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    IRFSZ30 Search Results

    IRFSZ30 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFSZ30 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFSZ30 Samsung Electronics N-Channel Power MOSFETS Scan PDF

    IRFSZ30 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: S A M S UN G E L E C T R O N I C S INC bHE D • T T b M l M S 0 0 1 2 4 2 5 fl?T ■ SM6K IRFSZ34/35 IRFSZ30/32 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    PDF IRFSZ34/35 IRFSZ30/32 IRFSZ34 IRFSZ35 IRFSZ30 IRFSZ32 IRFSZ30

    SSS60N

    Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
    Text: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Part Number BV d ss V lo(on)(A) RDS(on)(Q) FWjc(KTW) PD(Watt) Page IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 50 13.00 14.00 20.00 28.00 30.00 36.00 0.100 0.084 0.050 0.028 0.024 0.018 4.16 4.00


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    PDF O-220 IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 IRFSZ24 SSS15N06 IRFSZ34 SSS60N sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830

    IRF9Z30

    Abstract: IRF9Z32 a510a RF92
    Text: HE 0 I MflSSMSE Q000b3b 4 | Data Sheet No. PD-9.471A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IO R IRFSZ30 IRFSZ32 P-CHANNEL 5 0 VOLT POWER MOSFETs Features -50 Volt, 0.14 Ohm, HEXFET T0-220AB Plastic Package The HEXFET® technology is the key to International Rectifier’s


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    PDF T0-220AB C-390 IRF9Z30 IRF9Z32 a510a RF92

    IRFS540

    Abstract: IRFS541 irfsz22 IRFS634 irfs630 IRFS522
    Text: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL BVdss V Part Number ID(onXA) RDS(onXß) 14.00 15.00 25.00 30.00 35.00 35.00 0.120 0.100 0.070 0.050 0.035 0.028 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 60.00 14.00 15.00 25.00 30.00 35.00


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    PDF O-220 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 IRFSZ25 IRFSZ24 IRFSZ35 IRFS540 IRFS541 IRFS634 irfs630 IRFS522

    RfZ34

    Abstract: irfsz32 irfsz35
    Text: IRFSZ34/35 IRFSZ30/32 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220F Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF IRFSZ34/35 IRFSZ30/32 O-220F FSZ34/35 IRFSZ34 IRFSZ35 IRFSZ30 IRFSZ32 RfZ34

    250M

    Abstract: IRFSZ30 IRFSZ34
    Text: N-CHANNEL POWER MOSFETS IRFSZ34/30 FEATURES • • • • • • • Lower R ds <on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF IRFSZ34/30 IRFSZ34 IRFSZ30 to-220f 7Tb4142 250M

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


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    PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1