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    IT 144 Price and Stock

    SparkFun Electronics KIT-14478

    INVENTOR KIT MAKEY MAKEY
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    DigiKey KIT-14478 Box 5 1
    • 1 $53.5
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    Master Electronics KIT-14478 10
    • 1 $51.49
    • 10 $48.96
    • 100 $46.79
    • 1000 $46.08
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    STMicroelectronics SPC563MKIT144S

    SPC563M EVAL BRD
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    DigiKey SPC563MKIT144S Box 3 1
    • 1 $812.5
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    Avnet Americas SPC563MKIT144S Box 1
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    STMicroelectronics SPC56ELKIT144S

    SPC56EL EVAL BRD
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    DigiKey SPC56ELKIT144S Box 2 1
    • 1 $1187.5
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    Avnet Americas SPC56ELKIT144S Box 1
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    STMicroelectronics SPC560PKIT144S

    SPC560P EVAL BRD
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    DigiKey SPC560PKIT144S Box 2 1
    • 1 $1187.5
    • 10 $1187.5
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    Avnet Americas SPC560PKIT144S Box 1
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    SparkFun Electronics KIT-14458

    MBED STARTER KIT
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    DigiKey KIT-14458 Bulk 1
    • 1 $168
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    IT 144 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tda 3650

    Abstract: C2907 40561 Commital TDA 335 TDA 15 570 tda 905 e2907hy2d
    Text: &RQWDWWL PDVFKLR D SLQ]DUH 0DOH FULPS FRQWDFWV Codice Commital Commital P/N IT - 40579 IT - 40553 IT - 40553 - 12 IT - 40553 - 13 IT - 40553 - 15 IT - 40553 - 20 IT - 40553 - 26 IT - 40557 IT - 40557 - 08 IT - 40557 - 12 IT - 40557 - 13 IT - 40557 - 15 IT - 40557 - 20


    Original     		PDF 8PIU68U tda 3650 C2907 40561 Commital TDA 335 TDA 15 570 tda 905 e2907hy2d

    MT29C4G48MAZAPAKQ-5

    Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,


    Original     		PDF 168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package

    MT29F4G08ABA

    Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96
    Text: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,


    Original     		PDF 168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29F4G08ABA MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96

    Untitled

    Abstract: No abstract text available
    Text: CS 45 Phase Control Thyristor VRRM = 800-1600 V IT RMS = 75 A IT(AV)M = 48 A VRSM VRRM TO-247 AD VDSM VDRM V V 900 1300 1700 800 1200 1600 Type A IT(RMS) IT(AV)M TVJ = TVJM TC = 75°C; 180° sine ITSM TVJ = 45°C; VR = 0 V TVJ = TVJM VR = 0 V it (di/dt)cr


    Original     		PDF O-247 247TM 45-08io1 45-12io1 45-16io1 45-16io1R

    X5470

    Abstract: intel nehalem L5520 X5560 E5520 E5530 Intel Xeon 5500 E5355 intel 2.53GHz E5472
    Text: Intel Xeon® Processor 5500 Series An Intelligent Approach to IT Challenges A Giant Leap for IT and Business Capabilities In many organizations, IT infrastructure has begun to constrain business efficiency and growth. For the past decade, IT has rapidly added low-cost hardware to accommodate business growth. But with data centers now stretched to capacity in


    Original     		PDF 0309/HLW/OCG/PP/2 321579-001US X5470 intel nehalem L5520 X5560 E5520 E5530 Intel Xeon 5500 E5355 intel 2.53GHz E5472

    VG26426

    Abstract: No abstract text available
    Text: VG264260CJ 262,144 x 16 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in


    Original     		PDF 40-pin VG264260CJ 144-word 25/28/30/35/40ns 1G5-0109 VG26426

    Untitled

    Abstract: No abstract text available
    Text: CS 30 Phase Control Thyristor VRRM = 1200-1600 V IT RMS = 49 A IT(AV)M = 31 A TO-247 AD VRRM VDRM V V 1200 1400 1600 1200 1400 1600 Type A C A G G CS 30-12io1 CS 30-14io1 CS 30-16io1 Symbol Test Conditions IT(RMS) IT(AV)M TVJ = TVJM Tcase = 85°C; 180° sine


    Original     		PDF O-247 30-12io1 30-14io1 30-16io1

    Untitled

    Abstract: No abstract text available
    Text: VIS VG264260CJ 262,144 x 16 - Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in


    Original     		PDF VG264260CJ 144-word 40-pin 25/28/30/35/40ns 1G5-0125

    Untitled

    Abstract: No abstract text available
    Text: VIS VG264260CJ 262,144 x 16 - Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in


