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    IRGBC30 Price and Stock

    Infineon Technologies AG IRGBC30F

    IGBT FAST 600V 31A TO-220AB
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    Infineon Technologies AG IRGBC30S

    IGBT STD 600V 34A TO-220AB
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    Infineon Technologies AG IRGBC30U

    IGBT UFAST 600V 23A TO-220AB
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    Infineon Technologies AG IRGBC30FD2

    IGBT W/DIODE 600V 31A TO-220AB
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    Infineon Technologies AG IRGBC30UD2

    IGBT W/DIODE 600V 23A TO-220AB
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    Find more IRGBC30 price and stock on Findchips.com

    IRGBC30 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGBC30 International Rectifier INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Original PDF
    IRGBC30F International Rectifier Fast Speed IGBT Original PDF
    IRGBC30F International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGBC30F Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRGBC30FD2 International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY Original PDF
    IRGBC30FD2 International Rectifier Fast CoPack IGBT Original PDF
    IRGBC30FD2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRGBC30FD2-S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRGBC30K International Rectifier Short Circuit Rated UltraFast IGBT Original PDF
    IRGBC30K International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGBC30K Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRGBC30KD2 International Rectifier IGBT Original PDF
    IRGBC30KD2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRGBC30KD2-S International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRGBC30KD2-S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRGBC30K-S International Rectifier Short Circuit Rated UltraFast Fast IGBT Original PDF
    IRGBC30K-S International Rectifier IGBT Original PDF
    IRGBC30M International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGBC30M International Rectifier Short Circuit Rated Fast IGBT Original PDF
    IRGBC30M Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRGBC30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LTA 702 N

    Abstract: C702 diode C703 diode diode c706 transistor c708 C706 diode DIODE C705 C705 diode transistor ge 703 IRGBC30UD2
    Text: PD - 9.796A IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGBC30UD2 O-220AB C-708 LTA 702 N C702 diode C703 diode diode c706 transistor c708 C706 diode DIODE C705 C705 diode transistor ge 703 IRGBC30UD2

    ASE 12 66

    Abstract: irgbc30s D-12 M 007 18A
    Text: PD - 9.688A IRGBC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency Curve VCES = 600V VCE(sat) ≤ 2.2V


    Original     		PDF IRGBC30S O-220AB ASE 12 66 irgbc30s D-12 M 007 18A

    D-12

    Abstract: IRGBC30U mosfet 600v 10a to-220ab
    Text: PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V


    Original     		PDF IRGBC30U O-220AB C-662 D-12 IRGBC30U mosfet 600v 10a to-220ab

    D-12

    Abstract: IRGBC30U
    Text: PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V


    Original     		PDF IRGBC30U O-220AB C-662 D-12 IRGBC30U

    transistor c307

    Abstract: C311 Transistor transistor c308 C-311 D-12 IRGBC30M
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1072 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    Original     		PDF IRGBC30M 10kHz) O-220AB C-312 transistor c307 C311 Transistor transistor c308 C-311 D-12 IRGBC30M

    C-865

    Abstract: smd C865 AN-994 D-12 IRGBC30K-S SMD-220 C865 C863
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1132 IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGBC30K-S SMD-220 C-866 C-865 smd C865 AN-994 D-12 IRGBC30K-S SMD-220 C865 C863

    transistor c708

    Abstract: LTA 702 N C702 diode C706 diode diode c706 IRGBC30UD2 c705
    Text: Previous Datasheet Index Next Data Sheet PD - 9.796A IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes


    Original     		PDF IRGBC30UD2 O-220AB C-708 transistor c708 LTA 702 N C702 diode C706 diode diode c706 IRGBC30UD2 c705

    IRGBC30F

    Abstract: D-12 IRGBC30
    Text: PD - 9.689A IRGBC30F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.1V


    Original     		PDF IRGBC30F 10kHz) O-220AB IRGBC30F D-12 IRGBC30

    c103 a ge

    Abstract: C-107 C-108 IRGBC30FD2
    Text: PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    Original     		PDF IRGBC30FD2 10kHz) O-220AB C-108 c103 a ge C-107 C-108 IRGBC30FD2

