A0526
Abstract: 6HN04CH 6hn04 TC-00001292
Text: 6HN04CH Ordering number : ENA0526 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 6HN04CH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage
|
Original
|
PDF
|
6HN04CH
ENA0526
PW10s,
900mm20
A0526-4/4
A0526
6HN04CH
6hn04
TC-00001292
|
32608P
Abstract: A0528 6hn04
Text: 6HN04SS Ordering number : ENA0528 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 6HN04SS General-Purpose Switching Device Applications Features • • 4V drive. Halogen Free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
|
Original
|
PDF
|
6HN04SS
ENA0528
PW10s,
145mm80mm1
A0528-4/4
32608P
A0528
6hn04
|
MCH6656
Abstract: 8V100
Text: MCH6656 注文コード No. N A 0 5 3 0 三洋半導体データシート N MCH6656 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・4V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
|
Original
|
PDF
|
MCH6656
900mm2
100mA
100mA,
IT11271
200mA
900mm2
IT13430
MCH6656
8V100
|
32608P
Abstract: No abstract text available
Text: EC4408C Ordering number : ENA0529 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4408C General-Purpose Switching Device Applications Features • • 4V drive. Halogen Free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
EC4408C
ENA0529
PW10s,
145mm80mm1
A0529-4/4
32608P
|
6HN04S
Abstract: 32608P 6hn04 it134
Text: 6HN04S Ordering number : ENA0527 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 6HN04S General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage
|
Original
|
PDF
|
6HN04S
ENA0527
PW10s,
145mm80mm1
A0527-4/4
6HN04S
32608P
6hn04
it134
|
6HN04MH
Abstract: No abstract text available
Text: 6HN04MH Ordering number : ENA0365A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 6HN04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage
|
Original
|
PDF
|
6HN04MH
ENA0365A
PW10s,
900mm20
A0365-4/4
6HN04MH
|
6HN04MH
Abstract: marking FB
Text: 6HN04MH Ordering number : ENA0365 N-Channel Silicon MOSFET 6HN04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
|
Original
|
PDF
|
6HN04MH
ENA0365
900mm2
A0365-4/4
6HN04MH
marking FB
|
MOSFET A0531
Abstract: A0531
Text: SCH2411 Ordering number : ENA0531 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SCH2411 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
|
Original
|
PDF
|
SCH2411
ENA0531
PW10s,
900mm20
A0531-4/4
MOSFET A0531
A0531
|
MCH6656
Abstract: No abstract text available
Text: MCH6656 Ordering number : ENA0530 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6656 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
|
Original
|
PDF
|
MCH6656
ENA0530
PW10s,
900mm20
A0530-4/4
MCH6656
|
Untitled
Abstract: No abstract text available
Text: 6HN04MH Ordering number : ENA0365A N-Channel Silicon MOSFET 6HN04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current DC
|
Original
|
PDF
|
6HN04MH
ENA0365A
900mm2â
6HN04MH/D
|
MOSFET A0531
Abstract: SCH24 A0531
Text: SCH2411 注文コード No. N A 0 5 3 1 三洋半導体データシート N SCH2411 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・4V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
|
Original
|
PDF
|
SCH2411
900mm2
100mA
100mA,
200mA
900mm2
IT13432
A0531-3/4
MOSFET A0531
SCH24
A0531
|