP450
Abstract: IRFP450FI 0613D IRFW450
Text: IRFP450/FI IRFW450 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID IRFP450 IRFP450FI IRFW450 500 V 500 V 500 V < 0.4 Ω < 0.4 Ω < 0.4 Ω 14 A 9A 14 A • ■ ■ ■ TO-247 TYPICAL RDS(on) = 0.33 Ω AVALANCHE RUGGED TECHNOLOGY
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IRFP450/FI
IRFW450
IRFP450
IRFP450FI
O-247
100oC
O-218
ISOWATT218
RFW450
IRFP450
IRFP450FI
0613D
IRFW450
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IRFP450
Abstract: power switching with IRFP450 schematic IRFP450S tr irfp450
Text: IRFP450 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh II MOSFET TYPE IRFP450 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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IRFP450
O-247
IRFP450
power switching with IRFP450 schematic
IRFP450S
tr irfp450
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PDF
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IRFP450
Abstract: power switching with IRFP450 schematic
Text: IRFP450 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh II MOSFET TYPE IRFP450 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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IRFP450
O-247
IRFP450
power switching with IRFP450 schematic
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IRFP450
Abstract: switching with IRFP450 schematic power switching with IRFP450 schematic application IRFP450 datasheet irfp450 mosfet SWITCHING WELDING BY MOSFET AC to DC smps circuit diagram irfp450 datasheet tr irfp450 WELDING SWITCHING APPLICATION NOTE
Text: IRFP450 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh II MOSFET TYPE IRFP450 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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IRFP450
O-247
IRFP450
switching with IRFP450 schematic
power switching with IRFP450 schematic
application IRFP450
datasheet irfp450 mosfet
SWITCHING WELDING BY MOSFET
AC to DC smps circuit diagram
irfp450 datasheet
tr irfp450
WELDING SWITCHING APPLICATION NOTE
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated IRFP450 FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
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IRFP450
IRFP450
OT429
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application IRFP450
Abstract: datasheet irfp450 mosfet IRFP450 TA17435 TB334 IRFP45
Text: IRFP450 Data Sheet January 2002 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features • 14A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP450
TA17435.
application IRFP450
datasheet irfp450 mosfet
IRFP450
TA17435
TB334
IRFP45
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application IRFP450
Abstract: No abstract text available
Text: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFP450,
SiHFP450
O-247
O-247
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
application IRFP450
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Untitled
Abstract: No abstract text available
Text: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFP450,
SiHFP450
O-247
O-247
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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application IRFP450
Abstract: No abstract text available
Text: IRFP450 Data Sheet Title FP4 bt A, 0V, 00 m, 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP450
TB334
application IRFP450
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application IRFP450
Abstract: IRFP450 SiHFP450
Text: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFP450,
SiHFP450
O-247
O-247
11-Mar-11
application IRFP450
IRFP450
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application IRFP450
Abstract: No abstract text available
Text: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFP450,
SiHFP450
O-247
O-247
O-220
11-Mar-11
application IRFP450
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IRFP630
Abstract: Irfp250 irfp460 IRFPG60
Text: International HEXFET Power MOSFETs [iöRRectifier t o - 247ac T0-247AC N-Channel Part Number IRFP044 IRFP048 IRFP054 IRFP064 IRFP140 IRFP150 IRFP240 IRFP250 IRFP260 IRFP244 IRFP254 IRFP264 IRFP340 IRFP350 IRFP360 IRFP344 IRFP354 IRFP440 IRFP448 IRFP450 IRFP460
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247ac
T0-247AC
IRFP044
IRFP048
IRFP054
IRFP064
IRFP140
IRFP150
IRFP240
IRFP250
IRFP630
Irfp250 irfp460
IRFPG60
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Untitled
Abstract: No abstract text available
Text: IRFP450 S e m iconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A ,500V Ordering Information • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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OCR Scan
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IRFP450
O-247
400i2
TB334
TA17435.
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRFP450/451 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRFP450/451
IRFP450
IRFP451
7Tb414e
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10VJ
Abstract: IRFP450 TA17435 TB334
Text: IRFP450 Semiconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A, 500V • rDS ON = 0.40062 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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OCR Scan
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IRFP450
TA17435.
IRFP450
O-247
10VJ
TA17435
TB334
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irfp450
Abstract: irf450 mosfet 452 mosfet IRF450 ir 451 451 MOSFET tr irfp450 irfp450 ir irfp450 mosfet irf450 switching
Text: IRFP450/451/452/453 IRF450/451/452/453 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area
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IRFP450/451/452/453
IRF450/451/452/453
IRFP450/IRF450
IRFP451
/IRF451
IRFP452/IRF452
IRFP453/IRF453
IRFP450
IRF450
IRF451
mosfet 452
mosfet IRF450
ir 451
451 MOSFET
tr irfp450
irfp450 ir
irfp450 mosfet
irf450 switching
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diode B14A
Abstract: B14A diode 1RFP450 diode b14A surface B14A B14A marking 1D24 IRFP450
Text: International Rectifier PD-9.458C IRFP450 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 500V ^DS on = 0 -4 0 Í2
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IRFP450
O-247
T0-220
O-218
diode B14A
B14A diode
1RFP450
diode b14A surface
B14A
B14A marking
1D24
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switching with IRFP450 schematic
Abstract: power switching with IRFP450 schematic IRFP450 STE36N50 LD36A GC54800
Text: SGS-THOMSON STE36N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE Voss R o S o n to STE36N50 500 V < 0.14 £! 36 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY . {SEE IRFP450 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER
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STE36N50
IRFP450
E81743)
100RG
100Rc
cc5609
switching with IRFP450 schematic
power switching with IRFP450 schematic
LD36A
GC54800
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IRFP450
Abstract: irfp450 ir ir irfp450
Text: International S Rectifier PD-9.458C IRFP450 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 500V R DS on = 0 - 4 0 0
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IRFP450
0-40O
O-247
O-220
O-218
IRFP450
irfp450 ir
ir irfp450
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