Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXBH 9N160G Search Results

    SF Impression Pixel

    IXBH 9N160G Price and Stock

    IXYS Corporation IXBH9N160G

    IGBT 1600V 9A 100W TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBH9N160G Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    Bristol Electronics IXBH9N160G 2
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Quest Components IXBH9N160G 1
    • 1 $50
    • 10 $50
    • 100 $50
    • 1000 $50
    • 10000 $50
    Buy Now
    TTI IXBH9N160G Tube 30
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Others IXBH9N160G

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange IXBH9N160G 6,513
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    IXYS Integrated Circuits Division IXBH9N160G

    IGBT DIS.DIODE SINGLE 5A 1600V BIMOSFET TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXBH9N160G
    • 1 $6.23535
    • 10 $6.23535
    • 100 $5.6685
    • 1000 $5.6685
    • 10000 $5.6685
    Get Quote
    Win Source Electronics IXBH9N160G 931
    • 1 -
    • 10 $6.478
    • 100 $4.319
    • 1000 $4.319
    • 10000 $4.319
    Buy Now

    Littelfuse Inc IXBH9N160G

    IGBT 1600V 9A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Wuhan P&S IXBH9N160G 5,010 1
    • 1 $19.18
    • 10 $19.18
    • 100 $12.24
    • 1000 $9.28
    • 10000 $9.28
    Buy Now

    IXBH 9N160G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBH 9N160G IXYS TRANS IGBT CHIP N-CH 1600V 9A 3TO-247 AD Original PDF
    IXBH9N160G IXYS 1600V high volatge BIMOSFET Original PDF

    IXBH 9N160G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9n160g

    Abstract: IXBH 9N160G D-68623 ixbh9n160g 9N140G
    Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 9N140G IXBH 9N160G N-Channel, Enhancement Mode MOSFET compatible C VCES IC25 VCE sat tfi = = = = 1400/1600 V 9A 4.9 V typ. 70 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Preliminary Data


    Original
    PDF 9N140G 9N160G O-247 9N140G 9-140/160G 9n160g IXBH 9N160G D-68623 ixbh9n160g

    Untitled

    Abstract: No abstract text available
    Text: IXBH 9N160G High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 9A VCES = 1600 V VCE sat = 4.9 V typ. tfi = 70 ns N-Channel, Enhancement Mode MOSFET compatible C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES


    Original
    PDF 9N160G O-247 9-140/160G

    IXBH 9N160G

    Abstract: IXBH9N160G 9N160G
    Text: IXBH 9N160G High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 9A VCES = 1600 V VCE sat = 4.9 V typ. tfi = 70 ns N-Channel, Enhancement Mode MOSFET compatible C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES


    Original
    PDF 9N160G O-247 9N160G 9-140/160G IXBH 9N160G IXBH9N160G

    IXAN0014

    Abstract: 0014 inverter circuit using MOSFET and micro controller mosfet 1500v difference between IGBT and MOSFET IN inverter IXBH9N160 ac to dc converter with chopper transformer mosfet 4b flyback converter 2A 15V gate drive pulse transformer Gate Drive Characteristics Requirements
    Text: Technical Application IXAN0014 Comparative Performance of BIMOSFETs in Fly-Back Converter Circuits One of the typical applications for a flyback converter is the auxiliary power supply for the IGBT gate driver in an inverter. The essential requirement for a switch of a flyback converter in a drives inverter is a high breakdown voltage combined with fast


    Original
    PDF IXAN0014 D-68623 IXAN0014 0014 inverter circuit using MOSFET and micro controller mosfet 1500v difference between IGBT and MOSFET IN inverter IXBH9N160 ac to dc converter with chopper transformer mosfet 4b flyback converter 2A 15V gate drive pulse transformer Gate Drive Characteristics Requirements

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    50N60

    Abstract: 50N100 50n80 40N160 9N160G 50N6
    Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C


    OCR Scan
    PDF 9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6