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    IRG4BC30F Search Results

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    IRG4BC30F Price and Stock

    Rochester Electronics LLC IRG4BC30F-SPBF

    IGBT 31A, 600V, N CHANNEL
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    DigiKey IRG4BC30F-SPBF Bulk 8,350 226
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    IRG4BC30F-SPBF Bulk 324 226
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    Rochester Electronics LLC IRG4BC30FD1PBF

    IGBT, 31A I(C), 600V V(BR)CES, N
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    DigiKey IRG4BC30FD1PBF Bulk 750 158
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    IRG4BC30FD1PBF Tube 210 210
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    Infineon Technologies AG IRG4BC30F

    IGBT 600V 31A 100W TO220AB
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    DigiKey IRG4BC30F Tube 300
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    Infineon Technologies AG IRG4BC30FD1

    IGBT 600V 31A 100W TO220AB
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    Infineon Technologies AG IRG4BC30F-S

    IGBT 600V 31A 100W D2PAK
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    DigiKey IRG4BC30F-S Tube 150
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    IRG4BC30F Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG4BC30F International Rectifier Fast Speed IGBT Original PDF
    IRG4BC30F International Rectifier 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30F with Standard Packaging Original PDF
    IRG4BC30F International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4BC30FD International Rectifier 600V Fast 1-8 kHz Copack IGBT in a TO-220AB package; A IRG4BC30FD with Standard Packaging Original PDF
    IRG4BC30FD International Rectifier IRGP440UD2 Original PDF
    IRG4BC30FD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC30FD1 International Rectifier 600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package>20kHz resonant mode; A IRG4BC30FD1 with Standard Packaging Original PDF
    IRG4BC30FD1 International Rectifier 600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode Original PDF
    IRG4BC30FD1 International Rectifier 600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode Original PDF
    IRG4BC30FD1PbF International Rectifier TRANS IGBT CHIP N-CH 600V 31A 3TO-220AB Original PDF
    IRG4BC30FD1PBF International Rectifier 600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package>20kHz resonant mode; Similar to IRG4BC30FD1 with Lead Free Packaging Original PDF
    IRG4BC30FDPbF International Rectifier TRANS IGBT CHIP N-CH 600V 31A 3TO-220AB Original PDF
    IRG4BC30FDPBF International Rectifier 600V Fast 1-8 kHz Copack IGBT in a TO-220AB package; Similar to IRG4BC30FD with Lead Free Packaging Original PDF
    IRG4BC30FD-S International Rectifier TRANS IGBT CHIP N-CH 600V 31A 3D2-PAK Original PDF
    IRG4BC30FD-S International Rectifier 600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; A IRG4BC30FD-S with Standard Packaging Original PDF
    IRG4BC30FD-SPbF International Rectifier TRANS IGBT CHIP N-CH 600V 31A 3D2-PAK Original PDF
    IRG4BC30FD-SPBF International Rectifier 600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; Similar to IRG4BC30FD-S with Lead Free Packaging Original PDF
    IRG4BC30FD-STRR International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 31A 100W D2PAK Original PDF
    IRG4BC30FDSTRRP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 31A 100W D2PAK Original PDF
    IRG4BC30FPBF International Rectifier Original PDF

    IRG4BC30F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRG4BC30FD

    Abstract: diode bridge LT 405
    Text: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF -91451B IRG4BC30FD O-220AB IRG4BC30FD diode bridge LT 405

    Untitled

    Abstract: No abstract text available
    Text: PD -95651A IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF -95651A IRG4BC30FPbF O-220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 95970A IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 5970A IRG4BC30FD-SPbF 20kHz EIA-418.

    IRG4BC30FD

    Abstract: No abstract text available
    Text: PD 9.1451A IRG4BC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD O-220AB IRG4BC30FD

    IRF1010 E DATASHEET

    Abstract: IRF1010 IRG4BC30FD1 igbt rectifier circuit IRG4BC
    Text: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1 20kHz O-220AB char10 FD100H06A5. O-220 IRF1010 E DATASHEET IRF1010 IRG4BC30FD1 igbt rectifier circuit IRG4BC

    VG 96929

    Abstract: IC IGBT fast irf transistor IRF 250 IRG4BC30FD-S 6000UF ir igbt IRg4bc30
    Text: PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD-S 20kHz VG 96929 IC IGBT fast irf transistor IRF 250 IRG4BC30FD-S 6000UF ir igbt IRg4bc30

    Untitled

    Abstract: No abstract text available
    Text: IGBT ТРАНЗИСТОРЫ Наименование HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 HGTP3N60B3 HGTP7N60B3 HGTP7N60B3D IRG4BC20UD IRG4BC30F IRG4BC30U IRG4BC30UD


    Original     		PDF HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3

    swiching transistor

    Abstract: 9561 600v 8A ultra fast recovery diode to220
    Text: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1PbF 20kHz O-220AB Minimi10 FD100H06A5. O-220 swiching transistor 9561 600v 8A ultra fast recovery diode to220

    Untitled

    Abstract: No abstract text available
    Text: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 5614A IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5.

    Untitled

    Abstract: No abstract text available
    Text: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1 20kHz O-220AB FD100H06A5. O-220

    Untitled

    Abstract: No abstract text available
    Text: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF -91451B IRG4BC30FD O-220AB

    IRF1010

    Abstract: IRG4BC30FD1 TO220AB IGBT
    Text: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1 20kHz O-220AB FD100H06A5. O-220 IRF1010 IRG4BC30FD1 TO220AB IGBT

    Untitled

    Abstract: No abstract text available
    Text: PD -95651A IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF -95651A IRG4BC30FPbF O-220AB O-220AB TC4BC30FPbF

    IRG4BC30FD

    Abstract: fl 014
    Text: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF -91451B IRG4BC30FD O-220AB IRG4BC30FD fl 014

    IRG4BC30F

    Abstract: 555 triangular wave
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1450 IRG4BC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30F O-220AB O-220AB IRG4BC30F 555 triangular wave

    Untitled

    Abstract: No abstract text available
    Text: PD -95651 IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC30FPbF O-220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 95970A IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 5970A IRG4BC30FD-SPbF 20kHz

    555 triangular wave

    Abstract: IRG4BC30FD1PBF
    Text: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5. O-220 555 triangular wave IRG4BC30FD1PBF

    Untitled

    Abstract: No abstract text available
    Text: PD -95651 IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC30FPbF O-220AB O-220AB TC037) O-220AB.

    IRF530S

    Abstract: bridge rectifier 200a irg4bc30fd-s
    Text: PD - 95970 IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD-SPbF 20kHz IRF530S bridge rectifier 200a irg4bc30fd-s

    Untitled

    Abstract: No abstract text available
    Text: International Iö R Rectifier PD 9.1451A IRG4BC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .


    OCR Scan     		PDF IRG4BC30FD O-220AB conT0-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1451A International IOR Rectifier IRG4BC30FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .


    OCR Scan     		PDF IRG4BC30FD T0-220AB 5SM52

    Untitled

    Abstract: No abstract text available
    Text: PD - 9 .1 4 5 0 A International I R Rectifier IRG4BC30F P R ELIM IN A R Y Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC30F O-220AB

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier pd-o.usqa IRG4BC30F PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT F eatures • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC30F T0220AB