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    IXFK80N60P3 Search Results

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    IXFK80N60P3 Price and Stock

    Littelfuse Inc IXFK80N60P3

    MOSFET N-CH 600V 80A TO264AA
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    DigiKey IXFK80N60P3 Tube 676 1
    • 1 $20.05
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    IXYS Corporation IXFK80N60P3

    MOSFETs 600V 80A 0.07Ohm PolarP3 Power MOSFET
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    Mouser Electronics IXFK80N60P3 286
    • 1 $19.66
    • 10 $17.37
    • 100 $14.25
    • 1000 $13.53
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    Future Electronics IXFK80N60P3 Tube 44 Weeks 300
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    • 100 $13.57
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    IXFK80N60P3 Tube 44 Weeks 25
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    • 100 $13.57
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    TTI IXFK80N60P3 Tube 300
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    • 1000 $13.11
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    TME IXFK80N60P3 43 1
    • 1 $19.16
    • 10 $15.46
    • 100 $13.67
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    New Advantage Corporation IXFK80N60P3 116 1
    • 1 -
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    • 100 $28.74
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    IXYS Integrated Circuits Division IXFK80N60P3

    MOSFET DIS.80A 600V N-CH TO264 POLAR3 THT
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    Ozdisan Elektronik IXFK80N60P3 116
    • 1 $21.46163
    • 10 $21.46163
    • 100 $20.0576
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    IXFK80N60P3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFK80N60P3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 80A TO264 Original PDF

    IXFK80N60P3 Datasheets Context Search

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    Siemens DIODE E 1240

    Abstract: IXFK80N60P3 IXFX80N60P3
    Text: Advance Technical Information IXFK80N60P3 IXFX80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 TO-264 IXFK Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 600 600 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V


    Original     		PDF IXFK80N60P3 IXFX80N60P3 O-264 250ns PLUS247 80N60P3 Siemens DIODE E 1240 IXFX80N60P3

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFK80N60P3 IXFX80N60P3 = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFK80N60P3 IXFX80N60P3 250ns O-264 80N60P3

    IXFK80N60P3

    Abstract: 80n60
    Text: IXFK80N60P3 IXFX80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 = = 600V 80A  77m 250ns RDS on   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M


    Original     		PDF IXFK80N60P3 IXFX80N60P3 250ns O-264 80N60P3 IXFK80N60P3 80n60