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    IRFS645 Search Results

    IRFS645 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS645 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS645 Unknown FET Data Book Scan PDF
    IRFS645 Samsung Electronics N-Channel Power MOSFETS Scan PDF

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    IRFS540

    Abstract: IRFS541 irfsz22 IRFS634 irfs630 IRFS522
    Text: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL BVdss V Part Number ID(onXA) RDS(onXß) 14.00 15.00 25.00 30.00 35.00 35.00 0.120 0.100 0.070 0.050 0.035 0.028 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 60.00 14.00 15.00 25.00 30.00 35.00


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    PDF O-220 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 IRFSZ25 IRFSZ24 IRFSZ35 IRFS540 IRFS541 IRFS634 irfs630 IRFS522

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRFS644/645 FEATURES • • • • • • • Lower R d s <o n > Improved inductive ruggedness Fast switching times Rugged poiysiiicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF IRFS644/645 IRFS644 IRFS645

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


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    PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    IRFS645

    Abstract: IRFS644
    Text: SAMSUNG ELECTRONICS INC b?E D IRFS644/645 71b41M2 001735^ Ô2Ô « S M Ò K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


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    PDF IRFS644/645 to-220F IRFS644/645 IRFS644 IRFS645 GG173h3 VIRFS644