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    IRG4 Price and Stock

    Infineon Technologies AG AUIRG4PH50S

    IGBT 1200V 141A TO247AC
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    DigiKey AUIRG4PH50S Tube 586 1
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    Newark AUIRG4PH50S Bulk 224 1
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    Chip1Stop AUIRG4PH50S Tube 47
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    AUIRG4PH50S 1
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    EBV Elektronik AUIRG4PH50S 15,600 11 Weeks 400
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    New Advantage Corporation AUIRG4PH50S 12,400 1
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    Win Source Electronics AUIRG4PH50S 8,900
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    Infineon Technologies AG IRG4BC30S

    IGBT 600V 34A 100W TO220AB
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    Infineon Technologies AG IRG4IBC20FD

    IGBT 600V 14.3A 34W TO220FP
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    Infineon Technologies AG IRG4BC20SPBF

    IGBT 600V 19A TO220AB
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    Infineon Technologies AG IRG4BC30WPBF

    IGBT 600V 23A 100W TO220AB
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    Find more IRG4 price and stock on Findchips.com

    IRG4 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG4BAC50S International Rectifier IGBT Original PDF
    IRG4BAC50U International Rectifier IGBT Original PDF
    IRG4BAC50W International Rectifier IGBT Original PDF
    IRG4BAC50WPBF International Rectifier TRANS IGBT CHIP N-CH 600V 55A 3TO-273AA Original PDF
    IRG4BC10K International Rectifier Short Circuit Rated UltraFast IGBT Original PDF
    IRG4BC10K International Rectifier 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC10K with Standard Packaging Original PDF
    IRG4BC10K International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRG4BC10KD International Rectifier Short Circuit Rated UltraFast IGBT Original PDF
    IRG4BC10KD International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRG4BC10KD International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package; A IRG4BC10KD with Standard Packaging Original PDF
    IRG4BC10KD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC10KDPbF International Rectifier TRANS IGBT CHIP N-CH 600V 9A 3TO-220AB Original PDF
    IRG4BC10KDPBF International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package; Similar to IRG4BC10KD with Lead Free Packaging Original PDF
    IRG4BC10KPbF International Rectifier TRANS IGBT CHIP N-CH 600V 9A 3TO-220AB Original PDF
    IRG4BC10KPBF International Rectifier 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; Similar to IRG4BC10K with Lead Free Packaging Original PDF
    IRG4BC10S International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4BC10S International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRG4BC10SD International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRG4BC10SD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC10SD-L International Rectifier 600V DC-1 kHz (Standard) Copack IGBT in a TO-262 package; A IRG4BC10SD-L with Standard Packaging Original PDF
    ...

    IRG4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E1789

    Abstract: No abstract text available
    Text: PD - 95173 IRG4BC30WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC30WPbF O-220AB E1789

    IRG4BC20S

    Abstract: 0V39
    Text: PD - 91597A IRG4BC20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 1597A IRG4BC20S O-220AB O-220AB VG252-7105 IRG4BC20S 0V39

    T5 transistor TO-247

    Abstract: IRG4PSC71K
    Text: PD - 91683A IRG4PSC71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for


    Original     		PDF 1683A IRG4PSC71K O-247 O-264, O-247, O-264 T5 transistor TO-247 IRG4PSC71K

    AN-994

    Abstract: IRG4RC10S
    Text: PD - 91732A IRG4RC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low voltage drop; 1.0V typical at 2A, 100°C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    Original     		PDF 1732A IRG4RC10S O-252AA O-252AA AN-994 IRG4RC10S

    IRG4PH50U

    Abstract: TO-247AC Package IRG4PH50U
    Text: PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91574B IRG4PH50U O-247AC O-247AC IRG4PH50U TO-247AC Package IRG4PH50U

    IRG4BC20MD

    Abstract: No abstract text available
    Text: PD -94115 IRG4BC20MD Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery


