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    IS42S16320B Price and Stock

    Integrated Silicon Solution Inc IS42S16320B-7BL

    IC DRAM 512MBIT PAR 54WBGA
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    Bristol Electronics IS42S16320B-7BL 8
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    Quest Components IS42S16320B-7BL 11
    • 1 $19.04
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    Integrated Silicon Solution Inc IS42S16320B-6BL

    IC DRAM 512MBIT PARALLEL 54WBGA
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    Integrated Silicon Solution Inc IS42S16320B-6TL

    IC DRAM 512MBIT PAR 54TSOP II
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    Integrated Silicon Solution Inc IS42S16320B-7TL

    IC DRAM 512MBIT PAR 54TSOP II
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    Bristol Electronics IS42S16320B-7TL 148
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    Quest Components IS42S16320B-7TL 113
    • 1 $19.125
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    • 100 $14.875
    • 1000 $14.875
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    IS42S16320B-7TL 2
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    Integrated Silicon Solution Inc IS42S16320B-6TLI

    IC DRAM 512MBIT PAR 54TSOP II
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    Find more IS42S16320B price and stock on Findchips.com

    IS42S16320B Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IS42S16320B Integrated Silicon Solution DRAM Original PDF
    IS42S16320B-6BL Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512M 166MHZ 54BGA Original PDF
    IS42S16320B-6BLI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512M 166MHZ 54BGA Original PDF
    IS42S16320B-6BLI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512M 166MHZ 54BGA Original PDF
    IS42S16320B-6BL-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512M 166MHZ 54BGA Original PDF
    IS42S16320B-6TL Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512M 166MHZ 54TSOP Original PDF
    IS42S16320B-6TLI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512M 166MHZ 54TSOP Original PDF
    IS42S16320B-6TLI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512M 166MHZ 54TSOP Original PDF
    IS42S16320B-6TL-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512M 166MHZ 54TSOP Original PDF
    IS42S16320B-75ETL Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512M 133MHZ 54TSOP Original PDF
    IS42S16320B-75ETLI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512M 133MHZ 54TSOP Original PDF
    IS42S16320B-75ETLI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512M 133MHZ 54TSOP Original PDF
    IS42S16320B-75ETL-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512M 133MHZ 54TSOP Original PDF
    IS42S16320B-7BL Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512MBIT 143MHZ 54WBGA Original PDF
    IS42S16320B-7BLI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512M 143MHZ 54WBGA Original PDF
    IS42S16320B-7BLI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512M 143MHZ 54WBGA Original PDF
    IS42S16320B-7BL-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512M 143MHZ 54WBGA Original PDF
    IS42S16320B-7TL Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512MBIT 143MHZ 54TSOP Original PDF
    IS42S16320B-7TLI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512MBIT 143MHZ 54TSOP Original PDF
    IS42S16320B-7TLI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 512MBIT 143MHZ 54TSOP Original PDF

    IS42S16320B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    is42s16320

    Abstract: IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42/45S16320B is42s16320 IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 SEPTEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42S86400B 54-pin IS42/45S16320B IS42S86400B, PDF

    Untitled

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION MARCH 2008 FEATURES • Clock frequency: 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		IS42S86400B IS42S16320B 512Mb IS42S86400B 54-pin 54-ball PDF

    Untitled

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge DECEMBER 2011 OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B 11x13mm IS42S86400B, PDF

    IS42S86400B

    Abstract: IS42S16320B is42s86400
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 OCTOBER 2010 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge


    Original     		IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42/45S2/45S16320B IS42S86400B IS42S16320B is42s86400 PDF

    IS45S16320B-7TLA2

    Abstract: IS42S86400B IS42S16320B IS45S16320B
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 APRIL 2011 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge


    Original     		IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B Sel2/45S16320B 11x13mm IS45S16320B-7TLA2 IS42S86400B IS42S16320B IS45S16320B PDF

    is42s16320

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2010 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge


    Original     		IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42S86400B 54LTSOP-2 11x13mm IS42S86400B, IS42/45S16320B is42s16320 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION SEPTEMBER 2008 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		IS42S86400B IS42S16320B 512Mb IS42S86400B 54-pin 54-baches PDF

    is42s86400

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION APRIL 2008 FEATURES • Clock frequency: 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		IS42S86400B IS42S16320B 512Mb IS42S86400B 54-pin 54-ball IS42S86400B, 11x13mm is42s86400 PDF

    IS42S16320B

    Abstract: IS42S86400B
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 JUNE 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42/45S16320B IS42S16320B IS42S86400B PDF

    IS42S86400B

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2011 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge


    Original     		IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42S86400B IS42S86400B, IS42/45S16320B 11x13mm PDF

    IS42S16320B

    Abstract: is42S16320B-7TL IS42S16320B-7TLI IS42S16320B-75TL
    Text: IS42S16320B 32Meg x 16 512-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION JULY 2007 • Clock frequency: 143, 133 MHz OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a positive clock edge data transfer using pipeline architecture. All inputs and


    Original     		IS42S16320B 32Meg 512-MBIT 512Mb x16x4 54-pin IS42S16320B is42S16320B-7TL IS42S16320B-7TLI IS42S16320B-75TL PDF

    is42s16320b

    Abstract: IS42S16320B-6TLI is42s86400 IS42S16320B-6BL IS42S16320B-6TL IS42S86400B
    Text: IS42S86400B IS42S16320B 64M x 8, 32M x 16 MAY 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and


    Original     		IS42S86400B IS42S16320B 512Mb IS42S86400B 54-pin 54-ball iS86400B, IS42S86400B, is42s16320b IS42S16320B-6TLI is42s86400 IS42S16320B-6BL IS42S16320B-6TL PDF

    Samsung EOL

    Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
    Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM


    Original     		288-576Mb 10-20ns 18-72Mb 64Kb-16Mb 8Mb-64Mb 16Mb-512Mb 16Mb-1Gb 256Mb-2Gb 200Mhz -40oC Samsung EOL IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E PDF

    is62c51216al

    Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
    Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital


    Original     		PDF

    Automotive Product Selector Guide

    Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
    Text: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from


    Original     		PDF

    IS43LR32640

    Abstract: is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168
    Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive, (ii) communications, (iii) digital consumer, and (iv) industrial/medical/military. These key markets all require high quality and reliability, extended temperature ranges, and long-term support. Our primary products are high speed and


    Original     		i1-44-42218428 IS43LR32640 is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168 PDF

    IS23SC55160

    Abstract: is25c64B is61wv5128 is62c1024al TSOP2-44 IS61WV51216 is62c51216 tqfp-100 IS43DR16640A is45vs16160d
    Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are


    Original     		PDF