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    IRFR3209A Price and Stock

    HARTING Technology Group IRFR3209A

    3.1A, 400V, 1.800 OHM, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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    ComSIT USA IRFR3209A 5,000
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    IRFR3209A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFR3209A Fairchild Semiconductor 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs Original PDF
    IRFR3209A Fairchild Semiconductor 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFET Original PDF
    IRFR3209A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRFR3209A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ifu320

    Abstract: ifr320 irfu320 IRFR320 IRFR3209A TA17404 TB334
    Text: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRFR320, IRFU320 TA17404. ifu320 ifr320 irfu320 IRFR320 IRFR3209A TA17404 TB334

    ifu320

    Abstract: ifr320 irfu320 TB334 IRFR320 IRFR3209A TA17404
    Text: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRFR320, IRFU320 TA17404. ifu320 ifr320 irfu320 TB334 IRFR320 IRFR3209A TA17404

    ifr320

    Abstract: ifu320 irfu320 IRFR320 IRFR3209A TA17404 TB334
    Text: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRFR320, IRFU320 TA17404. ifr320 ifu320 irfu320 IRFR320 IRFR3209A TA17404 TB334

    IFU320

    Abstract: ifr320 fu320
    Text: IRFR320, IR FU320 S e m iconductor Data Sheet 3.1 A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF IRFR320, FU320 IRFU320 IFU320 ifr320 fu320

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.6A and 3.1 A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 RFR322,