IXER 60N120 Search Results

IXER 60N120 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TW060N120C		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET, 1200 V, 36 A, 0.078 Ω@18 V, TO-247

IXER 60N120 Price and Stock

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IXYS Corporation IXER60N120 IGBT NPT 1200V 95A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXER60N120	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

IXER 60N120 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXER60N120		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 95A 375W ISOPLUS247		Original	PDF
IXER 60N120		IXYS	IGBT Chip, NPT 3 IGBT - low saturation voltage - positive temperature coefficient		Original	PDF
IXER60N120		IXYS	1200V NPT IGBT		Original	PDF

IXER 60N120 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
60N120 Abstract: induction heat resonant D-68623 V9560 60n12 Text: Advanced Technical Information IXER 60N120 IC25 NPT3 IGBT VCES VCE sat typ. in ISOPLUS 247TM = 95 A = 1200 V = 2.1 V ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES	Original	60N120 247TM E153432 induction heat resonant D-68623 V9560 60n12	PDF
60N120 Abstract: D-68623 IXER60N120 V9560 Text: IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings	Original	60N120 247TM E153432 IXER60N120 60N120 D-68623 IXER60N120 V9560	PDF
Untitled Abstract: No abstract text available Text: IXER 60N120 NPT3 IGBT IC25 = 95 A VCES = 1200 V VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C	Original	60N120 247TM E153432 IXER60N120	PDF
60N120 Abstract: IXER60N120 80E10 igbt for induction heating ic IXER 60N120 20600t Text: IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C	Original	60N120 247TM E153432 IXER60N120 60N120 IXER60N120 80E10 igbt for induction heating ic IXER 60N120 20600t	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
30N120D1 Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120	OCR Scan	O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1	PDF