    Original     		PDF VG264260CJ 144-word 40-pin 25/28/30/35/40ns 1G5-0125

    Untitled

    Abstract: No abstract text available
    Text: SA SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 180 Volts 500 Watt Peak Pulse Power REVERSE BREAKDOWN BREAKDOWN TEST STANDVOLTAGE VOLTAGE PART NUMBER CURRENT OFF VBR V VBR(V) IT (mA) VOLTAGE MIN.@IT MAX.@IT VRWM(V)


    Original     		PDF SA10A SA10CA SA11A SA11CA SA12A SA12CA SA13A SA13CA

    SA10

    Abstract: SA10A SA11 SA11A SA12 SA12A SA13 SA13A SA14 SA14A
    Text: CHENG- YI ELECTRONIC UNI-DIRECTIONAL 500 Watt Axial Lead TVS UNI-DIRECTIONAL PART NUMBER REVERSE STAND-OFF VOLTAGE VRWN V BREAKDOWN VOLTAGE VBR (V) MIN.@ IT BREAKDOWN VOLTAGE VBR (V) MAX.@ IT TEST CURRENT IT (mA) MAXIMUM CLAMPING VOLTAGE @Ipp Vc (V) PEAK


    Original     		PDF SA10A SA11A SA12A SA13A SA14A SA15A SA16A SA17A SA18A SA20A SA10 SA10A SA11 SA11A SA12 SA12A SA13 SA13A SA14 SA14A

    P6KE10

    Abstract: P6KE10A P6KE11 P6KE11A P6KE12 P6KE12A P6KE13 P6KE13A P6KE15 P6KE15A
    Text: CHENG- YI ELECTRONIC UNI-DIRECTIONAL 400 Watt Axial Lead TVS UNI-DIRECTIONAL PART NUMBER REVERSE STAND-OFF VOLTAGE VRWN V BREAKDOWN VOLTAGE VBR (V) MIN.@ IT BREAKDOWN VOLTAGE VBR (V) MAX.@ IT TEST CURRENT IT (mA) MAXIMUM CLAMPING VOLTAGE @Ipp Vc (V) PEAK


    Original     		PDF P6KE10 P6KE10A P6KE11 P6KE11A P6KE12 P6KE12A P6KE13 P6KE13A P6KE15 P6KE15A P6KE10 P6KE10A P6KE11 P6KE11A P6KE12 P6KE12A P6KE13 P6KE13A P6KE15 P6KE15A

    Untitled

    Abstract: No abstract text available
    Text: 3KP SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 220 Volts 3000 Watt Peak Pulse Power REVERSE BREAKDOWN BREAKDOWN STANDTEST VOLTAGE VOLTAGE PART NUMBER OFF CURRENT VBR V VBR(V) VOLTAGE IT (mA) MIN.@IT MAX.@IT UNI-POLAR


    Original     		PDF 3KP10A 3KP10CA 3KP11A 3KP11CA 3KP12A 3KP12CA 3KP13A 50mVp-p 40x40x1mm)

    P4KE10

    Abstract: P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 P4KE15A
    Text: CHENG- YI ELECTRONIC UNI-DIRECTIONAL 400 Watt Axial Lead TVS UNI-DIRECTIONAL PART NUMBER REVERSE STAND-OFF VOLTAGE VRWN V BREAKDOWN VOLTAGE VBR (V) MIN.@ IT BREAKDOWN VOLTAGE VBR (V) MAX.@ IT TEST CURRENT IT (mA) MAXIMUM CLAMPING VOLTAGE @Ipp Vc (V) PEAK


    Original     		PDF P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 P4KE15A P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 P4KE15A

    1.5KE440CA

    Abstract: 5KE12A 5KE15A 38000
    Text: CHENG- YI ELECTRONIC UNI-DIRECTIONAL 1500 Watt Axial Lead TVS UNI-DIRECTIONAL PART NUMBER JEDEC PART NUMBER REVERSE STAND-OFF VOLTAGE VTWN V BREAKDOWN VOLTAGE VBR (V) MIN.@ IT BREAKDOWN VOLTAGE VBR (V) MAX.@ IT TEST CURRENT IT (mA) MAXIMUM CLAMPING VOLTAGE


    Original     		PDF 5KE10 5KE10A 5KE11 5KE11A 5KE12 5KE12A 5KE13 5KE13A 5KE15 5KE15A 1.5KE440CA 5KE12A 5KE15A 38000

    3KP10A

    Abstract: 3KP10CA 3KP11A 3KP11CA 3KP12A 3KP12CA 3KP13A 3KP13CA 3KP14A 3KP14CA
    Text: 3KP SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 220 Volts 3000 Watt Peak Pulse Power REVERSE BREAKDOWN BREAKDOWN STANDTEST VOLTAGE VOLTAGE PART NUMBER OFF CURRENT VBR V VBR(V) VOLTAGE IT (mA) MIN.@IT MAX.@IT UNI-POLAR


