VG264265BJ
Abstract: VG264260BJ-35 vg264265bj-35 VG264265 VG264260B VG26V4265BJ vg264265b
Text: VG26V4265BJ 262, 144 x 16 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design
|
Original
|
PDF
|
40-pin
VG26V4265BJ
50/60/70ns
1G5-0090
VG264260BJ-35
VG264260BJ-4
VG264260BJ-45
VG264260BJ-5
300mil
VG264265BJ
vg264265bj-35
VG264265
VG264260B
vg264265b
|
VG264265BJ
Abstract: VG264265BJ-4 VG26V4265CJ
Text: Preiminary VIS VG26V4265CJ 262,144x16-Bit CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit designtechnologies it is packaged in JEDEC standard 40 - pin plastic SOJ package.
|
Original
|
PDF
|
VG26V4265CJ
144x16-Bit
40/50/60ns
40-PIN
1G5-0113
VG264265BJ-4
VG264265BJ-5
VG264265BJ-6
VG26V4265BJ-5
VG264265BJ
|
CAC10
Abstract: No abstract text available
Text: VG26V4265BJ 262,144 x 16-Bit CMOS Dynamic RAM Preliminary VISJffi Description The device is CMOS Dynam ic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced C M OS circuit design technologies, it is packaged in JEDEC standard 40-pin plastic
|
OCR Scan
|
PDF
|
VG26V4265BJ
16-Bit
40-pin
50/60/70ns
CAC10
|