IRGBC30F
Abstract: IRGCC30FE
Text: PD-9.1430 TARGET IRGCC30FE IRGCC30FE IGBT Die in Wafer Form C 600 V Size 3 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
|
Original
|
PDF
|
IRGCC30FE
IRGCC30FE
IRGBC30F
IRGBC30F
|
IRGBC30F
Abstract: IRGCC30FE
Text: Previous Datasheet Index Next Data Sheet PD-9.1430 TARGET IRGCC30FE IRGCC30FE IGBT Die in Wafer Form C 600 V Size 3 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
|
Original
|
PDF
|
IRGCC30FE
IRGCC30FE
IRGBC30F
IRGBC30F
|
Untitled
Abstract: No abstract text available
Text: PD-9.1430 International lö R Rectifier IRGCC30FE TARGET IRGCC30FE IGBT Die in Wafer Form 600 V Size 3 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M a x ) V c E (o n ) P a ra m e te r Collector-to-Em itter Saturation Voltage
|
OCR Scan
|
PDF
|
IRGCC30FE
IRGCC30FE
|