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    IRG7PH46UPBF Price and Stock

    Rochester Electronics LLC IRG7PH46UPBF

    IGBT TRENCH 1200V 130A TO-247AC
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    DigiKey IRG7PH46UPBF Tube 59 59
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    Infineon Technologies AG IRG7PH46UPBF

    IGBT TRENCH 1200V 130A TO-247AC
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    Rochester Electronics IRG7PH46UPBF 59 1
    • 1 $4.88
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    International Rectifier IRG7PH46UPBF

    INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 117A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
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    ComSIT USA IRG7PH46UPBF 50
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    IRG7PH46UPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7PH46UPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 130A 469W TO247AC Original PDF

    IRG7PH46UPBF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    irg7ph46

    Abstract: 600v 20a IGBT driver tr marking code 25h irg7ph46uep marking code 117A IRG7PH46UPBF 8200 T igbt driver applications
    Text: PD - 96305A IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		6305A IRG7PH46UPbF IRG7PH46U-EP O-247AC O-247AD IRG7PH46NE irg7ph46 600v 20a IGBT driver tr marking code 25h irg7ph46uep marking code 117A 8200 T igbt driver applications PDF

    IRG7PH46UPBF

    Abstract: 600v 20a IGBT driver ir igbt 1200V 40A 96305 igbt 40A 600V C-150 9630
    Text: PD - 96305 IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		IRG7PH46UPbF IRG7PH46U-EP O-247AD IRG7PH46UPBF 600v 20a IGBT driver ir igbt 1200V 40A 96305 igbt 40A 600V C-150 9630 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96305A IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		6305A IRG7PH46UPbF IRG7PH46U-EP O-247AD PDF