VG26426
Abstract: No abstract text available
Text: VG264260CJ 262,144 x 16 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in
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40-pin
VG264260CJ
144-word
25/28/30/35/40ns
1G5-0109
VG26426
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VG264265
Abstract: VG264260B
Text: VG264260BJ 262,144x16-Bit CMOS Dynamic RAM VIS TRUTH TABLE 2-CKE Notes: 1-4 CKEn-1 CKE n CURRENT STATE COMANDn ACTIONn L L Power-Down X Maintain Power-Down Self Refresh X Maintain Self Refresh Power-Down COMMAND INHIBIT or NOP Exit Power-Down 5 Self Refresh
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VG264260BJ
144x16-Bit
edg16
1G5-0157
VG264265
VG264260B
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VG264265BJ
Abstract: VG264265 VG264265BJ-4 vg264265bj-35 1G5-0017 VG3617801AT VG3617801AT-10 vg264265b
Text: VG264265BJ 262,144x16-Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262,144 - words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technology. It is packaged in JEDEC standard 40 - pin plastic SOJ package.
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PDF
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VG264265BJ
144x16-Bit
35/40/45/50ns
1G5-0017
VG264265
VG264265BJ-4
vg264265bj-35
1G5-0017
VG3617801AT
VG3617801AT-10
vg264265b
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VG264265CJ
Abstract: No abstract text available
Text: VIS VG264265CJ 262,144 x 16 - Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design
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VG264265CJ
25/30/35/40ns
40-PIN
1G5-0104
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Untitled
Abstract: No abstract text available
Text: VIS VG264260CJ 262,144 x 16 - Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in
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Original
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PDF
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VG264260CJ
144-word
40-pin
25/28/30/35/40ns
1G5-0125
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Untitled
Abstract: No abstract text available
Text: VIS VG264260CJ 262,144 x 16 - Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in
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Original
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PDF
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VG264260CJ
144-word
40-pin
25/28/30/35/40ns
1G5-0125
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VG264265BJ
Abstract: VG264260BJ-35 vg264265bj-35 VG264265 VG264260B VG26V4265BJ vg264265b
Text: VG26V4265BJ 262, 144 x 16 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design
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Original
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PDF
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40-pin
VG26V4265BJ
50/60/70ns
1G5-0090
VG264260BJ-35
VG264260BJ-4
VG264260BJ-45
VG264260BJ-5
300mil
VG264265BJ
vg264265bj-35
VG264265
VG264260B
vg264265b
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VG264265
Abstract: 4265CJ
Text: VG26 V 4265CJ 262,144 x 16 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design
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4265CJ
40-pin
25/28/30/35/40ns
40/50/60ns
1G5-0118
VG264265
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VG264265BJ
Abstract: VG264265BJ-4 VG26V4265CJ
Text: Preiminary VIS VG26V4265CJ 262,144x16-Bit CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit designtechnologies it is packaged in JEDEC standard 40 - pin plastic SOJ package.
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VG26V4265CJ
144x16-Bit
40/50/60ns
40-PIN
1G5-0113
VG264265BJ-4
VG264265BJ-5
VG264265BJ-6
VG26V4265BJ-5
VG264265BJ
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VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
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256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
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fr9z
Abstract: VG264260
Text: VG264260CJ 262.144x16—Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in
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VG264260CJ
144x16--
144-word
40-pin
25/28/30/35/40ns
0s035
fr9z
VG264260
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G5012
Abstract: VG264260CJ-4 ICC1
Text: VIS ? VG264260CJ 262,144x16-B it CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in
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OCR Scan
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PDF
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VG264260CJ
144x16-B
144-word
40-pin
25/28/30/35/40ns
addG264260CJ-4
VG264269Gd-3
G5012
VG264260CJ-4
ICC1
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VG264265
Abstract: VG46VS8325AQ VM43217405CJSA VP4-64 VS46417801BTGC VG46VS8325BO VG264 VM83217400CJSA vs46417801bt VG46VS8325
Text: Product Selection Guide 1.2. Product Selection Guide DRAM DRAM Part Number 4 M h D ii V.M Description Conf./Vol. Access Time ns VG264260CJ VG26V4265CJ VG264265CJ 1 256K xl6 256Kxl6 256K xl6 5V 3,3V 5V 25/28/30/35 40/50/60 25/28/30/35 VG26(S)17400CJ VG26(S)17405CJ
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VG264260CJ
VG26V4265CJ
VG264265CJ
256Kxl6
17400CJ
17405CJ
VG26V
17400DJ
17405DJ
VG264265
VG46VS8325AQ
VM43217405CJSA
VP4-64
VS46417801BTGC
VG46VS8325BO
VG264
VM83217400CJSA
vs46417801bt
VG46VS8325
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Untitled
Abstract: No abstract text available
Text: VIS VG264260CJ 2 62,144x16-B it CMOS Dynamic RAM Preliminary D escription T he device is C M O S D ynam ic RAM organized as 262, 144-w ord x 16 bits. It is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and advanced C M O S circu it design technologies. It is packaged in
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VG264260CJ
144x16-B
144-w
40-pin
/28/30/35/40ns
40-Pin
264269G
400mii,
1G5-0125
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V 4265CJ 2 6 2 ,1 4 4 x 1 6 -B it CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design
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OCR Scan
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PDF
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4265CJ
40-pin
25/28/30/35/40ns
40/50/60ns
refV4265CJ
4265CJ
400mil,
G5-0118
age28
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VG264265
Abstract: ut501 144XL
Text: VG26 V 4265CJ 262,144x16-B it CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design
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OCR Scan
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PDF
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4265CJ
144x16-B
40-pin
25/28/30/35/40ns
40/50/60ns
1G5-0118
VG264265
ut501
144XL
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VG264265
Abstract: VG264265BJ VG264265B 264265BJ VG26426
Text: V G 264265BJ 262,144 x 16-Bit CMOS Dynamic RAM Description T h e device is C M O S Dynam ic RA M organized as 2 6 2 ,1 4 4 words X 16 bits with extended data out access m ode. It is fabricated with an advanced submicron C M O S technology and advanced C M O S circuit design technologies. It is packaged in JE D E C standard 40-pin
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OCR Scan
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264265BJ
16-Bit
40-pin
35/40/45/50ns
1G5-0017
VG264265
VG264265BJ
VG264265B
VG26426
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