2SC1417
Abstract: d250m
Text: Ordering number:ENN2006A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1417/2SC3647 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide highdensity, small-sized hybrid ICs.
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ENN2006A
2SA1417/2SC3647
2SA1417/2SC3647]
25max
2SA1417
2SC1417
d250m
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2SA1417
Abstract: 2SC3647 ITR03542
Text: 2SA1417 / 2SC3647 注文コード No. N 2 0 0 6 C 三洋半導体データシート 半導体ニューズ No.N2006B とさしかえてください。 2SA1417 / 2SC3647 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高耐圧スイッチング用
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2SA1417
2SC3647
N2006B
2SA1417
250mm2
100mA
2SC3647
ITR03542
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2SA1417
Abstract: 2SC3647
Text: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.
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2SA1417
2SC3647
EN2006C
2SA1417
2SC3647
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2SC1417
Abstract: 2SC3647S-TD-E
Text: 2SA1417 / 2SC3647 Ordering number : EN2006D SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 Features PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of FBET, MBIT processes High breakdown voltage and large current capacity
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EN2006D
2SA1417
2SC3647
2SA1417/2SC3647
2SA1417
250mm2
2SC1417
2SC3647S-TD-E
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Untitled
Abstract: No abstract text available
Text: 2SA1417 / 2SC3647 Ordering number : EN2006D SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity
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2SA1417
2SC3647
EN2006D
2SA1417/2SC3647
2SA1417
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Untitled
Abstract: No abstract text available
Text: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.
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Original
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2SA1417
2SC3647
EN2006C
2SA1417
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Untitled
Abstract: No abstract text available
Text: 2SA1417 / 2SC3647 Ordering number : EN2006C PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.
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Original
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2SA1417
2SC3647
EN2006C
2SA1417
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs
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EN2006D
2SA1417/2SC3647
2SA1417
250mm2
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Untitled
Abstract: No abstract text available
Text: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.
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Original
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2SA1417
2SC3647
EN2006C
2SA1417
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