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    IXBX75N170 Price and Stock

    IXYS Corporation IXBX75N170

    IGBT 1700V 200A PLUS247-3
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    DigiKey IXBX75N170 Tube 180 300
    • 1 -
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    • 1000 $34.805
    • 10000 $34.805
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    Mouser Electronics IXBX75N170 198
    • 1 $50.33
    • 10 $47.19
    • 100 $40.09
    • 1000 $39.35
    • 10000 $39.35
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    Future Electronics IXBX75N170 Tube 24 Weeks 30
    • 1 -
    • 10 -
    • 100 $55.49
    • 1000 $55.49
    • 10000 $55.49
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    TTI IXBX75N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $34.81
    • 10000 $34.81
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    TME IXBX75N170 1
    • 1 $77.61
    • 10 $61.62
    • 100 $57.51
    • 1000 $57.51
    • 10000 $57.51
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    New Advantage Corporation IXBX75N170 8 1
    • 1 -
    • 10 $105.09
    • 100 $105.09
    • 1000 $105.09
    • 10000 $105.09
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    IXYS Corporation IXBX75N170A

    IGBT 1700V 110A 1040W PLUS247
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    DigiKey IXBX75N170A Tube 300
    • 1 -
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    • 100 -
    • 1000 $40.3896
    • 10000 $40.3896
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    Mouser Electronics IXBX75N170A
    • 1 -
    • 10 -
    • 100 -
    • 1000 $40.39
    • 10000 $40.39
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    TTI IXBX75N170A Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $39.99
    • 10000 $39.99
    		Buy Now
    TME IXBX75N170A 8 1
    • 1 $68.84
    • 10 $57.74
    • 100 $55.74
    • 1000 $55.74
    • 10000 $55.74
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    New Advantage Corporation IXBX75N170A 24 1
    • 1 -
    • 10 $114.29
    • 100 $106.67
    • 1000 $106.67
    • 10000 $106.67
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    Littelfuse Inc IXBX75N170

    Disc Igbt Bimosfet-High Volt To-247Ad/ Tube |Littelfuse IXBX75N170
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    Newark IXBX75N170 Bulk 300
    • 1 -
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    • 100 $36.48
    • 1000 $36.48
    • 10000 $36.48
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    Littelfuse Inc IXBX75N170A

    Disc Igbt Bimosfet-High Volt To-247Ad/ Tube |Littelfuse IXBX75N170A
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    Newark IXBX75N170A Bulk 300
    • 1 -
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    • 100 $38.81
    • 1000 $38.81
    • 10000 $38.81
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    IXYS Integrated Circuits Division IXBX75N170A

    IGBT DIS.DIODE SINGLE 65A 1700V BIMOSFET PLUS247
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    Ozdisan Elektronik IXBX75N170A 30
    • 1 $86.25409
    • 10 $86.25409
    • 100 $80.6113
    • 1000 $80.6113
    • 10000 $80.6113
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    IXBX75N170 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBX75N170 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 200A 1040W PLUS247 Original PDF
    IXBX75N170A IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 110A 1040W PLUS247 Original PDF

    IXBX75N170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC110 IXBK75N170 IXBX75N170 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXBK75N170 IXBX75N170 O-264 PLUS247TM 75N170

    IXBK75N170

    Abstract: IXBX75N170 IXBX 75N170 PLUS247
    Text: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBK75N170 IXBX75N170 IC110 O-264 75N170 IXBK75N170 IXBX75N170 IXBX 75N170 PLUS247

    ixbk75n170

    Abstract: PLUS247 IXBX75N170 IXBX 75N170
    Text: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBK75N170 IXBX75N170 IC110 O-264 75N170 ixbk75n170 PLUS247 IXBX75N170 IXBX 75N170

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC90 IXBK75N170A IXBX75N170A VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBK75N170A IXBX75N170A O-264 PLUS247TM Tstg60V 75N170A

    IXBK75N170A

    Abstract: IXBX75N170 PLUS247 IXBX75N170A G1040 100Z
    Text: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170A IXBX75N170A VCES IC90 VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBK75N170A IXBX75N170A O-264 PLUS247TM 75N170A IXBK75N170A IXBX75N170 PLUS247 IXBX75N170A G1040 100Z