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    IRG4BC Price and Stock

    Rochester Electronics LLC AUIRG4BC30S-S

    IGBT
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    DigiKey AUIRG4BC30S-S Bulk 23,755 182
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    AUIRG4BC30S-S Bulk 700 182
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    Rochester Electronics LLC IRG4BC20SD-SPBF

    IGBT, 19A I(C), 600V V(BR)CES, N
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    DigiKey IRG4BC20SD-SPBF Bulk 10,300 263
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    Rochester Electronics LLC IRG4BC30F-SPBF

    IGBT 31A, 600V, N CHANNEL
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    DigiKey IRG4BC30F-SPBF Bulk 8,350 226
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    IRG4BC30F-SPBF Bulk 324 226
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    Rochester Electronics LLC AUIRG4BC30USTRL

    IGBT, 23A I(C), 600V V(BR)CES, N
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    DigiKey AUIRG4BC30USTRL Bulk 6,690 182
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    Rochester Electronics LLC IRG4BC20WPBF

    IGBT 600V 13A TO220AB
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    DigiKey IRG4BC20WPBF Tube 6,500 335
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    Find more IRG4BC price and stock on Findchips.com

    IRG4BC Datasheets (327)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG4BC10K International Rectifier Short Circuit Rated UltraFast IGBT Original PDF
    IRG4BC10K International Rectifier 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC10K with Standard Packaging Original PDF
    IRG4BC10K International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRG4BC10KD International Rectifier Short Circuit Rated UltraFast IGBT Original PDF
    IRG4BC10KD International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRG4BC10KD International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package; A IRG4BC10KD with Standard Packaging Original PDF
    IRG4BC10KD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC10KDPbF International Rectifier TRANS IGBT CHIP N-CH 600V 9A 3TO-220AB Original PDF
    IRG4BC10KDPBF International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package; Similar to IRG4BC10KD with Lead Free Packaging Original PDF
    IRG4BC10KPbF International Rectifier TRANS IGBT CHIP N-CH 600V 9A 3TO-220AB Original PDF
    IRG4BC10KPBF International Rectifier 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; Similar to IRG4BC10K with Lead Free Packaging Original PDF
    IRG4BC10S International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4BC10S International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRG4BC10SD International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRG4BC10SD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC10SD-L International Rectifier 600V DC-1 kHz (Standard) Copack IGBT in a TO-262 package; A IRG4BC10SD-L with Standard Packaging Original PDF
    IRG4BC10SD-L International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC10SD-LPBF International Rectifier 600V DC-1 kHz (Standard) Copack IGBT in a TO-262 package; Similar to IRG4BC10SD-L with Lead Free Packaging Original PDF
    IRG4BC10SD-LPbF International Rectifier TRANS IGBT CHIP N-CH 600V 14A 3TO-262 Original PDF
    IRG4BC10SDPbF International Rectifier TRANS IGBT CHIP N-CH 600V 14A 3TO-220AB Original PDF
    ...

    IRG4BC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E1789

    Abstract: No abstract text available
    Text: PD - 95173 IRG4BC30WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC30WPbF O-220AB E1789

    IRG4BC20S

    Abstract: 0V39
    Text: PD - 91597A IRG4BC20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 1597A IRG4BC20S O-220AB O-220AB VG252-7105 IRG4BC20S 0V39

    IRG4BC20MD

    Abstract: No abstract text available
    Text: PD -94115 IRG4BC20MD Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery


    Original     		PDF IRG4BC20MD 10kHz O-220AB 10kHz) O-220AB IRG4BC20MD

    IRG4BC20

    Abstract: IRG4BC20KD IRGBC20KD2 IRGBC20MD2 motor IG 2200 19 00001
    Text: PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original     		PDF -91599A IRG4BC20KD O-220AB IRG4BC20 IRG4BC20KD IRGBC20KD2 IRGBC20MD2 motor IG 2200 19 00001

