ITR04022 Search Results

Contextual Info: Ordering number : EN2511B 2SA1593/2SC4135 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Power supplies, relay derivers, lamp drivers Features • • • • High breakdown voltage and large current capacity

2SA1593

Abstract: 2SC4135 2sa 750 2044B D1099 ITR04011 ITR04012 IC 2 5/mip3e3my
Contextual Info: 注文コード No. N 2 5 1 1 A 2SA1593/2SC4135 No. N 2 5 1 1 A D1099 * 半導体ニューズ No.2511 とかしかえてください。 2SA1593 / 2SC4135 用途 ・電源 , リレードライブ , ランプドライブ。 特長 ・FBET, MBIT プロセス採用。

Contextual Info: 2SA1593/2SC4135 Ordering number : EN2511B SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications • Power supplies, relay derivers, lamp drivers Features • • • • High breakdown voltage and large current capacity

EN2511

Abstract: 2SC1593 2SC159 C4135 ITR04022 S1514
Contextual Info: 2SA1593/2SC4135 Ordering number : EN2511B SANYO Semiconductors DATA SHEET 2SA1593/2SC4135 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Applications • Power supplies, relay derivers, lamp drivers Features • • • • High breakdown voltage and large current capacity

2SC4135

Abstract: 2044B 2SA1593
Contextual Info: Ordering number:ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions • Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] 2.3 5.5 1.5

Contextual Info: Ordering number:ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions • Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] 2.3 5.5 1.5

C4135

Contextual Info: Ordering number:ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Package Dimensions unit:mm 2045B Features [2SA1593/2SC4135] • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity.