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    Untitled

    Abstract: No abstract text available
    Text: MCH6612 Ordering number : EN7078A N-Channel Silicon MOSFET MCH6612 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


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    PDF MCH6612 EN7078A

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN6535 N-Channel Silicon MOSFET 5HN02SP Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2180 [5HN02SP] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 3 1.3


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    PDF ENN6535 5HN02SP 5HN02SP]

    TA-2939

    Abstract: 5HN02N
    Text: 注文コード No. N 6 5 3 4 5HN02N No. N 6 5 3 4 71000 新 5HN02N 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


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    PDF 5HN02N 100mA 100mA, IT00254 IT00258 IT00259 200mA IT00260 TA-2939 5HN02N

    MOSFET marking YF

    Abstract: D1099 5HN02M
    Text: 5HN02M Ordering number : EN6129A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5HN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF 5HN02M EN6129A MOSFET marking YF D1099 5HN02M

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN6129 N-Channel Silicon MOSFET 5HN02M Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2158 0.3 0.2 0.425 [5HN02M] 0.15 3 0.425 2.1 1.250 0 to 0.1


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    PDF ENN6129 5HN02M 5HN02M]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN6534 N-Channel Silicon MOSFET 5HN02N Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2178 [5HN02N] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45


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    PDF ENN6534 5HN02N 5HN02N]

    TA-2701

    Abstract: No abstract text available
    Text: Ordering number:ENN6363 N-Channel Silicon MOSFET 5HN02C Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2091A [5HN02C] 0.5 0.4 3 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Gate


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    PDF ENN6363 5HN02C 5HN02C] TA-2701

    MCH6612

    Abstract: No abstract text available
    Text: Ordering number : ENN7078 MCH6612 N-Channel Silicon MOSFET MCH6612 Ultrahigh-Speed Switching Applications Preliminary • 0.25 2.1 • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 4V drive. Composite type with 2 MOSFETs contained in a single


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    PDF ENN7078 MCH6612 MCH6612] MCH6612

    Untitled

    Abstract: No abstract text available
    Text: 5HN02M Ordering number : EN6129A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5HN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF EN6129A 5HN02M

    TA-2701

    Abstract: 5HN02C
    Text: 5HN02C Ordering number : EN6363A SANYO Semiconductors DATA SHEET 5HN02C N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF 5HN02C EN6363A TA-2701 5HN02C

    MCH6612

    Abstract: No abstract text available
    Text: MCH6612 注文コード No. N 7 0 7 8 B 三洋半導体データシート 半導体データシート No.N7078A をさしかえてください。 MCH6612 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


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    PDF MCH6612 N7078A 900mm2 100mA 100mA, IT00258 IT00260 900mm2 MCH6612

    EN6129A

    Abstract: No abstract text available
    Text: 5HN02M Ordering number : EN6129A N-Channel Silicon MOSFET 5HN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    PDF 5HN02M EN6129A EN6129A

    MCH6612

    Abstract: No abstract text available
    Text: MCH6612 Ordering number : EN7078B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6612 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


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    PDF MCH6612 EN7078B PW10s, MCH6612

    5HN02M

    Abstract: No abstract text available
    Text: 注文コード No. N 6 1 2 9 5HN02M No. 6 1 2 9 62299 新 5HN02M 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


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    PDF 5HN02M 100mA 100mA, IT00258 IT00259 200mA IT00260 IT00261 5HN02M

    Untitled

    Abstract: No abstract text available
    Text: 5HN02C Ordering number : EN6363A 5HN02C N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    PDF 5HN02C EN6363A