CPH6621
Abstract: No abstract text available
Text: CPH6621 Ordering number : ENA0847 SANYO Semiconductors DATA SHEET CPH6621 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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CPH6621
ENA0847
900mm20
A0847-4/4
CPH6621
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CPH6601
Abstract: ENN7155 TA-3620
Text: Ordering number : ENN7155 CPH6601 P-Channel Silicon MOSFET CPH6601 Ultrahigh-Speed Switching Applications Preliminary Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2202 [CPH6601] 0.15 2.9 5 4 0.6 6
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ENN7155
CPH6601
CPH6601]
CPH6601
ENN7155
TA-3620
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CPH3313
Abstract: No abstract text available
Text: Ordering number : ENN6925 CPH3313 P-Channel Silicon MOSFET CPH3313 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2152A [CPH3313] 2.9 0.15 0.4 0.6 3 0.2 • 2 1
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ENN6925
CPH3313
CPH3313]
CPH3313
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2SJ612
Abstract: No abstract text available
Text: 2SJ612 Ordering number : EN7178B P-Channel Silicon MOSFET 2SJ612 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage
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2SJ612
EN7178B
PW10s,
250mm20
2SJ612
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CPH6621
Abstract: No abstract text available
Text: CPH6621 Ordering number : ENA0847 SANYO Semiconductors DATA SHEET CPH6621 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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CPH6621
ENA0847
900mm20
A0847-4/4
CPH6621
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8114
Abstract: CP3313
Text: CP3313 Ordering number : ENN8114 P-Channel Silicon MOSFET CP3313 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings
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CP3313
ENN8114
900mm2
8114
CP3313
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rl76
Abstract: ENN7178A 2SJ612
Text: Ordering number : ENN7178A 2SJ612 P-Channel Silicon MOSFET 2SJ612 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2062A [2SJ612] 4.5 1.6 0.4 1.0
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ENN7178A
2SJ612
2SJ612]
25max
rl76
ENN7178A
2SJ612
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RL76
Abstract: No abstract text available
Text: Ordering number : ENN7178 2SJ612 P-Channel Silicon MOSFET 2SJ612 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2062A [2SJ612] 4.5 1.6 0.4 1.0 2.5
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ENN7178
2SJ612
2SJ612]
25max
RL76
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CPH6605
Abstract: No abstract text available
Text: 注文コード No. N 7 1 8 3 CPH6605 三洋半導体データシート N CPH6605 特長 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ ロードスイッチング用 ・低オン抵抗超高速スイッチングの P チャネルおよび P チャネル MOS ドライブ用の小信号 N チャネル
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CPH6605
900mm2
900mm2
IT00235
IT04068
IT04069
CPH6605
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CPH6605
Abstract: CPH6605 marking
Text: Ordering number : ENN7183 CPH6605 N-Channel and P-Channel Silicon MOSFETs CPH6605 Load Switching Applications • [CPH6605] 5 6 0.2 0.15 2.9 4 0.05 0.6 • Dual chip device for high-density mounting. unit : mm One of the encapsulated devices is a P-channel MOSFET 2202
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ENN7183
CPH6605
CPH6605]
CPH6605
CPH6605 marking
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TA-3062
Abstract: A 69254 CPH3313 ta 306-2 ta306 v235s TA-306
Text: 注文コード No. N 6 9 2 5 CPH3313 No. N 6 9 2 5 20101 新 CPH3313 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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CPH3313
900mm2
--10V
IT02660
IT02658
900mm2
IT02664
IT02663
TA-3062
A 69254
CPH3313
ta 306-2
ta306
v235s
TA-306
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2SJ612-TD
Abstract: 2SJ612 TA-3522
Text: 2SJ612 注文コード No. N 7 1 7 8 B 三洋半導体データシート 半導体データシート No.N7178A をさしかえてください。 2SJ612 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長
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2SJ612
N7178A
250mm2
--10V
IT04255
250mm2
IT04260
2SJ612-TD
2SJ612
TA-3522
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