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    IRFS830 Price and Stock

    Rochester Electronics LLC IRFS830B

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFS830B Bulk 11,242 1,110
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.27
    		Buy Now

    Samsung Semiconductor IRFS830A

    MOSFET Transistor, N-Channel, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFS830A 22
    • 1 $1.5
    • 10 $1.25
    • 100 $0.9
    • 1000 $0.9
    • 10000 $0.9
    		Buy Now

    Fairchild Semiconductor Corporation IRFS830B

    4.5A, 500V, 1.5ohm, N-Channel Power MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRFS830B 7,890 1
    • 1 $0.26
    • 10 $0.26
    • 100 $0.2444
    • 1000 $0.221
    • 10000 $0.221
    		Buy Now

    IRFS830 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS830 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    IRFS830 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS830 Unknown FET Data Book Scan PDF
    IRFS830 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS830 Samsung Electronics N-Channel Power MOSFET TO-220F Scan PDF
    IRFS830A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFS830A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFS830B Fairchild Semiconductor 500 V N-Channel MOSFET Original PDF
    IRFS830BT Fairchild Semiconductor 500V N-Channel B-FET / Substitute of IRFS830 & IRFS830A Original PDF

    IRFS830 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF830B

    Abstract: IRFS830 IRFS830B
    Text: IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF830B/IRFS830B IRF830B IRFS830 IRFS830B

    IRFS830A

    Abstract: No abstract text available
    Text: IRFS830A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS on = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 500V


    Original     		PDF IRFS830A O-220F IRFS830A

    Untitled

    Abstract: No abstract text available
    Text: IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRFS830B

    irf830b

    Abstract: No abstract text available
    Text: IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF830B/IRFS830B Improved00% IRFS830B IRFS830 IRFS830A IRFS830BT O-220F O-220F irf830b

    Untitled

    Abstract: No abstract text available
    Text: IRF830B/IRFS830B 500V N-Channel MOSFET Features • • • • • • TO-220 TO-220F IRF Series IRFS Series 4.5A, 500V, RDS on = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original     		PDF IRF830B/IRFS830B O-220 O-220F 54TYP 00x45Â

    IRFS830B

    Abstract: No abstract text available
    Text: IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF830B/IRFS830B IRFS830B

    0.33uf 630v

    Abstract: TNR 470v TRANSFORMER EI2820 103 Variable resistor EI2820 10D09 36W Fluorescent Lamp Inverter design ELECTRONIC BALLAST 36W circuit diagram 120T 1N4007
    Text: www.fairchildsemi.com KA7543 Advanced Feedback Dimming Ballast Control IC Features Descriptions • • • • • • • • • • • • • The KA7543 is an advanced lamp current feedback dimming control IC. This ballast control IC provides all of the


    Original     		PDF KA7543 KA7543 KA7543. 0.33uf 630v TNR 470v TRANSFORMER EI2820 103 Variable resistor EI2820 10D09 36W Fluorescent Lamp Inverter design ELECTRONIC BALLAST 36W circuit diagram 120T 1N4007

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    0.22UF 275VAC CAPACITOR

    Abstract: 24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM NTC 5R1 22uf 450v electrolytic capacitor 103 Variable resistor "EI CORE" EI3026 FAN7527B 12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM EI3530
    Text: www.fairchildsemi.com Application Note AN4121 Design of Power Factor Correction Circuit Using FAN7527B 1. Introduction power factor is obtained. The FAN7527B is an active power factor correction PFC controller for boost PFC application which operates in the


    Original     		PDF AN4121 FAN7527B FAN7527B 0.22UF 275VAC CAPACITOR 24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM NTC 5R1 22uf 450v electrolytic capacitor 103 Variable resistor "EI CORE" EI3026 12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM EI3530

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    IRFS830

    Abstract: IRFS831 IRFS832 IRFS833 rectifier 832
    Text: SAMSUNG ELECTRONICS INC b7E D • 7^1,4142 0G173Ô4 Tñ3 ■ SMGK N-CHANNEL POWER MOSFETS IRFS830/831/832/833 FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance


    OCR Scan     		PDF 71b4m2 0G173A4 IRFS830/831/832/833 IRFS830 IRFS831 IRFS832 IRFS833 Vos-400V\ T-253C rectifier 832

    DIODE S4 45a

    Abstract: IRFS830 250M C055 IRFS831
    Text: N-CHANNEL POWER MOSFETS IRFS830/831 FEATURES • Lower R ds ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRFS830/831 IRFS830 IRFS831 O-220 002A321! DIODE S4 45a 250M C055

    IRFS830A

    Abstract: No abstract text available
    Text: IRFS830A Advanced Power MOSFET FEATURES B V DSs ~ 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA Max. @ VDS= 500V


    OCR Scan     		PDF IRFS830A 200nF> IRFS830A

    FS830

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRFS830/831/832/833 FEATURES • L ow e r R d s ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower Input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRFS830/831/832/833 FS830

    1RFS830A

    Abstract: 1RFS830
    Text: IRFS830A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max @ Lower R ^ on; : 1.169 i i (Typ.)


    OCR Scan     		PDF IRFS830A O-220F IRFS830À 1RFS830A 1RFS830A 1RFS830

    IRFS830A

    Abstract: No abstract text available
    Text: IRFS830A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 500 V ^ D S o n = 1 . 5 Q. lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 n A (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFS830A

    1RFS730

    Abstract: IRFS640 1rfs634 IRFS830 IRFS541 IRFS643 samsung IRFS632 IRFS634 1rfs63
    Text: - m % tt f ft * t Vd s or € i % £ Vg s Id Id s s Ig s s Pd Vgs th ft $a 4# Ü Ds on) Vd s = '14 * /CU (V) (A) min * /CH (W) (nA) Vg s (V) (HA) Vd s (V) Ciss g fs iD(on) C oss Crss (V) (V) ft B m m V g s =0 (max) max Id *typ (mA) (0) Vg s (V) Id (A) *typ


    OCR Scan     		PDF Ta-25CC) Ta-25Â IRFS532 O-220 IRFS533 1BFS540 IRFS541 1RFS542 1RFS730 IRFS640 1rfs634 IRFS830 IRFS643 samsung IRFS632 IRFS634 1rfs63

    IRFS9620

    Abstract: IRFS9522 SSS6N60 IRFS820
    Text: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL Continued BVdss(V) ID(onKA) RDS(onXQ) Part Number 2.20 2.50 4.00 4.50 7.00 8.00 4.000 3.000 2.000 1.500 1.100 0.850 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 500.00 2.20 2.50 4.00 4.50 7.00


    OCR Scan     		PDF O-220 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 IRFS822 IRFS820 IRFS832 IRFS9620 IRFS9522 SSS6N60

    irf1740

    Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
    Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040


    OCR Scan     		PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640