    TRANSISTOR C307

    Abstract: C-311 D-12 IRGBC30M ac power control applications 400v 16a C311 Transistor
    Text: PD - 9.1072 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGBC30M 10kHz) O-220AB C-312 TRANSISTOR C307 C-311 D-12 IRGBC30M ac power control applications 400v 16a C311 Transistor

    GC smd transistor

    Abstract: AN-994 IRGBC30M-S SMD-220 IC25C
    Text: PD - 9.1133 IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGBC30M-S 10kHz) GC smd transistor AN-994 IRGBC30M-S SMD-220 IC25C

    D-12

    Abstract: IRGBC30U
    Text: PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V


    Original     		PDF IRGBC30U O-220AB C-662 D-12 IRGBC30U

    D-12

    Abstract: IRGBC30S pec 820
    Text: PD - 9.688A IRGBC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency Curve VCES = 600V VCE(sat) ≤ 2.2V


    Original     		PDF IRGBC30S O-220AB D-12 IRGBC30S pec 820

    transistor c373

    Abstract: c380 transistor transistor c375 transistor c380 o transistor c380 AN-994 IRGBC30MD2-S SMD-220 C380 ge Tx/c380 transistor
    Text: PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		PDF IRGBC30MD2-S 10kHz) SMD-220 C-380 transistor c373 c380 transistor transistor c375 transistor c380 o transistor c380 AN-994 IRGBC30MD2-S SMD-220 C380 ge Tx/c380 transistor

    c845

    Abstract: c845 TO 92 D-12 IRGBC30K C844 c847 C-844 DC MOTOR CONTROL IGBT
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGBC30K O-220AB C-848 c845 c845 TO 92 D-12 IRGBC30K C844 c847 C-844 DC MOTOR CONTROL IGBT

    transistor c905

    Abstract: No abstract text available
    Text: P D - 9.1107 International Rectifier IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • V c es = 6 0 0 V Short circuit rated -1 Ops @125°C, VGe = 15V Switching-loss rating includes all "tail" losses


    OCR Scan     		PDF IRGBC30KD2 C-911 S5452 TQ-220AB C-912 transistor c905

    transistor c925

    Abstract: DIODE C921
    Text: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses


    OCR Scan     		PDF IRGBC30KD2-S -10ns D020717 SMD-220 C-928 transistor c925 DIODE C921

    transistor c905

    Abstract: LE C906 c912 c906 transistor
    Text: P D - 9.1107 Iitemational S Rectifier IRGBC30KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10ps @125°C, VGE= 15V • Switching-loss rating includes all "tail" losses


    OCR Scan     		PDF -10ps IRGBC30KD2 O-22QAB C-912 transistor c905 LE C906 c912 c906 transistor

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.688A International io r i Rectifier IRGBC30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency Curve


    OCR Scan     		PDF IRGBC30S O-220AB TQ-220AB S54S2

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.682A International M l Rectifier IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses V ces = • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency cun/e


    OCR Scan     		PDF IRGBC30U O-220AB 5S452 0G204S1 TQ-220AB

    VQE 23D

    Abstract: C668 transistor CQGS 100C IRGBC30U
    Text: International ¡»¡»IRectifier PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast 1GBT Features c • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF IRGBC30U C-661 12-Turn-Off TQ-220AB VQE 23D C668 transistor CQGS 100C

    IRGBC30S

    Abstract: D-12
    Text: PD - 9.688A international IM Î Rectifier IRGBC30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed ÍGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400 Hz See Rg. 1 for Current vs. Frequency Curve


    OCR Scan     		PDF IRGBC30S O-220AB D-12

    transistor c342

    Abstract: LE C346 c342
    Text: P D -9.1133 International IMI Rectifier IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • Short circuit rated - 1 0ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    OCR Scan     		PDF 10kHz) IRGBC30M-S SMD-220 C-346 transistor c342 LE C346 c342

    C311 Transistor

    Abstract: TRANSISTOR C309 transistor c308 c309 transistor
    Text: P D - 9.1072 bitemational jorJRectifier IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to


    OCR Scan     		PDF 10kHz) IRGBC30M C-311 TQ-220AB C-312 C311 Transistor TRANSISTOR C309 transistor c308 c309 transistor