MCH6606
Abstract: No abstract text available
Text: Ordering number:ENN6461 N-Channel Silicon MOSFET MCH6606 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2173 [MCH6606] 0.3 5 2 3 0.65 0.25 1 0.15 4 1.6 6 2.1 • Low ON resistance. · Ultrahigh-speed swithcing. · 4V drive. · Composite type with 2 MOSFETs contained in one
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ENN6461
MCH6606
MCH6606]
MCH6606
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Abstract: No abstract text available
Text: MCH6606 Ordering number : EN6461A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6606 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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EN6461A
MCH6606
900mm2
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MCH6606
Abstract: IT00049
Text: MCH6606 注文コード No. N 6 4 6 1 B 三洋半導体データシート 半導体データシート No.N6461A をさしかえてください。 MCH6606 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス
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MCH6606
N6461A
900mm2
IT00052
900mm2
IT01731
IT01732
MCH6606
IT00049
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Untitled
Abstract: No abstract text available
Text: MCH6606 Ordering number : EN6461A N-Channel Silicon MOSFET MCH6606 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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MCH6606
EN6461A
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MCH6606
Abstract: No abstract text available
Text: MCH6606 Ordering number : EN6461B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6606 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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MCH6606
EN6461B
MCH6606
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