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    IRFS634 Search Results

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    IRFS634 Price and Stock

    Rochester Electronics LLC IRFS634B

    N-CHANNEL POWER MOSFET
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    DigiKey IRFS634B Bulk 1,665
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    Rochester Electronics LLC IRFS634BT

    TRANS MOSFET N-CH 250V 8.1A T/R
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    DigiKey IRFS634BT Bulk 1,665
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    Rochester Electronics LLC IRFS634B_FP001

    MOSFET N-CH 250V 8.1A TO220F
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    DigiKey IRFS634B_FP001 Tube 606
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    onsemi IRFS634B_FP001

    MOSFET N-CH 250V 8.1A TO220F
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    Fairchild Semiconductor Corporation IRFS634B

    8.1A, 250V, 0.45ohm, N-Channel Power MOSFET '
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    Rochester Electronics IRFS634B 4,633 1
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    ComSIT USA IRFS634B 1,650
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    IRFS634 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS634 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS634 Unknown FET Data Book Scan PDF
    IRFS634 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS634 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS634A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFS634B Fairchild Semiconductor 250 V N-Channel MOSFET Original PDF
    IRFS634B Fairchild Semiconductor 250V N-Channel MOSFET Original PDF
    IRFS634B_FP001 Fairchild Semiconductor 250V N-Channel B-FET / Substitute of IRFS634 & IRFS634A Original PDF
    IRFS634BT Fairchild Semiconductor 250V N-Channel B-FET / Substitute of IRFS634 & IRFS634A Original PDF
    IRFS634BT_FP001 Fairchild Semiconductor 250V N-Channel B-FET / Substitute of IRFS634 & IRFS634A Original PDF

    IRFS634 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF634A

    Abstract: irf 405 MOSFET IRF 940
    Text: IRF634B/IRFS634B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


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    IRF634B/IRFS634B O-220 FP001 O-220 IRF634B FP001 IRF634A irf 405 MOSFET IRF 940 PDF

    IRFS634A

    Abstract: irf 634b irf634b
    Text: IRF634B/IRFS634B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


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    IRF634B/IRFS634B O-220 FP001 O-220F IRFS634B IRFS634BT FP001 IRFS634A irf 634b irf634b PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF634B/IRFS634B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


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    IRF634B/IRFS634B O-220 PDF

    IRFS634B

    Abstract: No abstract text available
    Text: IRFS634B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


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    IRFS634B IRFS634B PDF

    IRF634B

    Abstract: IRFS634B
    Text: IRF634B/IRFS634B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


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    IRF634B/IRFS634B O-220 IRF634B IRFS634B PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


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    PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


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    SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 PDF

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


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    Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    IRFS630A

    Abstract: IRFS634A SSS7N60B SSS2N60B FQPF11P06 FQPF13N10 SSS7N60B equivalent IRFS614B SSS10N60b fqpf16n15
    Text: Discrete MOSFETs TO-220F RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220F N-Channel FQPF85N06 60 Single 0.01 - - - 86 53 62 FQPF65N06 60 Single 0.016 - - - 48 40 56


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    O-220F O-220F FQPF85N06 FQPF65N06 FQPF55N06 FQPF50N06 FQPF30N06 FQPF20N06 FQPF13N06 FQPF50N06L IRFS630A IRFS634A SSS7N60B SSS2N60B FQPF11P06 FQPF13N10 SSS7N60B equivalent IRFS614B SSS10N60b fqpf16n15 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    sss4n60a

    Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
    Text: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high


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    IRF830A IRF830B Power247TM, sss4n60a IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china PDF

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRFS634/635 FEATURES • • • • • • • TO-220F Low er R ds ON Im proved in d u c tive ru g g e d n e s s F ast sw itch in g tim es R ug ged polysilico n g a te cell stru ctu re Low er in p u t c a p a c ita n c e E x te n d e d safe o p e ra tin g area


    OCR Scan
    IRFS634/635 O-220F PDF

    irfs634a

    Abstract: kode diode
    Text: IRFS634A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax. @ Vos*260V


    OCR Scan
    IRFS634A T0-220F irfs634a kode diode PDF

    sg 81a

    Abstract: IRFS635 Z012I IRFS634 samsung 019
    Text: SAMSUNG ELECTRONICS INC b?E D • T'ìbMlME □017354 BMb N-CHANNEL POWER MOSFETS IRFS634/635 FEATURES • • • • • • • Low er Rds o n Im proved in d u c tiv e ru g g e d n e ss Fast s w itc h in g tim e s R ugged p o ly s ilic o n g a te c e ll stru ctu re


    OCR Scan
    IRFS634/635 O-220F IRFS634/635 IRFS634 IRFS635 IRFS634 GD173SÃ sg 81a Z012I samsung 019 PDF

    IRFS634A

    Abstract: No abstract text available
    Text: IRFS634A Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 250 V ^ D S o n = 0 .4 5 Q. o ■ B V DSS - ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|^A(Max.) @ VDS = 250V


    OCR Scan
    IRFS634A PDF

    IRFS634

    Abstract: OS125
    Text: N-CHANNEL POWER MOSFETS IRFS634 FEATURES • • • • • • • Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan
    IRFS634 IRFS634 O-220 OS125 PDF

    irfs634a

    Abstract: MOSFET 719
    Text: IRFS634A Advanced Power MOSFET FEATURES BVdss = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 jiA M ax. @ ■ Lower Ros(on) : 0 327 £2 (Typ.)


    OCR Scan
    IRFS634A irfs634a MOSFET 719 PDF

    SSS60N

    Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
    Text: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Part Number BV d ss V lo(on)(A) RDS(on)(Q) FWjc(KTW) PD(Watt) Page IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 50 13.00 14.00 20.00 28.00 30.00 36.00 0.100 0.084 0.050 0.028 0.024 0.018 4.16 4.00


    OCR Scan
    O-220 IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 IRFSZ24 SSS15N06 IRFSZ34 SSS60N sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830 PDF

    irf1740

    Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
    Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040


    OCR Scan
    SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640 PDF

    IRFS540

    Abstract: IRFS541 irfsz22 IRFS634 irfs630 IRFS522
    Text: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL BVdss V Part Number ID(onXA) RDS(onXß) 14.00 15.00 25.00 30.00 35.00 35.00 0.120 0.100 0.070 0.050 0.035 0.028 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 60.00 14.00 15.00 25.00 30.00 35.00


    OCR Scan
    O-220 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 IRFSZ25 IRFSZ24 IRFSZ35 IRFS540 IRFS541 IRFS634 irfs630 IRFS522 PDF

    1RFS640A

    Abstract: irf530a irf630a ssp4n60as irfs630a IRF540A SSP2N60A SSS7N60A IRFZ44A SSP45N20A
    Text: Device List T0-220 1RFZ14A IRFZ24A IRFZ34A IRFZ44A IRF510A IRF520A IRF530A IRF540A [RF550A SSP70N10A IRF610A IRF620A IRF630A IRF640A IRF650A SSP45N20A IRF614A IRF624A IRF634A IRF644A IRF654A IRF710A IRF720A IRF730A IRF740A IRF750A SSP1N50A [RF820A IRF830A


    OCR Scan
    T0-220 1RFZ14A IRFZ24A IRFZ34A IRFZ44A IRF510A IRF520A IRF530A IRF540A RF550A 1RFS640A irf630a ssp4n60as irfs630a IRF540A SSP2N60A SSS7N60A SSP45N20A PDF