SCH1404
Abstract: No abstract text available
Text: SCH1404 注文コード No. N 8 1 0 3 三洋半導体データシート N SCH1404 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。
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SCH1404
900mm2
IT02946
900mm2
IT08156
IT08147
SCH1404
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13001 SD
Abstract: tr 13001 sw 13001 13001 data MCH3412
Text: Ordering number : ENN6901 MCH3412 N-Channel Silicon MOSFET MCH3412 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resinstance. Ultrahigh-speed switching. 4V drive. unit : mm 2167 [MCH3412] 0.25 • 0.3 0.15 2 0.65 0.25 1
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ENN6901
MCH3412
MCH3412]
13001 SD
tr 13001
sw 13001
13001 data
MCH3412
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VEC2612
Abstract: mosfet pch 3a 60v
Text: VEC2612 Ordering number : ENA0656 SANYO Semiconductors DATA SHEET VEC2612 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • • The best suited for inverter applications. The VEC2612 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
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VEC2612
ENA0656
VEC2612
A0656-6/6
mosfet pch 3a 60v
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SCH1404
Abstract: 81031 marking kd
Text: SCH1404 Ordering number : ENN8103 N-Channel Silicon MOSFET SCH1404 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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SCH1404
ENN8103
900mm2
SCH1404
81031
marking kd
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VEC2612
Abstract: No abstract text available
Text: VEC2612 注文コード No. N A 0 6 5 6 三洋半導体データシート N VEC2612 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・インバータ用途に最適。 ・低オン抵抗の N チャネルおよび P チャネル MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した
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VEC2612
900mm2
IT11983
IT02950
IT02949
900mm2
IT11984
VEC2612
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6901 MCH3412 MCH3412 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resinstance. Ultrahigh-speed switching. 4V drive. unit : mm 2167 [MCH3412] 0.25 • 0.3 0.15 2 0.65 0.25 1
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ENN6901
MCH3412
MCH3412]
MCH3412/D
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