ITS35C12
Abstract: ITS35C12T T0264
Text: ITS35C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4754 - 2.1 The ITS35C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
|
OCR Scan
|
PDF
|
ITS35C12
DS4754
ITS35C12
ITS35C12T
T0264
|
Untitled
Abstract: No abstract text available
Text: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4754-2.1 ITS35C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS35C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
|
OCR Scan
|
PDF
|
DS4754-2
ITS35C12
ITS35C12
|
T0-264
Abstract: ITS35C12T
Text: ITS35C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4754 - 2.1 The ITS35C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r
|
OCR Scan
|
PDF
|
ITS35C12
DS4754
ITS35C12
T0-264
ITS35C12T
|