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    2sA1766

    Abstract: ITR04526 ITR04527 ITR04528 ITR04529 ITR04530 marking al
    Text: Ordering number:ENN3182B PNP Epitaxial Planar Silicon Transistor 2SA1766 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions unit:mm 2038A [2SA1766] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET, MBIT processes.


    Original     		ENN3182B 2SA1766 2SA1766] 25max 2sA1766 ITR04526 ITR04527 ITR04528 ITR04529 ITR04530 marking al PDF

    D209

    Abstract: 2SA1766 ITR04526 ITR04527 ITR04528 ITR04529 ITR04530 31824 D-209
    Text: 2SA1766 注文コード No. N 3 1 8 2 C 三洋半導体データシート 半導体ニューズ No.N3182B をさしかえてください。 2SA1766 PNP エピタキシャルプレーナ型シリコントランジスタ 高 hFE, 低周波一般増幅用 特長


    Original     		2SA1766 N3182B 250mm2 200mA 33110LA --500mA --300mA ITR04530 ITR04534 D209 2SA1766 ITR04526 ITR04527 ITR04528 ITR04529 ITR04530 31824 D-209 PDF

    2SA1766

    Abstract: ITR04527 marking al
    Text: 2SA1766 Ordering number : EN3182C SANYO Semiconductors DATA SHEET 2SA1766 PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Features • • • • • Adoption of FBET, MBIT processes. High DC current gain hFE=500 to 1200 .


    Original     		2SA1766 EN3182C 2SA1766 ITR04527 marking al PDF