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    IVN5000

    Abstract: IVN5001 IVN500CI
    Text: IVN5000,1 AN Series [F^MIFS-IME FUT HELD EFFECT POWER TRANSISTOR This series of N-Channei Enhancement-mode Power MOSFETs utilizes G E’s advanced Power DM OS technology to achieve low on-resistance with excellent device ruggedness and reliability. .7 AMPERES


    OCR Scan     		PDF VN5000 amVN500CI IVN5001 IVN50CI0 IVN50CI1 IVN5000 IVN5001 IVN500CI

    IVN5000

    Abstract: IVN5001 IVN500CI
    Text: FSìMI^GffiS FUF IVN5000,1 TN Series RELD EFFECT POWER TRANSISTOR This series of N -C hannel E nhancem ent-m ode Power M O SFETs utilizes G E ’s advanced Pow er D M O S technology to achieve low on-resistance with excellent device ruggedness and reliability.


    OCR Scan     		PDF IVN5000 IVN500CI IVN50CI1 IVN5001