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    IRGBC30M Search Results

    IRGBC30M Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGBC30M International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGBC30M International Rectifier Short Circuit Rated Fast IGBT Original PDF
    IRGBC30M Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRGBC30MD2 International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRGBC30MD2 International Rectifier Short Circuit Rated Fast Copack IGBT Original PDF
    IRGBC30MD2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRGBC30MD2-S International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRGBC30MD2-S International Rectifier Short Circuit Rated Fast CoPack IGBT Original PDF
    IRGBC30MD2-S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRGBC30M-S International Rectifier Short Circuit Rated Fast IGBT Original PDF
    IRGBC30M-S International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF

    IRGBC30M Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor c307

    Abstract: C311 Transistor transistor c308 C-311 D-12 IRGBC30M
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1072 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    Original     		IRGBC30M 10kHz) O-220AB C-312 transistor c307 C311 Transistor transistor c308 C-311 D-12 IRGBC30M PDF

    TRANSISTOR C307

    Abstract: C-311 D-12 IRGBC30M ac power control applications 400v 16a C311 Transistor
    Text: PD - 9.1072 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    Original     		IRGBC30M 10kHz) O-220AB C-312 TRANSISTOR C307 C-311 D-12 IRGBC30M ac power control applications 400v 16a C311 Transistor PDF

    GC smd transistor

    Abstract: AN-994 IRGBC30M-S SMD-220 IC25C
    Text: PD - 9.1133 IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    Original     		IRGBC30M-S 10kHz) GC smd transistor AN-994 IRGBC30M-S SMD-220 IC25C PDF

    transistor c373

    Abstract: c380 transistor transistor c375 transistor c380 o transistor c380 AN-994 IRGBC30MD2-S SMD-220 C380 ge Tx/c380 transistor
    Text: PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		IRGBC30MD2-S 10kHz) SMD-220 C-380 transistor c373 c380 transistor transistor c375 transistor c380 o transistor c380 AN-994 IRGBC30MD2-S SMD-220 C380 ge Tx/c380 transistor PDF

    transistor c373

    Abstract: c380 transistor transistor c375 transistor c380 transistor c380 o AN-994 IRGBC30MD2-S SMD-220 transistor c374 C374
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		IRGBC30MD2-S 10kHz) SMD-220 C-380 transistor c373 c380 transistor transistor c375 transistor c380 transistor c380 o AN-994 IRGBC30MD2-S SMD-220 transistor c374 C374 PDF

    transistor c342

    Abstract: LE C346 c342
    Text: P D -9.1133 International IMI Rectifier IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • Short circuit rated - 1 0ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    OCR Scan     		10kHz) IRGBC30M-S SMD-220 C-346 transistor c342 LE C346 c342 PDF

    C311 Transistor

    Abstract: TRANSISTOR C309 transistor c308 c309 transistor
    Text: P D - 9.1072 bitemational jorJRectifier IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to


    OCR Scan     		10kHz) IRGBC30M C-311 TQ-220AB C-312 C311 Transistor TRANSISTOR C309 transistor c308 c309 transistor PDF

    transistor c374

    Abstract: transistor c373 transistor c377
    Text: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses


    OCR Scan     		IRGBC30MD2-S 10kHz) high-volta379 SMD-220 C-380 transistor c374 transistor c373 transistor c377 PDF

    TRANSISTOR C307

    Abstract: transistor c308
    Text: International IK» 1Rectifier P D - 9 .1 0 7 2 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    OCR Scan     		IRGBC30M 10kHz) C-311 O-22QAB C-312 0201G2 TRANSISTOR C307 transistor c308 PDF

    IRGBC30MD2

    Abstract: No abstract text available
    Text: PD - 9.1108 IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		IRGBC30MD2 10kHz) O-220AB C-364 IRGBC30MD2 PDF

    IRGBC30MD2

    Abstract: No abstract text available
    Text: PD - 9.1108 IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		IRGBC30MD2 10kHz) O-220AB C-364 IRGBC30MD2 PDF

    TRANSISTOR C307

    Abstract: C311 Transistor ac power control applications 400v 16a C-311 D-12 IRGBC30M c307 mosfet c309
    Text: PD - 9.1072 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    Original     		IRGBC30M 10kHz) O-220AB C-312 TRANSISTOR C307 C311 Transistor ac power control applications 400v 16a C-311 D-12 IRGBC30M c307 mosfet c309 PDF

    Untitled

    Abstract: No abstract text available
    Text: International P D - 9.1108 ioR Rectifier IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 6 0 0 V Short circuit rated -10ps @125°C, VGE = 15V Switching-loss rating includes all "tail" losses


    OCR Scan     		IRGBC30MD2 -10ps 10kHz) TQ-220AB C-364 55M52 PDF

    LE C346

    Abstract: No abstract text available
    Text: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    OCR Scan     		IRGBC30M-S 10kHz) SMD-220 C-346 4flS54S2 002013b LE C346 PDF

    Untitled

    Abstract: No abstract text available
    Text: P D - 9.1108 bitemational I»»]Rectifier IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600V •Short circuit rated -10ps @ 125°C, V Ge = 15V ’ Switching-loss rating includes all "tail" losses


    OCR Scan     		-10ps 10kHz) IRGBC30MD2 C-363 O-22QAB C-364 PDF

    transistor c345

    Abstract: transistor c343 smd c345 transistor c342 g10 smd transistor AN-994 D-12 IRGBC30M-S SMD-220 ic smd 342
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1133 IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    Original     		IRGBC30M-S 10kHz) SMD-220 C-346 transistor c345 transistor c343 smd c345 transistor c342 g10 smd transistor AN-994 D-12 IRGBC30M-S SMD-220 ic smd 342 PDF

    IRGBC30MD2

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1108 IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		IRGBC30MD2 10kHz) O-220AB C-364 IRGBC30MD2 PDF

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
    Text: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U


    Original     		IRGB420U IRGP420U IRGB430U IRGP430U IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGKI200F06 IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06 PDF

    motor IG 2200 19 X 000 15 R

    Abstract: AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S
    Text: PD -91594C IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		-91594C IRG4BC30KD-S motor IG 2200 19 X 000 15 R AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S PDF

    ic c 838

    Abstract: IRG4PC30KD IRGBC30KD2 IRGBC30MD2
    Text: PD -91587A IRG4PC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		-91587A IRG4PC30KD ic c 838 IRG4PC30KD IRGBC30KD2 IRGBC30MD2 PDF

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103 PDF

    TRANSISTOR 9642

    Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


    Original     		T0247 T0220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U TRANSISTOR 9642 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U PDF

    HF20A060ACE

    Abstract: IRGBC30MD2
    Text: Preliminary Data Sheet PD-20600 rev. B 11/98 HF20A060ACE Hexfred Die in Wafer Form 600 V Size 20 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original     		PD-20600 HF20A060ACE 125mm, IRGBC30MD2 HF20A060ACE IRGBC30MD2 PDF

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
    Text: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications


    Original     		O-220AB IRG4BC40S IRGBC20S IRGBC30S IRGBC40S O-247AC IRG4PC40S IRGPC30S IRGPC40S 10-30kHz) IRGKI200F06 IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06 PDF