    IRGBC20K-S

    Abstract: IRGBC20M-S AN-994 IRG4BC20K-S
    Text: PD - 91620A IRG4BC20K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF 1620A IRG4BC20K-S IRGBC20K-S IRGBC20M-S AN-994 IRG4BC20K-S

    IRG4BC20U

    Abstract: IRG4BC20
    Text: PD - 91448D IRG4BC20U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91448D IRG4BC20U O-220AB O-220AB IRG4BC20U IRG4BC20

    IRG4BC30UD

    Abstract: No abstract text available
    Text: PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 91453B IRG4BC30UD O-220AB o52-7105 IRG4BC30UD

    IRG4BC30FD

    Abstract: diode bridge LT 405
    Text: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF -91451B IRG4BC30FD O-220AB IRG4BC30FD diode bridge LT 405

    AN-994

    Abstract: IRG4BC20SD-S
    Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF IRG4BC20SD-S AN-994 IRG4BC20SD-S

    AN-994

    Abstract: IRG4BC15UD-L IRG4BC15UD-S
    Text: PD - 94083A IRG4BC15UD-S IRG4BC15UD-L INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT C Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery


    Original     		PDF 4083A IRG4BC15UD-S IRG4BC15UD-L from10 O-262 AN-994. AN-994 IRG4BC15UD-L IRG4BC15UD-S

    AN-994

    Abstract: IRGBC20KD2-S IRGBC20MD2-S
    Text: PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20KD-SPbF EIA-418. AN-994 IRGBC20KD2-S IRGBC20MD2-S

    Untitled

    Abstract: No abstract text available
    Text: PD - 95429A IRG4BC40WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter


    Original     		PDF 5429A IRG4BC40WPbF 150KHz 4BC40WPbF O-220AB

    AN-994

    Abstract: No abstract text available
    Text: PD - 95693A IRG4BC30W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 5693A IRG4BC30W-SPbF 150W57) EIA-418. AN-994

    3000 0442

    Abstract: No abstract text available
    Text: PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 95788B IRG4BC40WSPbF IRG4BC40WLPbF EIA-418. 3000 0442

    AN-994

    Abstract: IRG4BC20SD-S irg4bc
    Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF IRG4BC20SD-S AN-994 IRG4BC20SD-S irg4bc

    motor IG 2200 19 X 000 15 R

    Abstract: AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S
    Text: PD -91594C IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -91594C IRG4BC30KD-S motor IG 2200 19 X 000 15 R AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S

    IRG4BC40W

    Abstract: irg4bc40 354 GE
    Text: PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 1654A IRG4BC40W IRG4BC40W irg4bc40 354 GE

    AN-994

    Abstract: IRG4BC20FD-S
    Text: PD -91783A IRG4BC20FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF -91783A IRG4BC20FD-S optimize20 AN-994 IRG4BC20FD-S

    transistor IR 840

    Abstract: OZ930
    Text: International ZOR Rectifier PD 9.1449A IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    OCR Scan     		PDF IRG4BC20UD T0220AB transistor IR 840 OZ930

    Untitled

    Abstract: No abstract text available
    Text: International Iö R Rectifier PD 9.1451A IRG4BC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .


    OCR Scan     		PDF IRG4BC30FD O-220AB conT0-220AB

    Untitled

    Abstract: No abstract text available
    Text: International I R Rectifier pd-9.h52d IRG4BC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC30U

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1601 International IQR Rectifier IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .


    OCR Scan     		PDF IRG4BC20FD O-22QAB

    Untitled

    Abstract: No abstract text available
    Text: PD - 9 .1 4 5 5 A International I R Rectifier IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • S ta n d a rd : O p tim ize d fo r m in im u m saturation Vces = 600V v o lta g e an d low operating fre q u e n c ie s < 1 kH z


    OCR Scan     		PDF IRG4BC40S

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1448C International IOR Rectifier IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF 1448C IRG4BC20U TQ-220AB 002flb45