Untitled
Abstract: No abstract text available
Text: DSEE29-12CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 Vc trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 1200 600 Type ISOPLUS220TM DSEE29-12CC 1 2 3 G Symbol Conditions Maximum Ratings
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DSEE29-12CC
ISOPLUS220TM
DS98778
ISOPLUS220HV
728B1
065B1
123B1
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15N80Q
Abstract: IXFH15N80Q
Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings
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15N80Q
220TM
ISOPLUS220TM
IXFH15N80Q
728B1
123B1
728B1
065B1
15N80Q
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IXYS DSI 45
Abstract: No abstract text available
Text: DSI 30 Rectifier Diode ISOPLUS220TM VRRM = 800 - 1200 V IF AV M = 30 A Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220HVTM DSI 30-08AC DSI 30-12AC A C Preliminary Data Sheet G S Symbol IFRMS IFAV IFSM I2t Conditions Maximum Ratings
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ISOPLUS220TM
30-08AC
30-12AC
220HVTM
ISOPLUS220HV
DS98791
IXYS DSI 45
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Untitled
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous
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ISOPLUS220TM
25N80C
25VDS
728B1
065B1
123B1
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