MCH6616
Abstract: TA-3262
Text: Ordering number : ENN7013 MCH6616 N-Channel Silicon MOSFET MCH6616 Ultrahigh-Speed Switching Applications • • • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
|
Original
|
PDF
|
ENN7013
MCH6616
MCH6616]
MCH6616
TA-3262
|
CPH5803
Abstract: TA-3101 6935-2 MCH3405 SBS004M
Text: CPH5803 注文コード No. N 6 9 3 5 B 三洋半導体データシート 半導体データシート No.N6935A をさしかえてください。 CPH5803 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード
|
Original
|
PDF
|
CPH5803
N6935A
MCH3405)
SBS004M)
900mm2
TC-00001887
62005PE
TA-3101
CPH5803
6935-2
MCH3405
SBS004M
|
MCH6626
Abstract: No abstract text available
Text: MCH6626 Ordering number : ENN7918 N-Channel and P-Channel Silicon MOSFETs MCH6626 General-Purpose Switching Device Applications unit : mm 2173A [MCH6626] 0.3 4 0.25 2.1 • The MCH6626 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling
|
Original
|
PDF
|
MCH6626
ENN7918
MCH6626]
MCH6626
|
Untitled
Abstract: No abstract text available
Text: MCH6626 MCH6626 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications unit : mm 2173A [MCH6626] 0.3 4 5 6 3 2 0.65 1 0.15 0.07 0.25 2.1 • The MCH6626 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling
|
Original
|
PDF
|
MCH6626
MCH6626]
MCH6626
ENN7918
MCH6626/D
|
71801
Abstract: N7013 MCH6616 7013-1 TA-3262
Text: 注文コード No. N 7 0 1 3 MCH6616 No. N7013 71801 新 MCH6616 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 ・MOS 形電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能で
|
Original
|
PDF
|
MCH6616
N7013
900mm2
IT02920
900mm2
IT03308
IT03309
71801
N7013
MCH6616
7013-1
TA-3262
|
MCH6626
Abstract: IT025
Text: 注文コード No. N 7 9 1 8 MCH6626 三洋半導体データシート N MCH6626 特長 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス ・低オン抵抗 , 超高速スイッチングの N チャネルおよび P チャネル MOS 形電界効果トランジスタを
|
Original
|
PDF
|
MCH6626
900mm2
900mm2
IT03307
--10V
IT03377
IT02521
MCH6626
IT025
|
CPH5803
Abstract: MCH3405 SBS004M EN693
Text: CPH5803 Ordering number : EN6935B SANYO Semiconductors DATA SHEET CPH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-Channel Sillicon MOSFET MCH3405 and a Schottky Barrier Diode (SBS004M)
|
Original
|
PDF
|
CPH5803
EN6935B
MCH3405)
SBS004M)
CPH5803
MCH3405
SBS004M
EN693
|
CPH5803
Abstract: TA-3101 MCH3405 SBS004M marking QD
Text: Ordering number : ENN6935 CPH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5803 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3405 and a Schottky Barrier Diode (SBS004M) 2171
|
Original
|
PDF
|
ENN6935
CPH5803
MCH3405)
SBS004M)
CPH5803]
CPH5803
TA-3101
MCH3405
SBS004M
marking QD
|
TA-3101
Abstract: No abstract text available
Text: CPH5803 Ordering number : ENN6935A CPH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-Channel Sillicon MOSFET MCH3405 and a Schottky Barrier Diode (SBS004M)
|
Original
|
PDF
|
ENN6935A
CPH5803
MCH3405)
SBS004M)
TA-3101
|