a 70084
Abstract: MCH3308 TA-3226 70084
Text: 注文コード No. N 7 0 0 8 MCH3308 No. N7008 73001 新 MCH3308 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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MCH3308
N7008
900mm2
500mA
500mA,
300mA,
IT03317
IT03316
--10V
a 70084
MCH3308
TA-3226
70084
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ta3355
Abstract: No abstract text available
Text: Ordering number : ENN7122 CPH3318 P-Channel Silicon MOSFET CPH3318 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2152A [CPH3318] 2.9 0.15 0.6 0.4 0.2 • 3 2 1 0.6
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ENN7122
CPH3318
CPH3318]
ta3355
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PDF
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MCH6627
Abstract: No abstract text available
Text: MCH6627 Ordering number : ENN8000 MCH6627 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6627 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting.
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MCH6627
ENN8000
MCH6627
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PDF
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71562
Abstract: No abstract text available
Text: Ordering number : ENN7156 MCH6619 P-Channel Silicon MOSFET MCH6619 Ultrahigh-Speed Switching Applications • 0.25 2.1 • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting.
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ENN7156
MCH6619
MCH6619]
71562
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MCH6619
Abstract: IT03314
Text: 注文コード No. N 7 1 5 6 MCH6619 三洋半導体データシート N MCH6619 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。
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MCH6619
900mm2
500mA
500mA,
300mA,
IT03317
900mm2
IT04070
IT04071
MCH6619
IT03314
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PDF
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MCH6627
Abstract: D-0300
Text: MCH6627 注文コード No. N 8 0 0 0 三洋半導体データシート N MCH6627 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗 , 超高速スイッチングの N チャネルおよび P チャネル MOS 形電界効果トランジスタを 1 パッケージに
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MCH6627
900mm2
IT03317
900mm2
IT04070
IT04071
MCH6627
D-0300
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PDF
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81154
Abstract: ENN8115
Text: MC3302 Ordering number : ENN8115 P-Channel Silicon MOSFET MC3302 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings
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ENN8115
MC3302
900mm2
81154
ENN8115
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Untitled
Abstract: No abstract text available
Text: MCH6627 Ordering number : ENN8000 N-Channel and P-Channel Silicon MOSFETs MCH6627 General-Purpose Switching Device Applications Features • • • The MCH6627 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting.
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MCH6627
ENN8000
MCH6627
900mm2â
MCH6627/D
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a 70084
Abstract: 70084 MCH3308 TA-3226
Text: Ordering number : ENN7008 MCH3308 P-Channel Silicon MOSFET MCH3308 Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2167A [MCH3308] 0.3 0.25 • Package Dimensions 0.15 0.25 2 1 0.65
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ENN7008
MCH3308
MCH3308]
a 70084
70084
MCH3308
TA-3226
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