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    Infineon Technologies AG IRG7PH30K10PBF

    IGBT 1200V 33A 210W TO247AC
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    DigiKey IRG7PH30K10PBF Tube
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    International Rectifier IRG7PH30K10PBF

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    Bristol Electronics IRG7PH30K10PBF 50
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    Quest Components IRG7PH30K10PBF 40
    • 1 $4.704
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    Renesas Electronics Corporation IRG7PH30K10PBF

    INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
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    ComSIT USA IRG7PH30K10PBF 200
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    IRG7PH30K10PBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7PH30K10PBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 33A 210W TO247AC Original PDF

    IRG7PH30K10PBF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ice 265

    Abstract: ICE200 TR4032
    Text: PD - 96156A IRG7PH30K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA 100% of the parts tested for ILM


    Original     		6156A IRG7PH30K10PbF O-247AC ice 265 ICE200 TR4032 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96156A IRG7PH30K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA 100% of the parts tested for ILM


    Original     		6156A IRG7PH30K10PbF O-247AC PDF

    for IR IGBT die

    Abstract: IRG7CH30K10B IRG7PH30K10 IRG7CH
    Text: PD - 97135A IRG7CH30K10B IRG7CH30K10B IGBT Die in Wafer Form Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 S short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Co-Efficient


    Original     		7135A IRG7CH30K10B IRG7CH30K10B 150mm O-247 AN-1086 for IR IGBT die IRG7PH30K10 IRG7CH PDF