3LP04MH
Abstract: No abstract text available
Text: 3LP04MH Ordering number : ENA0551 P-Channel Silicon MOSFET 3LP04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
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3LP04MH
ENA0551
900mm2
A0551-4/4
3LP04MH
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a1216 transistor
Abstract: a1216 marking xa
Text: MCH6649 Ordering number : ENA1216 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6649 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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MCH6649
ENA1216
PW10s,
900mm
A1216-4/4
a1216 transistor
a1216
marking xa
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a12124
Abstract: 3lp04ch
Text: 3LP04CH Ordering number : ENA1212 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage
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3LP04CH
ENA1212
PW10s,
900mm20
A1212-4/4
a12124
3lp04ch
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3lp04ss
Abstract: A12144
Text: 3LP04SS Ordering number : ENA1214 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP04SS General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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3LP04SS
ENA1214
PW10s,
145mm80mm1
A1214-4/4
3lp04ss
A12144
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A1216
Abstract: MOS12
Text: MCH6649 注文コード No. N A 1 2 1 6 三洋半導体データシート N MCH6649 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・1.5V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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MCH6649
900mm2
100mA
100mA,
--800mA
PW10s
--200mA
IT11706
900mm2
A1216
MOS12
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a1217
Abstract: No abstract text available
Text: SCH2308 Ordering number : ENA1217 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2308 General-Purpose Switching Device Applications Features • • • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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SCH2308
ENA1217
PW10s,
900mm
A1217-4/4
a1217
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transistor A1215
Abstract: a1215 transistors A1215 a1215 DIODE
Text: EC4309C Ordering number : ENA1215 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4309C General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C
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EC4309C
ENA1215
PW10s,
145mm80mm1
A1215-4/4
transistor A1215
a1215 transistors
A1215
a1215 DIODE
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3LP04S
Abstract: A12134
Text: 3LP04S Ordering number : ENA1213 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP04S General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage
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3LP04S
ENA1213
PW10s,
145mm80mm1
A1213-4/4
3LP04S
A12134
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A1217
Abstract: A12172 IT11698 IT11702
Text: SCH2308 注文コード No. N A 1 2 1 7 三洋半導体データシート N SCH2308 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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SCH2308
900mm2
100mA
100mA,
--800mA
--200mA
PW10s
IT11706
900mm2
A1217
A12172
IT11698
IT11702
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