ITR09989 Search Results
ITR09989 Datasheets Context Search
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Contextual Info: 2SD1620 Ordering number : EN1719C SANYO Semiconductors DATA SHEET 2SD1620 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications Features • • • • Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted. |
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2SD1620 EN1719C | |
Contextual Info: 2SD1620 Ordering number : EN1719D SANYO Semiconductors DATA SHEET 2SD1620 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications Features Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted Large current capacity and highly resistant to breakdown |
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EN1719D 2SD1620 | |
2SD1620
Abstract: ITR09987 ITR09988 ITR09989
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2SD1620 EN1719C 2SD1620 ITR09987 ITR09988 ITR09989 | |
2SD1620
Abstract: ITR09987 ITR09988 ITR09989 ITR09990 ITR09991
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ENN1719B 2SD1620 2SD1620] 25max 2SD1620 ITR09987 ITR09988 ITR09989 ITR09990 ITR09991 | |
Contextual Info: 2SD1620 Ordering number : EN1719C SANYO Semiconductors DATA SHEET 2SD1620 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications Features • • • • Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted. |
Original |
2SD1620 EN1719C | |
2sd1620Contextual Info: Ordering number : EN1719D 2SD1620 Bipolar Transistor 10V, 3A, Low VCE sat , NPN Single PCP http://onsemi.com Features Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted Large current capacity and highly resistant to breakdown |
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EN1719D 2SD1620 2sd1620 |