2SA1709
Abstract: No abstract text available
Text: Ordering number : EN3096A 2SA1709/2SC4489 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of FBET, MBIT processes Fast switching speed • High breakdown voltage, large current capacity ( )2SA1709
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EN3096A
2SA1709/2SC4489
2SA1709
2SA1709
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ICP30
Abstract: 2SA1709
Text: 2SA1709 / 2SC4489 Ordering number : EN3096A SANYO Semiconductors DATA SHEET 2SA1709/2SC4489 PNP/NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • Adoption of FBET, MBIT processes Fast switching speed • High breakdown voltage, large current capacity
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2SA1709
2SC4489
EN3096A
2SA1709/2SC4489
2SA1709
ICP30
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2SA1709
Abstract: 2SC4489 ITR04340 ITR04341 ITR04342
Text: Ordering number:ENN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage, large current capacity. · Fast switching speed.
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ENN3096
2SA1709/2SC4489
2SA1709/2SC4489]
2SA1709
2SA1709
2SC4489
ITR04340
ITR04341
ITR04342
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2SA1709
Abstract: 2SC4489 ITR04340 ITR04341 ITR04342 ITR04343 ITR04344
Text: 注文コード No. N 3 0 9 6 2SA1709/2SC4489 No. N 3 0 9 6 21500 2SA1709 / 2SC4489 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高電圧スイッチング用 ・FBET, MBIT プロセス採用。 ・高耐圧で電流容量が大きい。
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2SA1709/2SC4489
2SA1709
2SC4489
2SA1709
100mA
100mA
ITR04355
2SC4489
ITR04340
ITR04341
ITR04342
ITR04343
ITR04344
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2SA1709
Abstract: No abstract text available
Text: Ordering number:ENN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage, large current capacity. · Fast switching speed.
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PDF
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ENN3096
2SA1709/2SC4489
2SA1709/2SC4489]
2SA1709
2SA1709
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2SA1709
Abstract: No abstract text available
Text: Ordering number:ENN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage, large current capacity. · Fast switching speed.
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Original
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PDF
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ENN3096
2SA1709/2SC4489
2SA1709/2SC4489]
2SA1709
2SA1709
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