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Infineon Technologies AG IRHYB63230CM Transistor MOSFET N-Channel 200V 16A 3-Pin TO-257AA - Bulk (Alt: IRHYB63230CM)
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Avnet Americas	IRHYB63230CM	Bulk			10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IRHYB63230CMSCS Transistor MOSFET N-Channel 200V 16A 3-Pin TO-257AA - Bulk (Alt: IRHYB63230CMSCS)
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Avnet Americas	IRHYB63230CMSCS	Bulk			50	1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRHYB63230CM Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRHYB63230CM		International Rectifier			Original	PDF

IRHYB63230CM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
95818 Abstract: No abstract text available Text: PD - 95818 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 0.13Ω 16A IRHYB64230CM 600K Rads (Si)	Original	PDF	O-257AA) IRHYB67230CM IRHYB63230CM IRHYB64230CM IRHYB68230CM 1000K 90MeV/ 5M-1994. O-257AA. 95818
Untitled Abstract: No abstract text available Text: PD-95818B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides	Original	PDF	PD-95818B O-257AA) IRHYB67230CM IRHYB63230CM 90MeV/ 5M-1994. O-257AA.
Untitled Abstract: No abstract text available Text: PD-95818D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYB67230CM Radiation Level 100K Rads (Si) IRHYB63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A International Rectifier’s R6 TM technology provides	Original	PDF	PD-95818D O-257AA) IRHYB67230CM IRHYB63230CM 90MeV/ 5M-1994. O-257AA.
IRHYB63230CM Abstract: IRHYB67230CM 8H6Y Text: PD-95818C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 16A 0.13Ω Low-Ohmic	Original	PDF	PD-95818C O-257AA) IRHYB67230CM IRHYB67230CM IRHYB63230CM O-257AA 90MeV/ 8H6Y
Untitled Abstract: No abstract text available Text: PD-95818D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYB67230CM Radiation Level 100K Rads (Si) IRHYB63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A Low-Ohmic	Original	PDF	PD-95818D O-257AA) IRHYB67230CM IRHYB63230CM 90MeV/ 5M-1994. O-257AA.
IRF460 Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,	Original	PDF	30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065