    Original     		PDF IRG4BC20MD 10kHz O-220AB 10kHz) O-220AB IRG4BC20MD

    IRG4MC50U

    Abstract: No abstract text available
    Text: PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency


    Original     		PDF -94273A IRG4MC50U O-254AA. MIL-PRF-19500 IRG4MC50U

    2A127

    Abstract: AN-994 IRG4RC10K
    Text: PD 91735A IRG4RC10K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency


    Original     		PDF 1735A IRG4RC10K O-252AA O-252AA 2A127 AN-994 IRG4RC10K

    IRG4PC30FD

    Abstract: No abstract text available
    Text: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 91460B IRG4PC30FD O-247AC O-247AC IRG4PC30FD

    IRG4BC20

    Abstract: IRG4BC20KD IRGBC20KD2 IRGBC20MD2 motor IG 2200 19 00001
    Text: PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original     		PDF -91599A IRG4BC20KD O-220AB IRG4BC20 IRG4BC20KD IRGBC20KD2 IRGBC20MD2 motor IG 2200 19 00001

    IRGBC20K-S

    Abstract: IRGBC20M-S AN-994 IRG4BC20K-S
    Text: PD - 91620A IRG4BC20K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF 1620A IRG4BC20K-S IRGBC20K-S IRGBC20M-S AN-994 IRG4BC20K-S

    IRG4PC40F

    Abstract: No abstract text available
    Text: PD 91463B IRG4PC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91463B IRG4PC40F O-247AC O-247AC IRG4PC40F

    IRG4PC60U

    Abstract: No abstract text available
    Text: PD - 94443 IRG4PC60U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast Speed IGBT C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.


    Original     		PDF IRG4PC60U O-247AC O-247AC IRG4PC60U

    AN-994

    Abstract: IRG4BH20K-S
    Text: PD -93960 IRG4BH20K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed


    Original     		PDF IRG4BH20K-S den252-7105 AN-994 IRG4BH20K-S

    IRG4BC20U

    Abstract: IRG4BC20
    Text: PD - 91448D IRG4BC20U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91448D IRG4BC20U O-220AB O-220AB IRG4BC20U IRG4BC20

    IRG4BC30UD

    Abstract: No abstract text available
    Text: PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 91453B IRG4BC30UD O-220AB o52-7105 IRG4BC30UD

    IRG4BC30FD

    Abstract: diode bridge LT 405
    Text: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF -91451B IRG4BC30FD O-220AB IRG4BC30FD diode bridge LT 405

    IRG4PSC71KD

    Abstract: No abstract text available
    Text: PD - 91684A PRELIMINARY IRG4PSC71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for


    Original     		PDF 1684A IRG4PSC71KD O-247 O-264, O-247, IRG4PSC71KD

    AN-994

    Abstract: IRG4BC20SD-S
    Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF IRG4BC20SD-S AN-994 IRG4BC20SD-S

    IRG4PH40UD

    Abstract: IGBTs
    Text: PD- 91621B IRG4PH40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


    Original     		PDF 91621B IRG4PH40UD O-247AC IRG4PH40UD IGBTs

    IRG4PC50U

    Abstract: IRG4PC50
    Text: PD 91470F IRG4PC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91470F IRG4PC50U O-247AC O-247AC IRG4PC50U IRG4PC50

    IRG4PH20K

    Abstract: 720v
    Text: PD -91776 IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed


    Original     		PDF IRG4PH20K O-247ters IRG4PH20K 720v

    AN-994

    Abstract: IRG4PC60U-P power supply for igbt driver to247 pcb footprint
    Text: PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and >200 kHz in resonant mode. • Application in UPS, Welding and High Current power


    Original     		PDF IRG4PC60U-P O-247AC O-247 AN-994 IRG4PC60U-P power supply for igbt driver to247 pcb footprint

    IRG4PC50S-P

    Abstract: IRG4PC50S IRG4PC50
    Text: PD - 91581B IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91581B IRG4PC50S-P O-247AC O-247 IRG4PC50S-P IRG4PC50S IRG4PC50