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    IXFB44N100 Search Results

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    IXFB44N100 Price and Stock

    Littelfuse Inc IXFB44N100P

    MOSFET N-CH 1000V 44A PLUS264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFB44N100P Tube 300 1
    • 1 $31.82
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    RS IXFB44N100P Bulk 8 Weeks 25
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    • 100 $31.46
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    Littelfuse Inc IXFB44N100Q3

    MOSFET N-CH 1000V 44A PLUS264
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    DigiKey IXFB44N100Q3 Tube 300
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    Newark IXFB44N100Q3 Bulk 300
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    RS IXFB44N100Q3 Bulk 8 Weeks 25
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    • 100 $47.77
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    IXYS Corporation IXFB44N100P

    MOSFETs 44 Amps 1000V 0.22 Rds
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    Mouser Electronics IXFB44N100P 572
    • 1 $29.98
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    • 100 $20.34
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    Newark IXFB44N100P Bulk 478 1
    • 1 $29.64
    • 10 $23.98
    • 100 $22.38
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    TTI IXFB44N100P Tube 300
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    TME IXFB44N100P 282 1
    • 1 $33.96
    • 10 $30
    • 100 $26.98
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    IXYS Corporation IXFB44N100Q3

    MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/44A
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    Mouser Electronics IXFB44N100Q3 125
    • 1 $44.42
    • 10 $36.85
    • 100 $31.23
    • 1000 $30.88
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    TTI IXFB44N100Q3 Tube 300
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    • 1000 $31.51
    • 10000 $31.51
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    TME IXFB44N100Q3 1
    • 1 $41.56
    • 10 $34.79
    • 100 $33.54
    • 1000 $33.54
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    IXYS Integrated Circuits Division IXFB44N100Q3

    MOSFET DIS.44A 1000V N-CH PLUS264-3 HIPERFET THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXFB44N100Q3
    • 1 $56.55346
    • 10 $56.55346
    • 100 $52.8537
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    IXFB44N100 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFB44N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 44A PLUS264 Original PDF
    IXFB44N100Q3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 44A PLUS264 Original PDF

    IXFB44N100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFB44N100Q3 RDS on trr = = ≤ ≤ 1000V 44A Ω 220mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFB44N100Q3 300ns PLUS264TM 44N100Q3 PDF

    IXFB44N100P

    Abstract: IXFB44N100 44n10 44n100p DS99867A
    Text: PolarTM Power MOSFET HiPerFETTM IXFB44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous


    Original     		IXFB44N100P 300ns PLUS264TM 44N100P 4-01-08-D IXFB44N100P IXFB44N100 44n10 DS99867A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		IXFB44N100P 300ns PLUS264TM 44N100P 8-27-07-B PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB44N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 44A Ω 220mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFB44N100P 300ns PLUS264TM 44N100P 4-01-08-D PDF

    IXFB44N100Q3

    Abstract: IXFB44N100 44N100Q3
    Text: Advance Technical Information IXFB44N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 1000V 44A Ω 220mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFB44N100Q3 300ns PLUS264TM 44N100Q3 IXFB44N100Q3 IXFB44N100 PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF