IRHM7360SE
Abstract: JANSR2N7391
Text: Provisional Data Sheet No. PD-9.1224A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHM7360SE JANSR2N7391 [REF:MIL-PRF-195000/TBD] N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 400 Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology
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IRHM7360SE
JANSR2N7391
MIL-PRF-195000/TBD]
IRHM7360SE
JANSR2N7391
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IRHM7360SE
Abstract: No abstract text available
Text: PD - 91224C IRHM7360SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test
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91224C
IRHM7360SE
400Volt,
IRHM7360SE
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IRHm7360SE
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1224B IRHM7360SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD
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1224B
IRHM7360SE
400Volt,
IRHm7360SE
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Untitled
Abstract: No abstract text available
Text: IRHM7360U Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)22 I(DM) Max. (A) Pulsed I(D)14 @Temp (øC)100 IDM Max (@25øC Amb)250 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55
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IRHM7360U
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Untitled
Abstract: No abstract text available
Text: PD - 91224D IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 22A QPL Part Number
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91224D
IRHM7360SE
JANSR2N7391
MIL-PRF-19500/661
O-254AA)
IRHM57163SED
IRHM57163SEU
MIL-PRF-19500
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TO-254
Abstract: 91224D IRHM7360SE JANSR2N7391
Text: PD - 91224D IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 22A QPL Part Number
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91224D
IRHM7360SE
JANSR2N7391
MIL-PRF-19500/661
O-254AA)
IRHM57163SED
IRHM57163SEU
MIL-PRF-19500
TO-254
91224D
IRHM7360SE
JANSR2N7391
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Untitled
Abstract: No abstract text available
Text: IRHM7360 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)22 I(DM) Max. (A) Pulsed I(D)14 @Temp (øC)100 IDM Max (@25øC Amb)250 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55
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IRHM7360
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Untitled
Abstract: No abstract text available
Text: IRHM7360D Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)22 I(DM) Max. (A) Pulsed I(D)14 @Temp (øC)100 IDM Max (@25øC Amb)250 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55
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IRHM7360D
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IRHM8230
Abstract: IRHM8360 IRHM7230 IRHM7360
Text: PD - 90823A IRHM7360 IRHM8360 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 400Volt, 0.22Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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0823A
IRHM7360
IRHM8360
400Volt,
1x106
IRHM8230
IRHM8360
IRHM7230
IRHM7360
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Untitled
Abstract: No abstract text available
Text: PD-91224E RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID QPL Part Number
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PD-91224E
O-254AA)
IRHM7360SE
JANSR2N7391
MIL-PRF-19500/661
O-254AA
applicatio54AA.
MIL-PRF-19500
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IRHM7360SE
Abstract: JANSR2N7391
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1224A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHM7360SE JANSR2N7391 [REF:MIL-PRF-195000/TBD] N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET
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IRHM7360SE
JANSR2N7391
MIL-PRF-195000/TBD]
IRHM7360SE
JANSR2N7391
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Untitled
Abstract: No abstract text available
Text: IRHM7360SE Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)22# I(DM) Max. (A) Pulsed I(D)14 @Temp (øC)100# IDM Max (@25øC Amb)88 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250# Minimum Operating Temp (øC)-55õ
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IRHM7360SE
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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Untitled
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. MIL-PRF-19500/661D 17 April 2013 SUPERSEDING MIL-PRF-19500/661C 7 August 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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MIL-PRF-19500/661D
MIL-PRF-19500/661C
2N7444,
2N7434,
2N7391,
2N7392,
MIL-PRF-19500.
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irf5n5210sc
Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)
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4246A
IRHG567110
MO-036AB)
IRHG563110
MO-036AB
O-254AA
22JGQ045SCV
irf5n5210sc
IRHNA57064SCS
IRHM597260
irf5n5210
irhna597160scs
irhf7110scs
IRHG57110
IRHNA57264SESCS
35CLQ045SCS
12CLQ150SCS
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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DO-203AA
HFA40HF120
HFA40HF60
O-254AA
HFA35HB120
HFA35HB120C
HFA35HB60
HFA35HB60C
O-258AA
HFA45HC120C
10RIA10
HFA40HF120
irfm9034
10RIA100
10RIA120
10RIA20
10RIA40
10RIA60
JANSR2N7261
70HF
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IRHNA57064SCS
Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5
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94046B
IRHNJ597230
IRHNJ593230
O-254AA
22JGQ045SCV
22GQ100SCV
25GQ045SCS
IRHNA57064SCS
IRHNJ597230SCS
IRHNJ9130SCS
IRHG6110SCS
IRHY7434
IRHE57130SCS
8CLJQ045SCV
IRHNJ57034SCS
irfy9230
35CLQ045SCS
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2n7391
Abstract: 2N7392 2N7444 2N7434
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 November 2006. MIL-PRF-19500/661C 7 August 2006 SUPERSEDING MIL-PRF-19500/661B 7 December 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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MIL-PRF-19500/661C
MIL-PRF-19500/661B
2N7444,
2N7434,
2N7391,
2N7392,
MIL-PRF-19500.
2n7391
2N7392
2N7444
2N7434
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1224B international I@R Rectifier dv/dt R A T E D HEXFET TRANSISTOR IRHM7360SE R E P E T IT IV E A V A L A N C H E A N D N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 400Volt, 0.20Q, (SEE) RAD HARD HEXFET
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1224B
IRHM7360SE
400Volt,
4A5S452
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AM 22A
Abstract: bn diode
Text: Provisional Data Sheet No. PD - 9.1224B International IO R Rectifier IRHM7360SE R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 400Volt, 0.20Q, (SEE) RAD HARD HEXFET
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1224B
IRHM7360SE
400Volt,
AM 22A
bn diode
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PD9823
Abstract: u3g diode h243 h249
Text: Data Sheet No. PD-9.823A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7360 IRHM8360 N-CHANNEL MEGA RAD HARD 400 Vblt, 0.22 Q, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs
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IRHM7360
IRHM8360
1X106
1x10s
H-249
IRHM7360,
IRHM8360
O-254
MIL-S-19500
H-250
PD9823
u3g diode
h243
h249
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PD9823
Abstract: No abstract text available
Text: Data Sheet No. PD-9.823A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7360 IRHM836Q ;n N-CHANNEL MEGA RAD HARD 400 Volt, 0.22 Q, MEGA RAD HARO HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs
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IRHM7360
IRHM836Q
1x106
1x105
1x106
IRHM7360D
IRHM7360U
O-254
MIL-S-19500
H-250
PD9823
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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MO-D36AB
Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for
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MIL-S-19500
T0-254AA
T0-204AA/AE
MO-D36AB
IRF9510 SEC
IRF510 SEC
2n6845 jantx
D 10.7 A
IRF540 smd
irf740 STAND FOR
irfm9230
2N7237 JANTXV
BC 542
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