ITH60C06
Abstract: No abstract text available
Text: ITH60C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR Advance Inform ation DS5048-1.1 O ctober 1998 T h e IT H 6 0 C 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range
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ITH60C06
DS5048-1
ITH60C06
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ITH60C06
Abstract: No abstract text available
Text: ITH60C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5048-1.2 December 1998 T h e IT H 6 0 C 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r
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ITH60C06
DS5048-1
ITH60C06
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