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    IXBK75N170 Search Results

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    IXBK75N170 Price and Stock

    IXYS Corporation IXBK75N170

    IGBT 1700V 200A TO264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBK75N170 Tube 1
    • 1 $44.65
    • 10 $44.65
    • 100 $35.0668
    • 1000 $35.0668
    • 10000 $35.0668
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    Mouser Electronics IXBK75N170 190
    • 1 $50.71
    • 10 $45.18
    • 100 $39.66
    • 1000 $39.66
    • 10000 $39.66
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    Future Electronics IXBK75N170 Tube 24 Weeks 25
    • 1 -
    • 10 -
    • 100 $55.91
    • 1000 $55.91
    • 10000 $55.91
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    TTI IXBK75N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $35.7
    • 10000 $35.7
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    TME IXBK75N170 21 1
    • 1 $68.05
    • 10 $58.65
    • 100 $54.74
    • 1000 $54.74
    • 10000 $54.74
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    New Advantage Corporation IXBK75N170 6 1
    • 1 -
    • 10 $103.28
    • 100 $103.28
    • 1000 $103.28
    • 10000 $103.28
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    IXYS Corporation IXBK75N170A

    IGBT 1700V 110A 1040W TO264
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    DigiKey IXBK75N170A Tube
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    Mouser Electronics IXBK75N170A
    • 1 -
    • 10 $42.01
    • 100 $37.89
    • 1000 $36.53
    • 10000 $36.53
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    Littelfuse Inc IXBK75N170

    Transistor, Igbt, 1.7Kv, 200A, To-264; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:2.6V; Power Dissipation:1.04Kw; Collector Emitter Voltage Max:1.7Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |Littelfuse IXBK75N170
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXBK75N170 Bulk 3 1
    • 1 $49.71
    • 10 $44.34
    • 100 $38.87
    • 1000 $38.87
    • 10000 $38.87
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    RS IXBK75N170 Bulk 8 Weeks 25
    • 1 -
    • 10 -
    • 100 $54.24
    • 1000 $54.24
    • 10000 $54.24
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    IXYS Integrated Circuits Division IXBK75N170

    IGBT DIS.DIODE SINGLE 75A 1700V TO-264 BIMOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXBK75N170 7
    • 1 $80.86183
    • 10 $80.86183
    • 100 $75.5718
    • 1000 $75.5718
    • 10000 $75.5718
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    IXBK75N170 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBK75N170 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 200A 1040W TO264 Original PDF
    IXBK75N170A IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 110A 1040W TO264 Original PDF

    IXBK75N170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC110 IXBK75N170 IXBX75N170 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXBK75N170 IXBX75N170 O-264 PLUS247TM 75N170

    IXBK75N170

    Abstract: IXBX75N170 IXBX 75N170 PLUS247
    Text: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBK75N170 IXBX75N170 IC110 O-264 75N170 IXBK75N170 IXBX75N170 IXBX 75N170 PLUS247

    ixbk75n170

    Abstract: PLUS247 IXBX75N170 IXBX 75N170
    Text: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBK75N170 IXBX75N170 IC110 O-264 75N170 ixbk75n170 PLUS247 IXBX75N170 IXBX 75N170

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC90 IXBK75N170A IXBX75N170A VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBK75N170A IXBX75N170A O-264 PLUS247TM Tstg60V 75N170A

    IXBK75N170A

    Abstract: IXBX75N170 PLUS247 IXBX75N170A G1040 100Z
    Text: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170A IXBX75N170A VCES IC90 VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBK75N170A IXBX75N170A O-264 PLUS247TM 75N170A IXBK75N170A IXBX75N170 PLUS247 IXBX75N170A G1040 100Z