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    IRHYS63134CM Search Results

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    Infineon Technologies AG IRHYS63134CMSCS

    Transistor MOSFET N-Channel 150V 19A 3-Pin TO-257AA - Bulk (Alt: IRHYS63134CMSCS)
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    Infineon Technologies AG IRHYS63134CMSCS-01

    Transistor MOSFET N-Channel 150V 19A 3-Pin TO-257AA - Bulk (Alt: IRHYS63134CMSCS-01)
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    IRHYS63134CM Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRHYS63134CM International Rectifier Original PDF

    IRHYS63134CM Datasheets Context Search

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    2n7590

    Abstract: No abstract text available
    Text: PD-96930B 2N7590T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω


    Original
    PDF PD-96930B 2N7590T3 O-257AA) IRHYS67134CM IRHYS63134CM 90MeV/ 5M-1994. O-257AA. 2n7590

    2N7590

    Abstract: No abstract text available
    Text: PD-96930B 2N7590T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω


    Original
    PDF PD-96930B 2N7590T3 O-257AA) IRHYS67134CM IRHYS63134CM 90MeV/ 5M-1994. O-257AA. 2N7590

    Untitled

    Abstract: No abstract text available
    Text: PD-96930B 2N7590T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω


    Original
    PDF PD-96930B 2N7590T3 O-257AA) IRHYS67134CM IRHYS67134CM IRHYS63134CM 90MeV/ 5M-1994. O-257AA.

    2N7590T3

    Abstract: No abstract text available
    Text: PD-96930C 2N7590T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω


    Original
    PDF PD-96930C 2N7590T3 O-257AA) IRHYS67134CM IRHYS67134CM IRHYS63134CM O-257AA 90MeV/ 5M-1994. O-257AA. 2N7590T3

    Untitled

    Abstract: No abstract text available
    Text: PD-96930 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYS63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides


    Original
    PDF PD-96930 O-257AA) IRHYS67134CM IRHYS67134CM IRHYS63134CM 90MeV/ 5M-1994. O-257AA.

    IRHYS63134CM

    Abstract: IRHYS67134CM
    Text: PD-96930A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYS63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides


    Original
    PDF PD-96930A O-257AA) IRHYS67134CM IRHYS67134CM IRHYS63134CM 90MeV/ 5M-1994. O-257AA.

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original
    PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065