    Original     		PDF 3KP10A 3KP10CA 3KP11A 3KP11CA 3KP12A 3KP12CA 3KP13A 50mVp-p 40x40x1mm) 3KP10A 3KP10CA 3KP11A 3KP11CA 3KP12A 3KP12CA 3KP13A 3KP13CA 3KP14A 3KP14CA

    G5012

    Abstract: VG264260CJ-4 ICC1
    Text: VIS ? VG264260CJ 262,144x16-B it CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in


    OCR Scan     		PDF VG264260CJ 144x16-B 144-word 40-pin 25/28/30/35/40ns addG264260CJ-4 VG264269Gd-3 G5012 VG264260CJ-4 ICC1

    Untitled

    Abstract: No abstract text available
    Text: VIS VG264260CJ 2 62,144x16-B it CMOS Dynamic RAM Preliminary D escription T he device is C M O S D ynam ic RAM organized as 262, 144-w ord x 16 bits. It is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and advanced C M O S circu it design technologies. It is packaged in


    OCR Scan     		PDF VG264260CJ 144x16-B 144-w 40-pin /28/30/35/40ns 40-Pin 264269G 400mii, 1G5-0125

    Untitled

    Abstract: No abstract text available
    Text: DS2223/DS2224 DALLAS SEMICONDUCTOR FEATURES DS2223/DS2224 EconoRAM PACKAGE OUTLINE • L ow -cost, general-purpose, 2 5 6 -b it m em ory - DS2223 has 2 5 6 -b it SRAM - DS2224 has 3 2 -b it ROM, 2 2 4 -b it SRAM TO -92 • Reduces control, address and data interface to a


    OCR Scan     		PDF DS2223/DS2224 DS2223 DS2224

    fr9z

    Abstract: VG264260
    Text: VG264260CJ 262.144x16—Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in


    OCR Scan     		PDF VG264260CJ 144x16-- 144-word 40-pin 25/28/30/35/40ns 0s035 fr9z VG264260

    Untitled

    Abstract: No abstract text available
    Text: DS2223/DS2224 DALLAS SEMICONDUCTOR FEATURES DS2223/DS2224 EconoRAM PACKAGE OUTLINE • L ow -cost, general-purpose, 2 5 6 -b it m em ory - DS2223 has 2 5 6 -b it SRAM - DS2224 has 3 2 -b it ROM, 2 2 4 -b it SRAM TO -92 • Reduces control, address and data interface to a


    OCR Scan     		PDF DS2223/DS2224 DS2223 DS2224 OT-223 DS1233 DS1233A DS1233D

    DS2223

    Abstract: DS2223T DS2223Y DS2223Z DS2224 DS2224T DS2224Y DS2224Z DS22A
    Text: DS2223/DS2224 DALLAS SEMICONDUCTOR FEATURES DS2223/DS2224 EconoRAM PACKAGE OUTLINE • L ow -cost, general-purpose, 2 5 6 -b it m em ory - DS2223 has 2 5 6 -b it SRAM - DS2224 has 3 2 -b it ROM, 2 2 4 -b it SRAM TO -92 • Reduces control, address and data interface to a


    OCR Scan     		PDF DS2223/DS2224 256-bit DS2223 DS2224 32-bit 224-bit DS2223T DS2223Y DS2223Z DS2224T DS2224Y DS2224Z DS22A

    it 101

    Abstract: IT 144 IT101
    Text: Type Turns R. Ue« V Up kV Vo • t V us t, Lp MS mH I—Sir UH Rp n Rs n ck Case Connec-Weight tions ca. g PF Ignition current 10 mA - 25 mA Rise tim et, at R L = 400 a IT 145 1:1 1:1:1 IT 143 IT 144 . 3:1:1 500 500 500 4 4 4 800 800 800 0,6 0,6 0,6 15 15


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M27C256AK-I 2 6 2 144 -B IT 3 27 68 -W O R D BY 8-B IT CMOS ER A SA B LE AND E LE C T R IC A LLY REPROGRAM MABLE ROM DESCRIPTION The M itsubishi M 5 M 2 7 C 2 5 6 A K -I is a high-speed 2 6 2 1 4 4 -b it ultraviolet erasable and electrically reprogram m able read


    OCR Scan     		PDF M5M27C256AK-I M5M27C256AK-I